Two-dimensional ferroelectricity and switchable spin-textures in ultra-thin elemental Te multilayers

Wang, Yao; Xiao, Chengcheng; Chen, Miaogen; Zou, Jianfeng; Wu, Chen; Jiang, J.Z.; Yang, Shengyuan A.; Lu, Yunhao; Ji, Wei

doi:10.1039/c8mh00082d

Cited by 97 publications

(97 citation statements)

References 36 publications

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“…In addition, Lu's group revealed spontaneous electric polarization and ferroelectricity in 2D elemental Group-V (As, Sb, and Bi) monolayers with the puckered lattice structure similar to that of phosphorene. Based on their research, [61,62] a general model came under construction for the understanding and search of 2D ferroelectric and antiferroelectric materials in future studies.…”

Section: D Materialsmentioning

confidence: 99%

Advances in Functional Nanomaterials Science

Rahimi‐Iman

2020

Annalen der Physik

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Technologies employing nanomaterials, such as electronics, optoelectronics, nanobiotechnologies, quantum optics, and nanophotonics, are perceived as the key drivers of investigations on novel and functional materials and their nanostructures for various applications. It is well understood that the study of such materials and structures has been of great importance for the optimization and development of electrical and optical devices. From such devices, one does not only expect higher efficiencies, but also access to the development of completely new concepts, which are strongly demanded by modern information‐processing, quantum, or medical technologies, and sensing applications. In this context, a wide range of aspects such as the physics of novel materials, as well as materials engineering, characterization, and applications are summarized here. Novel materials, which can be used, for instance, for energy harvesting or light generation, as well as for future logic devices; material engineering, which can lead to improved device functionality and performance in optoelectronics; material physics, the study of which allows insight to be gained into optical and electrical properties of nanostructured systems and quantum materials; and technologies/devices, addressing progress on the application side of sophisticated material systems and quantum structures, are highlighted using representative examples.

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Section: D Materialsmentioning

confidence: 99%

Advances in Functional Nanomaterials Science

Rahimi‐Iman

2020

Annalen der Physik

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“…Recent studies indicate that low-dimensional tellurium can show different structures which may lead to versatile electronic properties [35,36]. Previous studies also indicated that several materials based on a square or rectangular lattice can host the quantum spin Hall phase [17,[37][38][39].…”

Section: A Structures and Topological Phase Transitions Of The Monolmentioning

confidence: 99%

Topological phase transitions driven by strain in monolayer tellurium

Zhang

Yazyev

et al. 2018

Phys. Rev. B

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Two-dimensional (2D) Xenes of a single type of element can offer fascinating electronic properties, such as massless Dirac fermions for extremely high charge-carrier mobility and topological insulators for dissipationless electron transport. However, the realization of either the massless Dirac fermions or the topological insulator in a same element system via a simple physical method has rarely been reported, which is of great importance for the development of next-generation electronic devices. Here, by using first-principles calculations, we identify that a 2D square tellurium system can be effectively tuned to realize either the massless Dirac fermions or the topological insulator phase. The 2D square tellurium system shows three structural phases via strain effect, i.e., buckled square, buckled rectangular, and planar square phases, which exhibit extraordinary topological properties. There are four anisotropic Dirac points in the buckled square phase, in which the Fermi velocity can be as high as 9.44 × 10 5 m/s. The buckled rectangular phase can behave as a quantum spin Hall insulator with a band gap of 0.24 eV, pointing towards promising applications for room-temperature devices. There also exist nodal lines in buckled square/planar square structures in the non-spin-orbit-coupling case. These findings extend the knowledge on single-layer materials and promote future applications of the 2D tellurium systems.

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“…6 Te NWs often exhibit low defect density, enhanced thermoelectric performance, and photoconductivity. [7][8][9][10] Here, we report on success in preparing controlled aspect ratio Te NWs, and demonstrate their use as a buffer layer for the back contact of cadmium telluride (CdTe) photovoltaic (PV) devices.…”

Section: Introductionmentioning

confidence: 99%