Two-dimensional computer simulation for switching a bipolar transistor out of saturation

Manck, O.; Engl, W.L.

doi:10.1109/t-ed.1975.18133

Cited by 48 publications

(4 citation statements)

References 16 publications

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“…An analysis taking into account this disturbance in charge density will give more accurate results than one that simply assumes a critical electric field E , . Twodimensional models of BJT turnoff (Manck and Engl 1975, Turgeon and Navon 1978, Hwang et al 1986) have dealt mainly with the internal behaviour of transistors during turnoff and have not included a carrier generation term in their equations.…”

Section: M Shahidul Hassan and H Domingosmentioning

confidence: 99%

Estimate of peak voltage for triggering current mode second breakdown of BJTs during inductive turnoff

Hassan

Domingos

1989

International Journal of Electronics

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Calculation of the peak voltage which triggers avalanche injection in an n+pnn+ bipolar transistor with an inductive load has been carried out. An approach has been taken where the effects of both the ionization rates and the space-charge current density on carrier generation are included in evaluation of the peak voltage. Calculated peak voltage is found to be dependent on epitaxial layer thickness and on collector doping level. The analytical results are in excellent agreement with experimental data.

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Section: M Shahidul Hassan and H Domingosmentioning

confidence: 99%

Estimate of peak voltage for triggering current mode second breakdown of BJTs during inductive turnoff

Hassan

Domingos

1989

International Journal of Electronics

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“…Therefore a certain time is required for carriers to propagate perpendicularly to the emitter stripe and to reach in the central region of the transistor the steady state value. That was pointed out by Manck et al [3] who studied the switching behaviour of transistor by numerical simulation.…”

mentioning

confidence: 92%

The turn off time of high voltage epitaxial transistors

Chiavarotti¹,

Conti²,

Luciani³

1978

Rev. Phys. Appl. (Paris)

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“…Many works have been written on numerical simulation in semiconductor device theory [1][2][3][4][5][6]. In this paper we consider the following problem: where x = (x 1 , x 2 , .…”

Section: Introductionmentioning

confidence: 99%

Numerical Solution of an Initial‐value Problem for a Semiconductor Device

Pen‐Yu

1983

COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering

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show abstract

Two-dimensional computer simulation for switching a bipolar transistor out of saturation

Cited by 48 publications

References 16 publications

Estimate of peak voltage for triggering current mode second breakdown of BJTs during inductive turnoff

Estimate of peak voltage for triggering current mode second breakdown of BJTs during inductive turnoff

The turn off time of high voltage epitaxial transistors

Numerical Solution of an Initial‐value Problem for a Semiconductor Device

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