Two-Dimensional Electron Gas in Thin N-Polar GaN Channels on AlN on Sapphire Templates
Markus Pristovsek,
Itsuki Furuhashi,
Xu Yang
et al.
Abstract:We report on 2-dimensional electron gases realized in binary N-polar GaN channels on AlN on sapphire templates grown by metal–organic vapor phase epitaxy. The measured sheet carrier density of 3.8×1013 cm−2 is very close to the theoretical value of 3.95×1013 cm−2 due to the low carbon and oxygen background doping in the N-polar GaN if grown with triethyl-gallium. By inserting an intermediate AlN transition layer, room temperature mobilities in 5 nm channels up to 100 cm2/Vs were realized, probably limited by d… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.