Two dimensional Si layer epitaxied on LaAlO<sub>3</sub>(111) substrate: RHEED and XPS investigations

Azzouz, Chiraz Ben; Akremi, A.; Derivaz, M.; Bischoff, J.L.; Zanouni, Mohamed; Dentel, D.

doi:10.1088/1742-6596/491/1/012003

Cited by 11 publications

(5 citation statements)

References 20 publications

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“…[ 171 ] The Si grows in nanoislands form on (100) face of LAO [ 172 ] and was examined by RHEED and XPS analysis. [ 173 ] In RHEED patterns presence of Kikuchi lines throughout growth shows that surface maintain its flat architecture. The integral lines persistence shows configuration of the Si 2D layer at 300 and 500 °C.…”

Section: Group Iva 2d Xenes Family Synthesis Methodsmentioning

confidence: 99%

Sensing Applications of Atomically Thin Group IV Carbon Siblings Xenes: Progress, Challenges, and Prospects

Khan

Tareen

Wang

et al. 2020

Adv Funct Materials

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The 2D graphene (G) nanosheets (NSs) discovery is amound the foremost revolutionary incidents in materials science history. This discovery has stimulated huge attention in the study of other novel 2D materials (2DMs). This trend might be called modern day "alchemy," where the basic aim is to convert most of periodic table elements into G like 2D structures. Monoelemental, atomically thin 2DMs, called "Xenes" ("X" = group (III-VI)A elements, "ene" suffix that indicates one atom thick 2D layer of atoms) which are a newly invented family among nanomaterials. The number of predicted and experimentally synthesized 2D Xene materials of group IVA, i.e., G's siblings, has gained attention in nanosize devices. Such materials involve buckle structures that have recently been experimentally fabricated. The 2D Xene materials analog to G offer exciting potential for novel sensing applications. The group IVA Xenes, in cooperation with their ligandfunctionalized derivatives, arrange in a honeycomb lattice analogous to G but through a changeable degree of buckling. Their electronic structure ranges from trivial insulators passing via semiconductors with tunable gaps, to semimetallic, depending on substrate, chemical functionalization, and strain. In this review, different potential synthesis methods for group IVA 2D Xenes are briefly presented. A brief overview of their properties obtained theoretically and experimentally is presented, and finally their potential sensing applications are discussed.

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Section: Group Iva 2d Xenes Family Synthesis Methodsmentioning

confidence: 99%

Sensing Applications of Atomically Thin Group IV Carbon Siblings Xenes: Progress, Challenges, and Prospects

Khan

Tareen

Wang

et al. 2020

Adv Funct Materials

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“…Here, ML denotes the ideal atomic density in a Si (111) plane, i.e. 7.8 × 10 14 atom cm -2 [54]. It is not common to express the deposition rate as atom/time in experiments.…”

Section: Defect Assessmentmentioning

confidence: 99%

Silicene growth mechanisms on Au(111) and Au(110) substrates

Barboza,

da Silva-Santos,

Aliaga

et al. 2024

Nanotechnology

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Despite the remarkable theoretical applications of silicene, its synthesis remains a complex task, with epitaxial growth being one of the main routes involving depositing evaporated Si atoms onto a suitable substrate. Additionally, the requirement for a substrate to maintain the silicene stability poses several difficulties in accurately determining the growth mechanisms and the resulting structures, leading to conflicting results in the literature. In this study, large-scale molecular dynamics simulations are performed to uncover the growth mechanisms and characteristics of epitaxially grown silicene sheets on Au(111) and Au(110) substrates, considering different temperatures and Si deposition rates. The growth process has been found to initiate with the nucleation of several independent islands homogeneously distributed on the substrate surface, which gradually merge to form a complete silicene sheet. The results consistently demonstrate the presence of a buckled silicene structure, although this characteristic is notably reduced when using an Au(111) substrate. Furthermore, the analysis also focuses on the quality and growth mode of the silicene sheets, considering the influence of temperature and deposition rate. The findings reveal a prevalence of the Frank-vander Merwe growth mode, along with diverse forms of defects throughout the sheets.

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“…102 A promising study on epitaxial growth of Si on LAO substrates is reported in Ref. 103, where a single layer of Si is deposited via MBE onto a LAO( 111)-(2ͱ3 Â 2ͱ3)R30 reconstructed surface. The growth experiments were performed at different substrate temperatures (i.e., 300 C and 500 C) and followed using the RHEED technique.…”

Section: Laalomentioning

confidence: 99%

Group-IV 2D materials beyond graphene on nonmetal substrates: Challenges, recent progress, and future perspectives

Galbiati

Motta

Crescenzi

et al. 2019

Applied Physics Reviews

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The family of two-dimensional materials has been expanding rapidly over the last few years. Within it, a special place is occupied by silicene, germanene, and stanene due to their inherent compatibility with the existing semiconductor technology (notably for the case of silicene and germanene). Although obtaining them is not trivial due to the lack of layered bulk counterparts from which they could be mechanically exfoliated, they have been recently synthesized on a number of metallic substrates. The remarkable interaction between metals and these puckered materials, however, strongly modifies their intrinsic electronic properties, and also jeopardizes their integration into functional devices. In this context, first experimental efforts are now being devoted to the synthesis of silicene, germanene, and stanene on nonmetal substrates. Here, we review these pioneering works, present the ongoing debate, analyze, and discuss the major technical challenges and finally suggest possible novel solutions worth exploring.

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Two dimensional Si layer epitaxied on LaAlO₃(111) substrate: RHEED and XPS investigations

Cited by 11 publications

References 20 publications

Sensing Applications of Atomically Thin Group IV Carbon Siblings Xenes: Progress, Challenges, and Prospects

Sensing Applications of Atomically Thin Group IV Carbon Siblings Xenes: Progress, Challenges, and Prospects

Silicene growth mechanisms on Au(111) and Au(110) substrates

Group-IV 2D materials beyond graphene on nonmetal substrates: Challenges, recent progress, and future perspectives

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Two dimensional Si layer epitaxied on LaAlO3(111) substrate: RHEED and XPS investigations

Cited by 11 publications

References 20 publications

Sensing Applications of Atomically Thin Group IV Carbon Siblings Xenes: Progress, Challenges, and Prospects

Sensing Applications of Atomically Thin Group IV Carbon Siblings Xenes: Progress, Challenges, and Prospects

Silicene growth mechanisms on Au(111) and Au(110) substrates

Group-IV 2D materials beyond graphene on nonmetal substrates: Challenges, recent progress, and future perspectives

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Two dimensional Si layer epitaxied on LaAlO₃(111) substrate: RHEED and XPS investigations