Two-dimensional materials and their prospects in transistor electronics

Abstract

During the past decade, two-dimensional materials have attracted incredible interest from the electronic device community. The first two-dimensional material studied in detail was graphene and, since 2007, it has intensively been explored as a material for electronic devices, in particular, transistors. While graphene transistors are still on the agenda, researchers have extended their work to two-dimensional materials beyond graphene and the number of two-dimensional materials under examination has literally exploded recently. Meanwhile several hundreds of different two-dimensional materials are known, a substantial part of them is considered useful for transistors, and experimental transistors with channels of different two-dimensional materials have been demonstrated. In spite of the rapid progress in the field, the prospects of two-dimensional transistors still remain vague and optimistic opinions face rather reserved assessments. The intention of the present paper is to shed more light on the merits and drawbacks of two-dimensional materials for transistor electronics and to add a few more facets to the ongoing discussion on the prospects of two-dimensional transistors. To this end, we compose a wish list of properties for a good transistor channel material and examine to what extent the two-dimensional materials fulfill the criteria of the list. The state-of-the-art two-dimensional transistors are reviewed and a balanced view of both the pros and cons of these devices is provided.

Atomic Layer Deposition of Crystalline MoS2 Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

“…[6,[14][15][16] The appealing properties of TMDCs have led to a wide range of proposed applications. MoS 2 has been extensively studied as a channel material in conventional field-effect transistors, [17][18][19][20][21] as well as phototransistors and other optoelectronic devices. [16,21,22] The 2D structure of TMDCs plays a crucial role in possible applications relying on more exotic quantum phenomena, such as valleytronics.…”

Особенности вольт-фарадных характеристик МДП-структуры Cu-SiO-=SUB=-2-=/SUB=--p-InSb

“…Стабильность и надежность длительно функционирующих МДП-прибо-ров зависят от таких важных характеристик как заряд окисла и плотность поверхностных состояний [3,4]. Эти характеристики в свою очередь очень сильно зависят от природы диэлектрика и технологических приемов его нанесения на полупроводник при изготовлении МДП-структур [5][6][7].…”

Two-Dimensional Electronics — Prospects and Challenges

“…A milestone in this direction was the demonstration of the first MOSFETs with single-layer MoS 2 channels by the Kis group in 2011 [9]. Meanwhile, hundreds of 2D materials beyond graphene have been discovered-many of them possess sizeable bandgaps and, therefore, are potentially useful for electronics [10][11][12][13]. This has led to intensive research on the application of 2D materials beyond graphene in the More Moore domain of semiconductor electronics, i.e., digital complementary MOS, and in the More Than Moore domain.…”