Two-dimensional group-VA nanomaterials beyond black phosphorus: synthetic methods, properties, functional nanostructures and applications

Gui, Rijun; Jin, Hui; Sun, Yangang; Jiang, Xiaowen; Sun, Zejun

doi:10.1039/c9ta09582a

Cited by 56 publications

(23 citation statements)

References 440 publications

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“…This kind of emerging materials have considerable prospects in the application of field effect transistors, photodetectors, gas sensors, especially Li/Na ion and Li-S batteries. [38][39][40][41][42] Phosphorene, first fabricated in 2014, was the most studied material among group-VA 2D materials. [43][44][45][46] Lots of experiments and theoretical calculations have been done for the utilization of phosphorene in improving the performance of Li-S batteries.…”

Section: Introductionmentioning

confidence: 99%

Arsenene, antimonene and bismuthene as anchoring materials for lithium‐sulfur batteries: A computational study

Mao

Zhu

2021

Int J of Quantum Chemistry

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Finding effective anchoring materials for the immobilization of soluble lithium polysulfides to suppress the shuttling effect has become the key to large-scale application of lithium-sulfur (Li-S) batteries. In this work, the potentials of group-VA twodimensional (2D) materials including arsenene, antimonene and bismuthene (As, Sb and Bi monolayers) as Li-S battery cathode anchoring materials were systematically investigated by density functional theory (DFT) calculations. The adsorption energies of sulfur (S 8 ) and various lithium polysulfides (Li 2 S n , n = 8, 6, 4, 2, 1), as well as the diffusion energy barriers for long-chain Li 2 S 4 and Li 2 S 6 on these three monolayers were studied in detail. The calculated moderate adsorption energies of these monolayers to all polysulfides imply that they can effectively inhibit the shuttling effect. The favorable diffusion barriers for Li 2 S 4 and Li 2 S 6 ensure the efficient diffusion of polysulfides on monolayer surface. In addition, these 2D materials can keep a balance between binding strength and the structural integrity of polysulfides. The presented merits demonstrate that As, Sb and Bi monolayers can be the promising cathode anchoring materials to improve performance of Li-S batteries.

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Section: Introductionmentioning

confidence: 99%

Arsenene, antimonene and bismuthene as anchoring materials for lithium‐sulfur batteries: A computational study

Mao

Zhu

2021

Int J of Quantum Chemistry

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“…Therefore, an intriguing and important question is how robust a TI phase can be against bulk defects? While the bulk defects have been studied in arsenene [3][4][5], antimonene [4,6], bismuthene [7][8][9], and 3D Bichalcogenide [10][11][12][13], their influence on topological properties, especially how different bulk defects would destroy topological order, are still under-studied [6,7,14]. In this Rapid Communication, we attempt to address this outstanding question for the most typical defects of vacancy (VA), vacancy cluster (VC), and grain boundary (GB), first in general within the theoretical framework of tight-binding (TB) model of 2D TI [15][16][17][18], and then in specific for a prototypical large-gap 2D TI, SiC-supported monolayer Bi, based on first-principles calculation.…”

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confidence: 99%

Robustness of topological insulating phase against vacancy, vacancy cluster, and grain boundary bulk defects

Huang

Liu

2020

Phys. Rev. B

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One distinguished property of topological insulator (TI) is its robust quantized edge conductance against edge defect. However, this robustness, underlined by the topological principle of bulk-boundary correspondence, is conditioned by assuming a perfect bulk. Here, we investigate the robustness of TI phase against bulk defects, including vacancy (VA), vacancy cluster (VC), and grain boundary (GB), instead of edge defect. Based on a tight-binding model analysis, we show that a 2D TI phase, as characterized by a non-zero spin Bott index, will vanish beyond a critical VA concentration (n c v ). Generally, n c v decreases monotonically with the decreasing topological gap induced by spin-orbit coupling. Interestingly, the n c v to destroy the topological order, namely the robustness of the TI phase, is shown to be increased by the presence of VC but decreased by GB. As a specific example of large-gap 2D TI, we further show that the surface-supported monolayer Bi can sustain a nontrivial topology up to n c v ~ 17%, based on a densityfunctional-theory-Wannier-function calculation. Our findings should provide useful guidance for future experimental studies of effects of defects on TIs.

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“…Thus it is challenging to obtain large-area films. [20,21] On the other hand, classic bottom-up methods include chemical vapor deposition (CVD) [22] , magnetron sputtering [23,24] and molecular beam epitaxy [25] , etc. These methods usually require the high vacuum or complex equipment, largely limiting the practical applications.…”

Section: Soft Sciencementioning

confidence: 99%

Improved thermoelectric performance in n-type flexible Bi2Se3+x/PVDF composite films

Zou¹,

Shang²,

Huang³

et al. 2021

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Two-dimensional group-VA nanomaterials beyond black phosphorus: synthetic methods, properties, functional nanostructures and applications

Abstract: This review summarizes recent advances on synthesis, properties, functional nanostructures and applications of two-dimensional group-VA nanomaterials beyond black phosphorus.

Cited by 56 publications

References 440 publications

Arsenene, antimonene and bismuthene as anchoring materials for lithium‐sulfur batteries: A computational study

Arsenene, antimonene and bismuthene as anchoring materials for lithium‐sulfur batteries: A computational study

Robustness of topological insulating phase against vacancy, vacancy cluster, and grain boundary bulk defects

Improved thermoelectric performance in n-type flexible Bi2Se3+x/PVDF composite films

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