Two-dimensional Janus SVAN₂ (A = Si, Ge) monolayers with intrinsic semiconductor character and room temperature ferromagnetism: tunable electronic properties via strain and an electric field

Abstract

2D Janus SVAZ2 (A = Si, Ge) monolayers with room temperature ferromagnetism and tunable electronic properties.

Two-dimensional Janus SeMoZAZ′ (A = Si, Ge; Z = N, P, As; Z ≠ Z′): multifunctional properties for electronic, piezoelectric and photocatalytic applications

“…These structures demonstrated outstanding photocatalytic, piezoelectric, Rashba-type spin splitting, and electronic properties that could be tuned to magnetic transition temperatures higher than room temperature. [20][21][22][23][24][25][26][27] The exceptional physical properties of these materials position them as versatile candidates for applications in electronic devices, optoelectronic devices, and spin electronic devices.…”