Two‐dimensional magnetic transition metal chalcogenides

Huang, Yu Li; Chen, Wei; Wee, Andrew Thye Shen

doi:10.1002/smm2.1031

Cited by 67 publications

(53 citation statements)

References 107 publications

(165 reference statements)

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“…The exploration of 2D intrinsic magnetic materials has aroused prodigious research interest due to their potential applications in spintronic devices. ,,− Nevertheless, most reported 2D magnets are extremely unstable and possess intricate phases and relatively low critical temperatures, which hinder the further explorations regarding application and internal mechanism. The CVD-synthesized high-quality 2D FeTe provides a cornerstone for investigating the magnetism.…”

Section: Resultsmentioning

confidence: 99%

Phase-Tunable Synthesis and Etching-Free Transfer of Two-Dimensional Magnetic FeTe

et al. 2021

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Two-dimensional (2D) Fe-chalcogenides (e.g., FeS, FeSe, and FeTe, etc.) have sparked extensive interest due to their rich phase diagrams including superconductivity, magnetism, and topological state, as well as versatile applications in electronic devices and energy related fields. However, the phase-tunable synthesis and green transfer of such fascinating materials still remain challenging. Herein, we develop a temperature-mediated chemical vapor deposition (CVD) approach to grow ultrathin nonlayered hexagonal and layered tetragonal FeTe nanosheets on mica substrates, with their thicknesses down to ∼2.3 and ∼4.0 nm, respectively. Interestingly, we have observed exciting ferromagnetism with the Curie temperature approaching ∼300 K and high conductivity (∼1.96 × 105 S m–1) in 2D hexagonal FeTe. More significantly, we have designed a swift, high-efficiency, and etching-free method for the transfer of 2D FeTe nanosheets onto arbitrary substrates, and such a transfer strategy enables the cyclic utilization of growth substrates. These results should propel the further development of phase-tunable synthesis and green transfer of 2D Fe-chalcogenides, as well as their potential applications in spintronic devices.

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Section: Resultsmentioning

confidence: 99%

Phase-Tunable Synthesis and Etching-Free Transfer of Two-Dimensional Magnetic FeTe

et al. 2021

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“…[ 8 ] Moreover, TMDs also have enticing qualities in the fields of magnetism and catalysis. [ 9–11 ]…”

Section: Introductionmentioning

confidence: 99%

“…[8] Moreover, TMDs also have enticing qualities in the fields of magnetism and catalysis. [9][10][11] Without the controllable preparation of their solid thin films, these various applications will not be accomplished. Chemical vapor deposition (CVD) has proven to be a versatile platform for generating solid several-atom-thick films of 2D materials and is being pushed to adapt more and more manufacturing requirements via chemical reactions on a heated substrate among those as-developed techniques.…”

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confidence: 99%

Additive‐Assisted Growth of Scaled and Quality 2D Materials

Qing

Xiao

Lin

et al. 2022

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have a lattice structure that is quite similar to that of graphene, and it has important applications in heat conduction, lubrication, hydrogen storage, battery diaphragm materials, high temperature anti-oxidation coatings, catalysis and other fields. [6] Transition metal dichalcogenides (TMDs) materials, as compared to graphene, break through the application bottleneck of zero band gap and have shown to be useful on electrical devices. [7] The ability to convert indirect bandgaps into direct bandgaps increases their applicability in optoelectronic devices even further. [8] Moreover, TMDs also have enticing qualities in the fields of magnetism and catalysis. [9][10][11] Without the controllable preparation of their solid thin films, these various applications will not be accomplished. Chemical vapor deposition (CVD) has proven to be a versatile platform for generating solid several-atom-thick films of 2D materials and is being pushed to adapt more and more manufacturing requirements via chemical reactions on a heated substrate among those as-developed techniques. Figure 1 graphically depicts the CVD growth mechanisms of graphene, h-BN and TMDs. Researchers have optimized the CVD development from a variety of perspectives over the last few decades, including improving product and pollution removal, making it more and more suitable for modern industry. [12,13] Moreover, significant progress has been made in wafer-scale preparations, [12,14] heterojunctions, [15][16][17][18] superlattices, [19,20] super-clean products, [21][22][23] and the use of liquid metal substrates, [24,25] However, other concerns still need to be solved, for example, such as the high reaction temperature, low growth rate, smallarea domains, and poor repeatability between labs. As a result, researchers have experimented with various additives to tackle these issues. By regulating kinetics, tuning sublimation temperature, minimizing flaws, and so on, this is a relatively low-cost method of improving the growth environment of 2D materials. Recent scientific research development has been satisfying. The introduction of additives has demonstrated outstanding results in terms of lowering reaction temperature, increasing reaction speed, ensuring smooth growth, and lowering nucleation density.The most recent advancements in the field of additivesassisted CVD production of 2D materials have been carefully described in this review. The additives are separated into categories based on the materials to be used and their natural forms, which mostly include vapors and solids. This section focuses on modified CVD equipments, influence factors, and product 2D materials are increasingly becoming key components in modern electronics because of their prominent electronic and optoelectronic properties. The central and premise to the entire discipline of 2D materials lie in the high-quality and scaled preparations. The chemical vapor deposition (CVD) method offers compelling benefits in terms of scalability and controllability in shaping largearea and high-quality...

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“…In a VOFET, the active layer is sandwiched between the mesh source and drain electrodes, and the charge is transmitted through the entire active layer, which is the bulk transmission. Thus, VOFETs aer able to achieve a large current density and high operating frequency under low working voltage, which has attracted widespread attention in the field of electronic devices and has been widely used in various applications, such as photoelectronic memories, artificial synapses, organic light-emitting transistors, and flexible electronic devices. − ,− …”

Section: Introductionmentioning

confidence: 99%

Heterostructured Vertical Organic Transistor for High-Performance Optoelectronic Memory and Artificial Synapse

Gao

Yang

et al. 2021

ACS Photonics

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Organic field-effect transistor (OFET) memory has received widespread attention due to its easy integration, precise charge modulation, and multi-level memory. However, the performance of organic memory still needs to be improved for its practical application, and the reported technologies are strongly dependent on an additional charge-trapping layer, which increases the complexity of the device. Here, we report a heterostructured vertical organic memory transistor, which uses a p/n semiconductor bulk heterojunction as a semiconductor layer without using any additional charge-trapping layers. The device exhibits a large memory window of 52 V, and the memory ratio reaches 10 5 through electrical operation. Benefiting from the formation of the p/n semiconductor interface and the nanometer-scale transmission length, under the stimulation of visible light, the device achieved a 58 V memory window, high memory ratio 10 5 , and retention characteristics of over 10 years, which is better than those of most reported optical organic memory devices. More interestingly, we found that as the level of the doping in the n-type semiconductor increased, the device could transform from nonvolatile memory to artificial synapse, which is associated with the morphology of a heterojunction structure. Hence, we demonstrate a novel technique to manufacture high-performance nonvolatile optoelectronic memory and artificial synapse, which shows great potential in OFET-based memory and neuromorphic devices.

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Two‐dimensional magnetic transition metal chalcogenides

Cited by 67 publications

References 107 publications

Phase-Tunable Synthesis and Etching-Free Transfer of Two-Dimensional Magnetic FeTe

Phase-Tunable Synthesis and Etching-Free Transfer of Two-Dimensional Magnetic FeTe

Additive‐Assisted Growth of Scaled and Quality 2D Materials

Heterostructured Vertical Organic Transistor for High-Performance Optoelectronic Memory and Artificial Synapse

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