“…In 2016, Balushi et al realized 2D GaN nanosheets and found its intriguing physical properties [146,147], such as its thickness-independent bandgap. Building on this fundamental study, Zhang et al surveyed the possibility of 2D GaN to be applied in AMIBs through a theoretical calculation [148]. It was calculated that 2D GaN had small diffusion barrier for Li (79 meV) and Na (22 meV), much lesser than other 2D materials, such as VS 2 , MoS 2 , phosphorene, borophene, graphite.…”