Two-color amorphous silicon image sensor

Mulato, Marcelo; Lemmi, F.; Ho, J.; Lau, R.; Lu, Jiawei; Street, R. A.

doi:10.1063/1.1381547

Cited by 15 publications

(9 citation statements)

References 20 publications

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“…A recent study of color sensors found exactly this effect and a detailed analysis of the relation between the series resistance and the image lag is given. 15 Furthermore, other measurements have shown the nonuniform internal field that indicates the presence of a depletion layer in the PbI 2 layers. Time-of-flight transport studies of simple films found that the response is different if the measurement is performed promptly or a longer time after the voltage is applied.…”

Section: Depletion Layer Model For Pbi 2 Charge Collectionmentioning

confidence: 99%

Comparison of PbI2 and HgI2 for direct detection active matrix x-ray image sensors

Street¹,

Ready²,

Schuylenbergh³

et al. 2002

Journal of Applied Physics

Self Cite

178

122

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Articles you may be interested inScintillator high-gain avalanche rushing photoconductor active-matrix flat panel imager: Zero-spatial frequency xray imaging properties of the solid-state SHARP sensor structure Med. Phys. 39, 7102 (2012); 10.1118/1.4760989 2 ∕ 3 in. ultrahigh-sensitivity image sensor with active-matrix high-efficiency electron emission device J. Vac. Sci. Technol. B 28, C2D11 (2010); 10.1116/1.3271163 High dynamic range active pixel sensor arrays for digital x-ray imaging using a -Si : H J. Vac. Sci. Technol. A 24, 850 (2006); 10.1116/1.2192526 X-ray detection by direct modulation of an optical probe beam-Radsensor: Progress on development for imaging applications Rev. Sci. Instrum. 75, 3995 (2004); 10.1063/1.1790055X-ray-induced recombination effects in a-Se-based x-ray photoconductors used in direct conversion x-ray sensors J.The factors determining the x-ray sensitivity of HgI 2 and PbI 2 as direct detector materials for large area matrix addressed x-ray image sensors are described, along with a model to explain their different properties. The imaging studies are made on test arrays with 512ϫ512 pixels of size 100 m. The x-ray sensitivity and spatial resolution are reported, along with measurements of the various mechanisms that influence the sensitivity, such as charge collection, x-ray absorption, fill factor, and image lag. The spatial resolution of PbI 2 decreases with increasing film thickness, but this effect is not observed in HgI 2 . The x-ray response data are used to compare the sensitivity to the theoretical values for the ionization energy and to identify the various loss mechanisms. We find that the sensitivity of HgI 2 can be explained by a few small and well characterized loss factors. This material exhibits good spatial resolution, high fill factor, and high charge collection. PbI 2 films exhibit lower sensitivity, principally attributable to a very large image lag. We propose that the x-ray response of the two materials is distinguished by their different depletion layer properties, and present a model that accounts for the sensitivity, image lag, and spatial resolution of PbI 2 .

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Section: Depletion Layer Model For Pbi 2 Charge Collectionmentioning

confidence: 99%

Comparison of PbI2 and HgI2 for direct detection active matrix x-ray image sensors

Street¹,

Ready²,

Schuylenbergh³

et al. 2002

Journal of Applied Physics

Self Cite

178

122

View full text Add to dashboard Cite

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“…The sensor exhibited peak responses at 520 and 650 nm, with "reasonably good" color separation but with excellent response linearity as a function of the incident light intensity, while the resolution of the images captured with this array exceeded 300 dpi [121,122].…”

Section: Thin Film Color Sensorsmentioning

confidence: 97%

Color Sensors and Their Applications

Puiu

2012

Springer Series on Chemical Sensors and Biosensors

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This chapter intends to provide an introduction to and a very brief summary of the principal categories of color sensors and of their applications, both relatively little known to the general public.First, an introduction describes the background of the topic(s) and the overall context. The main differences between two major but complementary techniques, colorimetry and spectrometry, will be presented here, as well as a quick summary of the scientific, technical, and industrial applications of color sensing. The second section will summarize the basic operational principles and architectures of color sensors realized in silicon. Although stand-alone detectors will also be described and discussed, the main focus will be on solid-state microsensors which can ideally be monolithically integrated together with signal processing circuits onto the same chip as "smart sensors" or intelligent microsystems. First, sensors realized only in monocrystalline silicon are summarized, followed then by those fabricated in other materials, with amorphous silicon and its alloys as the key players in this latter category.Finally, the chapter ends with the sections devoted to Conclusions and References. This chapter presents only a few of the most relevant aspects related to color sensors and examples of their practical applications. It is, in fact, an extensively abbreviated version of a much more detailed and exhaustive review dedicated to both color sensing and microspectrometry, and which is presently in preparation for future submission to Springer Verlag.

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“…The use of multilayered structures based on a-SiC:H alloys as color sensors has been an important topic of research in the field of sensing applications [1,2,3]. In these multilayered devices the light filtering is achieved through the use of different band gap materials, namely a-Si 1-x C x :H. In these devices the spectral sensitivity in the visible range is controlled by the external applied voltage.…”

Section: Introductionmentioning

confidence: 99%

Improvement in pinpin Device Architectures for Imaging Applications

Louro

Fantoni²,

Fernandes³

et al. 2008

MRS Proc.

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In this paper we present results on the optimization of device architectures for color and imaging applications, using a device with a TCO/pinpi'n'/TCO configuration. A set of different devices with different intrinsic back layers (i') are analysed.The effect of the applied voltage on the color selectivity is discussed. Results show that the spectral response curves demonstrate rather good separation between the red, green and blue basic colors. Combining the information obtained under positive and negative applied bias a color image is acquired without color filters or pixel architecture. A low level image processing algorithm is used for the color image reconstruction.

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Two-color amorphous silicon image sensor

Cited by 15 publications

References 20 publications

Comparison of PbI2 and HgI2 for direct detection active matrix x-ray image sensors

Comparison of PbI2 and HgI2 for direct detection active matrix x-ray image sensors

Color Sensors and Their Applications

Improvement in pinpin Device Architectures for Imaging Applications

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