Two-dimensional modeling of the underlap graded-channel FinFET

Chattopadhyay, Ankush; Kundu, Atanu; Sarkar, Chandan Kumar; Bose, Chayanika

doi:10.1007/s10825-020-01458-w

“…where, x min is the location of the minimum surface potential from the source-channel interface [26], obtained from the following equation, Further calculation yields, From Eqs. 21 and 23 it is derived as, Various related co-efficients are expressed as, The expressions of P i for ( i = 6 to 10) are specified in Appendix.…”

Section: Threshold Voltage ( V Th )mentioning

confidence: 99%

Analytical Modeling of Sensitivity Parameters Influenced by Practically Feasible Arrangement of Bio-Molecules in Dielectric Modulated FET Biosensor

Das

¹

,

Chattopadhyay²,

Chanda³

et al. 2022

Silicon

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In this paper, analytical modeling of a Dielectric Modulated Double Gate Field Effect Transistor (DM-DGFET) for biosensing application is presented with extensive data analysis. Firstly, the size of the nanogaps and arrangements of biomolecules in those gaps are optimized with respect to the sensitivity of the above sensor. The optimized DM-DGFET is next analyzed on the basis of its modeling and simulation. This paper addresses novel issues arising from arrangements of biomolecules, especially from practical point of view. Effect of probe placement due to steric hindrance and random nature of biomolecules, are also considered. The capacitances associated with the nanogaps occupied by biomolecules, following various arrangements, are modeled. Expressions of the threshold voltage, drain current and its sensitivity in terms of variations are also derived using the capacitance model. A comparative study of the proposed and the existing architectures is made. The influence of process variation on the sensitivity of the sensor is also studied. The results from the proposed analytical model are validated with the simulated data obtained from TCAD device simulator. In conclusion, the proposed DM-DGFET based biosensor architecture will emerge as an optimal model, very useful for the study on this field in future.

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“…where, x min is the location of the minimum surface potential from the source-channel interface [26], obtained from the following equation,…”

Section: Expressions Of Coefficientsmentioning

confidence: 99%

Analytical Modeling of Sensitivity Parameters Influenced by Practically Feasible Arrangement of Bio-molecules in Dielectric Modulated FET Biosensor

Das

¹

,

Chattopadhyay²,

Chanda³

et al. 2021

Preprint

Self Cite

View full text Add to dashboard Cite

In this paper, analytical modeling of a Dielectric Modulated Double Gate Field Effect Transistor (DM-DGFET) for biosensing application is presented with extensive data analysis. Firstly, the size of the nanogaps and arrangements of biomolecules in those gaps are optimized with respect to the sensitivity of the above sensor. The optimized DM-DGFET is next analyzed on the basis of its modeling and simulation. This paper addresses novel issues arising from arrangements of biomolecules, especially from practical point of view. Effect of probe placement due to steric hindrance and random nature of biomolecules, are also considered. The capacitances associated with the nanogaps occupied by biomolecules, following various arrangements, are modeled. Expressions of the threshold voltage, drain current and its sensitivity in terms of variations are also derived using the capacitance model. A comparative study of the proposed and the existing architectures is made. The influence of process variation on the sensitivity of the sensor is also studied. The results from the proposed analytical model are validated with the simulated data obtained from TCAD device simulator. In conclusion, the proposed DM-DGFET based biosensor architecture will emerge as an optimal model, very useful for the study on this field in future.

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“…Modeling of sub-threshold drain current is obtained from the current density along xdirection [34], [35]. The expression is derived taking into account of the drift and the diffusion components of the carriers, as follows,…”

Section: Expression Of V Mmentioning

confidence: 99%

“…Robust Meshing strategy is adopted for accuracy. The empirical terms introduced in the model are taken from [35], [37]. The body (substrate) and the source terminals are shorted and connected to ground.…”

Section: Device Parameters and Simulationmentioning

confidence: 99%

Performance analysis of dual material junction accumulation mode tri gate junctionless SOI FET: Modeling and Simulation

Goswami

¹

,

Chattopadhyay²,

Bose

³

2021

Preprint

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0

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The paper illustrates the performance of Tri-Gate (TG) Dual Material (DM) SOI (Silicon on Insulator) Junctionless (JL) FET operating in Junction Accumulation Mode (JAM). An analytical model is developed to evaluate its performance. The device is also simulated using Silvaco device simulator. Both the analytical and simulation results are compared and found to match closely. Quasi 3-D modeling approach is adopted here to determine the surface potential of the above device. In this technique, the entire 3-D device is segregated into two 2-D devices with certain physical constraints. These 2-D devices are then analyzed separately to obtain the surface potentials, which are added together using suitable multiplication factors to get the surface potential of the 3-D device. This surface potential is, in turn, used to model the threshold voltage, sub-threshold drain current ( I d,sub ) and the drain induced barrier lowering (DIBL). The proposed device configuration reduces the I OFF significantly and offers excellent immunity to SCEs. The response of the proposed device is studied for the variations of certain device parameters, such as, thickness of High- K dielectric layer in stack gate, channel doping, and the workfunctions as well as lengths of the gate metals. Such study will lead to turn the proposed device immune to short channel effects through proper choice of various parameters.

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Two-dimensional modeling of the underlap graded-channel FinFET

Cited by 14 publications

References 30 publications

Analytical Modeling of Sensitivity Parameters Influenced by Practically Feasible Arrangement of Bio-Molecules in Dielectric Modulated FET Biosensor

Analytical Modeling of Sensitivity Parameters Influenced by Practically Feasible Arrangement of Bio-Molecules in Dielectric Modulated FET Biosensor

Analytical Modeling of Sensitivity Parameters Influenced by Practically Feasible Arrangement of Bio-molecules in Dielectric Modulated FET Biosensor

Performance analysis of dual material junction accumulation mode tri gate junctionless SOI FET: Modeling and Simulation

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