Two-dimensional monolithic lead chalcogenide infrared sensor arrays on silicon read-out chips and noise mechanisms

Zogg, H.; Alchalabi, Karim; Zimin, Dmitri; Kellermann, K.

doi:10.1109/ted.2002.807257

Cited by 41 publications

(26 citation statements)

References 11 publications

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“…1,2 PbSe, as a typical lead salt material, has attracted considerable interest, mainly due to thermal imaging applications in the 3 lm to 5 lm atmospheric window. 3,4 One of the most important advantages of lead salt materials is that device-quality lead salt semiconductors can be grown on (111) Si substrates because the thermal mismatch strain relaxed through dislocation glides along the {100} h110i planes. 5,6 Hans Zogg has successfully demonstrated lead salt detector arrays grown on (111) Si readout integrated circuits (ROICs) and two-dimensional (2D) focal-plane array imaging.…”

Section: Introductionmentioning

confidence: 99%

Influence of Oxygen Post-Growth Annealing on Optical and Electrical Properties of PbSe Thin Films

Zhao

et al. 2009

Journal of Elec Materi

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PbSe thin films grown on (111)-oriented Si substrates by molecular-beam epitaxy were annealed under an oxygen atmosphere with a variety of temperatures and times. The photoluminescence intensity from the sample annealed at 350°C for 2 h was increased by 400-fold with frontside pumping and increased by 40-fold with backside pumping, respectively, in comparison with the as-grown sample. Furthermore, the mobility was increased twofold after annealing. Such large photoluminescence increases and mobility improvements could be attributed to the surface passivation and the dislocation and defect passivation caused by oxygen diffusion and reaction with the PbSe film.

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Section: Introductionmentioning

confidence: 99%

Influence of Oxygen Post-Growth Annealing on Optical and Electrical Properties of PbSe Thin Films

Zhao

et al. 2009

Journal of Elec Materi

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“…6,7 The molecular beam epitaxial ͑MBE͒ technique has been successfully applied to grow high-quality thin films and heterostructures of PbTe-based alloys. [8][9][10] Highly doped layers ͑Ͼ10 19 cm −3 ͒ are required to increase the impedance-temperature ͑ZT͒ figure of merit in thermoelectric devices 3 and to minimize electrical losses in lasers.…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of PbTe doped with BaF2

Mengui

Abramof

Rappl

et al. 2009

Journal of Applied Physics

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We study here the p-type doping of PbTe with BaF2. For the investigation, PbTe layers were grown on (111) BaF2 substrates by molecular beam epitaxy. The beam flux ratio between BaF2 and PbTe, defined as the nominal doping level, was varied from 0.02% to 1%. The hole density increases from 5×1017 to 1×1019 cm−3 as the doping level rises from 0.02% to 0.4% and saturates at p∼1019 cm−3 for higher levels. The saturation effect was attributed to self-compensation. The carrier concentration of all samples remained almost constant as the temperature was varied from 10 to 350 K, indicating that no thermal activation is present in the whole doping range. It suggests that the impurity level in PbTe doped with BaF2 remains resonant with the valence band, similar to the native defects behavior. The low-temperature mobility showed a pronounced reduction from 50 000 to 2 000 cm2/V s as the doping level rises from 0.02% to 1%, mainly due to the substantial increase in the hole concentration. For temperatures higher than 80 K, the mobility was essentially limited by phonon scattering. Our results demonstrate that a controlled p-type doping of PbTe with BaF2 can be obtained up to 1019 cm−3.

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“…Lead-chalcogenide IR-arrays have been fabricated with cut-off wavelengths ranging from 3 to 12 µm [2]. The Si-substrate may even contain the read-out electronics: A two dimensional monolithic array with 96´128 pixels for the 3-5 µm range has been realized [3].…”

Section: Introductionmentioning

confidence: 99%

“…• cut-off wavelengths between 3 and > 15 µm are obtained by chemical tuning [2,3]. The cut-off wavelength of PbSe at 100 K is 6.9 µm.…”

Section: Introductionmentioning

confidence: 99%

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Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors

Zogg¹,

Arnold²

2006

Opto-Electronics Review

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Narrow spectral band infrared detectors are required for multispectral infrared imaging. Wavelength selectivity can be obtained by placing passive line filters in front of the detectors, or, the preferred choice, by making the detectors themselves wavelength selective. We review the first photovoltaic resonant cavity enhanced detectors (RCED) for the mid-IR range. The lead-chalcogenide (PbEuSe) photodetector is placed as a very thin layer inside an optical cavity. At least one side is terminated with an epitaxial Brugg mirror (consisting of quarter wavelength PbEuSe/BaF2 pairs), while the second mirror may be a metal. Linewidths are as narrow as 37 nm at a peak wavelength of 4400 nm, and peak quantum efficiencies up to above 50% are obtained.

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Two-dimensional monolithic lead chalcogenide infrared sensor arrays on silicon read-out chips and noise mechanisms

Cited by 41 publications

References 11 publications

Influence of Oxygen Post-Growth Annealing on Optical and Electrical Properties of PbSe Thin Films

Influence of Oxygen Post-Growth Annealing on Optical and Electrical Properties of PbSe Thin Films

Electrical properties of PbTe doped with BaF2

Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors

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