Two-dimensional array of self-assembled AlInAs quantum wires

Francoeur, S.; Norman, A. G.; Mascarenhas, A.; Jones, E. D.; Reno, John L.; Lee, S. R.; Follstaedt, D. M.

doi:10.1063/1.1493222

Cited by 6 publications

(3 citation statements)

References 14 publications

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“…Several groups have reported on the growth of selfassembled nanowires on vicinal substrates [12][13][14][15][16][17][18][19][20]. Figure 5 illustrates the process of nanowires growth on vicinal substrates.…”

Section: Growth On Vicinal Substratesmentioning

confidence: 99%

Developing 1D nanostructure arrays for future nanophotonics

et al. 2006

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There is intense and growing interest in one-dimensional (1-D) nanostructures from the perspective of their synthesis and unique properties, especially with respect to their excellent optical response and an ability to form heterostructures. This review discusses alternative approaches to preparation and organization of such structures, and their potential properties. In particular, molecular-scale printing is highlighted as a method for creating organized pre-cursor structure for locating nanowires, as well as vapor-liquid-solid (VLS) templated growth using nano-channel alumina (NCA), and deposition of 1-D structures with glancing angle deposition (GLAD). As regards novel optical properties, we discuss as an example, finite size photonic crystal cavity structures formed from such nanostructure arrays possessing high Q and small mode volume, and being ideal for developing future nanolasers.

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Section: Growth On Vicinal Substratesmentioning

confidence: 99%

Developing 1D nanostructure arrays for future nanophotonics

et al. 2006

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“…However, since 1990s, a simple technology for fabricating Q-wire or Q-box (Q-dot) structures directly on a substrate, involving only a growth technique has been investigated actively by many research groups, i.e., these structures can be self-assembled by adjusting the growth conditions. The straininduced lateral-layer ordering (SI-LO) of binary superlattices was used [43]- [45]. The SI self-organized (SI-SO) growth technique using the Stranski-Krastanow (SK) epitaxial growth mode has been investigated [46].…”

Section: A Various Fabrication Techniques Of Q-wire Structuresmentioning

confidence: 99%

GaInAsP/InP Quantum Wire Lasers

Arai

Minamikawa

2009

IEEE J. Select. Topics Quantum Electron.

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Abstract-Present status of GaInAsP/InP long-wavelength quantum wire lasers, fabricated by a method using electron beam exposure, dry etching, and two-step organometallic vapor-phase epitaxy, is described from aspects of low-damage interface formation and size uniformity of quantum wire structures. Even though superior lasing properties attributed to sharper gain spectrum over that of quantum well structure have not been realized yet, polarization anisotropic feature of the quantum wire structure and formation of good interfaces by this fabrication method were confirmed. Single-wavelength lasers consisting of quantum wire structure as the active and/or the passive regions have been realized as possible candidates for future integrated photonics.Index Terms-Distributed Bragg reflector (DBR) laser, distributed feedback (DFB) laser, distributed reflector (DR) laser, GaInAsP/InP, low-dimensional quantum well (QW) structure, polarization anisotropy, quantum wire laser.

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“…Wires up to ~1 µm long are found nearly parallel to [010], with the modulation direction ~8° from [100] toward [110] as before. These wires are of interest because their small cross section induces quantum confinement of electronic carriers, and they exhibit polarized optical emission and absorption[5].Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy. This work supported by Division of Materials Sciences, Office of Basic Energy Science under contract DE-AC04-94Al85000.…”

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confidence: 99%

Quantum Wire Arrays in Compositionally Modulated InAs/AlAs Superlattices

Follstaedt¹,

Reno²,

Lee³

2002

Microsc Microanal

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Compound semiconductor alloys have limited miscibility, which can lead to composition segregation during growth. This effect produces periodic lateral composition modulation in epitaxial InAs-AlAs [1] and other alloys [2]. Intense modulation is found in vertical (InAs) n /(AlAs) m superlattices (n ≈ m ≈ 2) grown by molecular beam epitaxy [3]. Growth on (001) InP substrates leads to two modulation directions with only short InAs-enriched regions (~0.1 µm) [4]. Superlattices with global-average compositions slightly rich in InAs (n > m) have modulations ~8° from the in-plane <100> directions. Growth on substrates miscut 2° toward (100) selects the modulation near [100], resulting in vertical sheets enriched in InAs and extending nearly parallel to [010] with lengths approaching ~1 µm.

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Two-dimensional array of self-assembled AlInAs quantum wires

Abstract: Formation of self-assembled quantum dots on AlInAs and GaInAs matrices using a GaSb sublayer Appl. Phys. Lett. 91, 083111 (2007); 10.1063/1.2773754 Tuning the morphology of InP self-assembled quantum structures grown on InAlP surfaces by metalorganic chemical vapor deposition

Cited by 6 publications

References 14 publications

Developing 1D nanostructure arrays for future nanophotonics

Developing 1D nanostructure arrays for future nanophotonics

GaInAsP/InP Quantum Wire Lasers

Quantum Wire Arrays in Compositionally Modulated InAs/AlAs Superlattices

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