Two-Dimensional Layered Materials Meet Perovskite Oxides: A Combination for High-Performance Electronic Devices

Abstract

As the Si-based transistors scale down to atomic dimensions, the basic principle of current electronics, which heavily relies on the tunable charge degree of freedom, faces increasing challenges to meet the future requirements of speed, switching energy, heat dissipation, and packing density as well as functionalities. Heterogeneous integration, where dissimilar layers of materials and functionalities are unrestrictedly stacked at an atomic scale, is appealing for next-generation electronics, such as multifunctional, neuromorphic, spintronic, and ultralow-power devices, because it unlocks technologically useful interfaces of distinct functionalities. Recently, the combination of functional perovskite oxides and two-dimensional layered materials (2DLMs) led to unexpected functionalities and enhanced device performance. In this paper, we review the recent progress of the heterogeneous integration of perovskite oxides and 2DLMs from the perspectives of fabrication and interfacial properties, electronic applications, and challenges as well as outlooks. In particular, we focus on three types of attractive applications, namely field-effect transistors, memory, and neuromorphic electronics. The van der Waals integration approach is extendible to other oxides and 2DLMs, leading to almost unlimited combinations of oxides and 2DLMs and contributing to future high-performance electronic and spintronic devices.

Surface plasmon enhancement in silver nanowires and bilayer two-dimensional materials

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Simulation based analysis of HK-Ge-Step-FinFET and its usage as inverter & SRAM

“…Transistor dimensions have been scaled down to nanoscale dimensions to enhance the driving capability and switching speed. The system's density and overall power consumption have increased due to the exponential growth in transistor numbers [1][2][3]. Scaling may be described as the process of reducing the size of features, which often results in improved and more rapid performance as well as more gates per chip [4][5][6][7].…”

Magneto-Transport and Enhanced Spin-Polarized Photo Response in Solution-Processed Vertically Aligned Zn0.9Ni0.1O Nanowires

“…Spintronics, which harnesses both the charge and spin of electrons, has emerged as a promising field for next-generation electronic and information-processing devices. While various materials have been explored for spintronic applications, it is crucial to highlight the unique advantages offered by ZnO films [1][2][3]. Firstly, ZnO is a direct wide-bandgap semiconductor, making it well-suited for efficient charge carrier injection and transport in spintronic devices.…”