Two-dimensional MoSi₂As₄-based field-effect transistors integrating switching and gas-sensing functions

Abstract

Multifunctional nanoscale devices integrating the multiple functions are of great importance in meeting the requirement of next-generation electronics. Herein, using first-principles calculations, we propose multifunctional devices based on the two-dimensional...

p-Type High-Performance WSi2N4 MOSFETs with the Ultrashort Scale of Sub-5 nm

“…It is also found that the SS of n-type WSi 2 N 4 MOSFETs with L UL = 2 nm and L g = 5 nm is 71 mV/dec. However, the p-type WSi 2 N 4 MOSFET with L UL = 2 nm and L g = 5 nm exhibits an SS of 60 mV/dec, which is higher than that in the reported WGe 2 N 4, 25 MoSi 2 As 4 transistors, 34 and exactly reaches the limit of the ideal thermionic transistors. 43 Intrinsic Delay Time and Power Dissipation.…”

“…However, I on of p-type WSi 2 N 4 MOSFETs with L g = 5 nm and L UL = 2 nm can reach 1546 μA/μm, which is higher than that reported in p-type MoSi 2 N 4 , WGe 2 N 4 , MoSi 2 As 4 MOSFETs, and far exceeds the ITRS HP targets. 24,25,34 Moreover, I on of n-type MOSFETs with L UL = 1 nm and L g = 5 nm can reach 687 μA/μm, which meets 76% of the ITRS HP goal. For LP applications, I on of all p-and n-type MOSFETs fails to meet the ITRS LP goal (295 μA/μm).…”

“…In our case, the PDPs of p-type (0.033−0.203 fJ/μm) and n-type (0.025−0.163 fJ/μm) WSi 2 N 4 transistors are comparable to those of MoSi 2 N 4 , WGe 2 N 4 , and MoSi 2 As 4 transistors. 24,25,34 In addition, there is an overall decreasing trend in PDP with increasing L UL . These results demonstrate that WSi 2 N 4 MOSFETs have a small switching energy cost and are promising in sub-5 nm-scale transistors.…”

First-Principles Study of Gate-Tunable Reversible Rectifying Behavior in 2D WGe2N4–TaSi2N4 Heterojunction Diodes: Implications for Logic Devices

“…The dielectric equivalent oxide thickness is 0.41 nm and the dielectric constant is 3.9 ε 0 . To obtain excellent device performance in practice, one can adopt the 2D h -BN as the dielectric material, which has been proven as an excellent alternative dielectric material of SiO 2 . When the bias ( V b or V ds ) ( V b = V ds = V d – V s ) and gate voltage ( V g ) were applied to the device, the current can be calculated by the Landauer-Búttiker formula: I ( V ds , V normalg ) = 2 e h ∫ − normal∞ + normal∞ { T false( E , V ds , V g false) false[ f s ( E − μ normals ) − f d ( E − μ normald ) false] } normald E where T ( E , V ds , V g ) is the transmission coefficient, μ is the chemical potential of the electrode.…”

Regulating the electronic properties of the WGe2N4 monolayer by adsorption of 4d transition metal atoms towards spintronic devices

“…27 It has been demonstrated that such materials are superior to TMDs and may be comparable to graphene in various fields including optoelectronics, energy conversion, and nanoelectronics. 28–30 Among the new MA 2 Z 4 materials, WGe 2 N 4 is a non-magnetic semiconductor material with a bandgap of 1.20 eV, high hole mobility (2490 cm 2 V −1 s −1 ), and outstanding environmental stability, and WGe 2 N 4 based electronic devices exhibit excellent performance. 28,31 Therefore, it is worth expecting that introducing magnetism through adsorption of transition metal atoms makes it a promising material for spintronic applications.…”