Two-dimensional analytical model for fully depleted SOI MOSFETs with vertical trapezoid doping including effects of the interface trapped charges

Abstract

The two-dimensional (2D) potential distribution for vertical trapezoidal doping thin-body fully depleted (FD) silicon-on-insulator (SOI) devices is derived by adopting the evanescent mode analysis method, in which the 2D effects in gate oxide region, channel region and buried oxide region are taken into account. Moreover, the effects of interface trapped charge are considered. Using this potential model, the subthreshold performance of the device including subthreshold current, and subthreshold swing under various conditions have been studied. The result shows that the analytical model is good agreement with the simulated results. Therefore, it provides a feasible way of developing new 2D models for vertical trapezoidal doping thin-body FD SOI devices. Besides offering the physical insight into device physics, the analytical model provides the basic designing guidance for vertical trapezoidal doping thin-body FD SOI devices.