2016
DOI: 10.1039/c5cp06627a
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Two-dimensional electron gas at the LaAlO3/SrTiO3 inteface with a potential barrier

Abstract: We present a tight binding description of electronic properties of the interface between LaAlO3 (LAO) and SrTiO3 (STO). The description assumes LAO and STO perovskites as sets of atomic layers in the x-y plane, which are weakly coupled by an interlayer hopping term along the z axis. The interface is described by an additional potential, U0, which simulates a planar defect. Physically, the interfacial potential can result from either a mechanical stress at the interface or other structural imperfections. We sho… Show more

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Cited by 9 publications
(12 citation statements)
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“…Despite intense experimental and theoretical studies, the statistics of tunneling electrons through barriers in such structures remains unclear due to disorder which is inevitably present in such structures [52,53]. The above barriers are technologically realized in inversion semiconductor layers, heterostructures (like perovskite interface LaAlO 3 -SrTiO 3 [54][55][56]), quantum wells or in graphene [52,53,57]. The common formalism for description of electronic states in the above structures is different variations of particle in a potential well prob-lem (see, e.g.…”
Section: Discussionmentioning
confidence: 99%
“…Despite intense experimental and theoretical studies, the statistics of tunneling electrons through barriers in such structures remains unclear due to disorder which is inevitably present in such structures [52,53]. The above barriers are technologically realized in inversion semiconductor layers, heterostructures (like perovskite interface LaAlO 3 -SrTiO 3 [54][55][56]), quantum wells or in graphene [52,53,57]. The common formalism for description of electronic states in the above structures is different variations of particle in a potential well prob-lem (see, e.g.…”
Section: Discussionmentioning
confidence: 99%
“…One class of such systems is an electronic ensemble, which tunnels through potential barriers in so-called spintronic devices (see [96][97][98] and references therein). One of the realistic examples here is heterostructures like the LaAlO 3 /SrTiO 3 interface [99][100][101]. To describe the experimental data related to above tunneling statistics, fractional derivatives should be introduced in the conventional quantum-mechanical problem of a tunneling particle.…”
Section: A General Considerationsmentioning
confidence: 99%
“…The influence of technologically unavoidable disorder is modeled by the introduction of fractional derivative (−∆) 1/2 instead of ordinary gradient d/dz. Our further notations are as follows [100] s c (z) = s c1 [1 − θ(z)] + s c2 θ(z),…”
Section: A General Considerationsmentioning
confidence: 99%
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“…Well-known examples are the interfaces between perovskite oxides [1,2], which may have all the above properties [1,3,4] along with metallic interfacial conductivity [5][6][7][8]. Here we report the first time observation of local superconductivity in the magnetoelectric Pb(Fe 1/2 Sb 1/2 )O 3 (PFS).…”
Section: Introductionmentioning
confidence: 80%