Two Dimensional Analytical Modelling of DC IV Collapse of Drain Current in AlGaN/GaN HEMTs

Two-dimensional analytical modelling of drain current collapse in AlGaN/GaN HEMTs using multi-phonon ionisation by an electric field

“…where, ϑ (x) is the drift velocity of the electron and W G represents the gate width. The (ϑ -ε) relation [23] used in this model is given as:…”

“…where, µ is the mobility, ϑ s is the saturated velocity and ε is the electric field. The solution of the drain current [23] for the I-V characteristics can be found as:…”

“…Drain current in the linear region is calculated using (21). The condition for the onset of the saturation region [23] can be defined as…”

“…Figure 7. The channel potential variation along the channel at different V GS and V DSAT for GaN HEMT [23].…”

“…Therefore, the high field region is defined as 0 ⩽ x ′′ ⩽ (L 2 + L VG ). The channel potential has been solved in this region [23] using (7) after applying the boundary condition of [22]…”