Two-dimensional simulation of pattern-dependent oxidation of silicon nanostructures on silicon-on-insulator substrates

Crystallization of Amorphous SiO2 Microtubes Catalyzed by Lithium

“…[22] The presence of a concave curvature as in macroporous Si results in a pronounced retardation of the oxide growth with respect to planar oxidation. [21,[23][24][25][26][27] Kao et al attributed this phenomenon to viscous stress in the oxide layers associated with nonuniform mechanical deformation. [24] Whereas in planar systems only stress components parallel to the Si/SiO 2 interface exist in the newly formed SiO 2 layer, stress normal to the Si/SiO 2 interface also occurs in concave systems.…”

Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the Oxidation of Si

“…Because the geometrical shape at the bottom of the pits hinders the volumetric expansion, it imposes additional stress to the region. The stress leads to an apparent increase in the energy barrier to oxidation locally and thus a slowing down of the oxidation rate near the tip of individual Si pits [20]- [23]. Fig.…”

Germanium-Rich SiGe Nanowires Formed Through Oxidation of Patterned SiGe FINs on Insulator

“…At a high oxidation temperature of 875°C, wires were found to be relaxed (Table I) oxide at a relatively lower temperature as compared with SiNWs. In the literature, 6,8,19 it was reported that SiNW formation was mainly due to stress limiting oxidation and oxide viscosity when oxidation was carried out at higher temperatures. In the present study, the role of stress limiting oxidation is not prominent in SiGe nanowire formation owing to the enrichment of Ge (35-94%) from all directions.…”

“…1,2 Si nanowires (SiNWs) are being synthesized and fabricated by various growth methods and top-down approaches. [3][4][5][6] However, the top-down approach for the fabrication of Si nanostructures is favorable, being a complementary metal-oxide-semiconductor (CMOS)-compatible technology. 7 Recently, SiNWs or SiGe nanowires (SGNWs) with circular, square, and triangular shapes have been fabricated by the top-down approach.…”