Two-dimensional 
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-InSe/
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-GeSe(SnS) van der Waals heterojunctions: High carrier mobility and broadband performance

Xia, Congxin; Du, Juan; Huang, Xiaowei; Xiao, Wenbo; Xiong, Wenqi; Wang, Tian-xing; Wei, Zhongming; Jia, Yu; Shi, Junjie; Li, Jingbo

doi:10.1103/physrevb.97.115416

Cited by 125 publications

(53 citation statements)

References 45 publications

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“…The states of lowest-energy electrons and the highest-energy holes are localized in the down layer and up layer, respectively, which cause the effective separation of electrons and holes with type-II band edge alignments. Therefore, the spatially indirect exciton recombination occurs through the staggered gap of bilayer, which is important for optoelectronic applications [12].…”

Section: Electronic Structuresmentioning

confidence: 99%

“…It is very important to study optical absorption in optoelectronic devices. Based on the frequency-dependent dielectric function ε(ω), the optical absorption coefficient a(ω) of monolayer and bilayer α-GeTe can be calculated according to the formula [12,22]:…”

Section: Optical Propertiesmentioning

confidence: 99%

“…These 2D materials can work in electronic or optoelectronic applications [7,8] due to tunable electronic properties [9] and superior flexibility under tensile strain [10]. However, there are more or less challenges in 2D materials, such as the facile degradation of phosphorene in air [11], low hole mobility, and weak absorption of the visible light of indium selenide (InSe) [12], as well as the zero band gap of graphene [7], silicene [13], and germanene [14]. Therefore, it is necessary to investigate new 2D materials with outstanding stability, high carrier mobility, and desired band gap.…”

Section: Introductionmentioning

confidence: 99%

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Tunable Electric Properties of Bilayer α-GeTe with Different Interlayer Distances and External Electric Fields

et al. 2018

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Based on first-principle calculations, the stability, electronic structure, optical absorption, and modulated electronic properties by different interlayer distances or by external electric fields of bilayer α-GeTe are systemically investigated. Results show that van der Waals (vdW) bilayer α-GeTe has an indirect band structure with the gap value of 0.610 eV, and α-GeTe has attractively efficient light harvesting. Interestingly, along with the decrease of interlayer distances, the band gap of bilayer α-GeTe decreases linearly, due to the enhancement of interlayer vdW interaction. In addition, band gap transition is originated from the electric field-induced near free-electron gas (NFEG) under the application of positive electrical fields. However, when the negative electric fields are applied, there is no NFEG. On account of these characteristics of bilayer α-GeTe, a possible data storage device has been designed. These results indicate that bilayer α-GeTe has a potential to work in new electronic and optoelectronic devices.

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Section: Electronic Structuresmentioning

confidence: 99%

Section: Optical Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Tunable Electric Properties of Bilayer α-GeTe with Different Interlayer Distances and External Electric Fields

et al. 2018

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“…The PL quenching ratio (PL Intensity InSe /PL Intensity InSe/GeSe) is calculated to be 145 times, which implies that the charge separation occurs in the heterostructure region due to the large difference in WF. [ 38–40 ]…”

Section: Resultsmentioning

confidence: 99%

Reversible Half Wave Rectifier Based on 2D InSe/GeSe Heterostructure with Near‐Broken Band Alignment

Yan

et al. 2021

Advanced Science

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2D van der Waals heterostructures (vdWHs) offer tremendous opportunities in designing multifunctional electronic devices. Due to the ultrathin nature of 2D materials, the gate‐induced change in charge density makes amplitude control possible, creating a new programmable unilateral rectifier. The study of 2D vdWHs‐based reversible unilateral rectifier is lacking, although it can give rise to a new degree of freedom for modulating the output state. Here, a InSe/GeSe vdWH‐FET is constructed as a gate‐controllable half wave rectifier. The device exhibits stepless adjustment from forward to backward rectifying performance, leading to multiple operation states of output level. Near‐broken band alignment in the InSe/GeSe vdWH‐FET is a crucial feature for high‐performance reversible rectifier, which is shown to have backward and forward rectification ratio of 1:38 and 963:1, respectively. Being further explored as a new bridge rectifier, the InSe/GeSe device has great potential in future gate‐controllable alternating current/direct current convertor. These results indicate that 2D vdWHs with near‐broken band alignment can offer a pathway to simplify the commutating circuit and regulating speed circuit.

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“…Also, direct band gap semiconductors have been obtained by stacking 2D n-InSe and p-GeSe(SnS). And the band gap values and band offset of these van der Waals heterojunctions can be tuned by the interlayer coupling and external electric field [50]. In addition, the possible stacking configurations of bilayer InSe and the influence of the perpendicular electric field on their electronic structures are studied.…”

Section: Introductionmentioning

confidence: 99%

Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe

Xiao

Liu

et al. 2019

Nanoscale Res Lett

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Electronic structures of monolayer InSe with a perpendicular electric field are investigated. Indirect-direct-indirect band gap transition is found in monolayer InSe as the electric field strength is increased continuously. Meanwhile, the global band gap is suppressed gradually to zero, indicating that semiconductor-metal transformation happens. The underlying mechanisms are revealed by analyzing both the orbital contributions to energy band and evolution of band edges. These findings may not only facilitate our further understanding of electronic characteristics of layered group III-VI semiconductors, but also provide useful guidance for designing optoelectronic devices.

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Two-dimensional n -InSe/ p -GeSe(SnS) van der Waals heterojunctions: High carrier mobility and broadband performance

Cited by 125 publications

References 45 publications

Tunable Electric Properties of Bilayer α-GeTe with Different Interlayer Distances and External Electric Fields

Tunable Electric Properties of Bilayer α-GeTe with Different Interlayer Distances and External Electric Fields

Reversible Half Wave Rectifier Based on 2D InSe/GeSe Heterostructure with Near‐Broken Band Alignment

Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe

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