Journal of Elec Materi
 2019
DOI: 10.1007/s11664-019-07133-6
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Two-Dimensional Potential and Threshold Voltage Modeling of Work Function Engineered Double Gate High-k Gate Stack Schottky Barrier MOSFET

Priyanka Saha
1
,
Saheli Sarkhel2,
Subir Kumar Sarkar
3
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Cited by 5 publications
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Interface Trap Charge Induced Threshold Voltage Modeling of WFE High-K SOI MOSFET

Saha
1
,
Banerjee
2
,
Dash
3
et al. 2020
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Interface Trap Charge Induced Threshold Voltage Modeling of WFE High-K SOI MOSFET

Saha
1
,
Banerjee
2
,
Dash
3
et al. 2020
Silicon
2
0
0
0
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Effect of Work Function Tuning over the Device Characteristics of GAA SNSTFT

Sampson
1
,
Sivakumar
2
,
Velmurugan
3
et al. 2022
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Analytical modelling and sensitivity analysis of Gallium Nitride-Gate Material and, dielectric engineered- Schottky nano-wire fet(GaN-GME-DE-SNW-fet) based label-free biosensor

Sharma
1
,
Nath
2
,
Deswal3
et al. 2022
Microelectronics Journal
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