Two-beam irradiation chamber for in situ ion-implantation and RBS at temperatures from 15 K to 300 K

Damage formation in Ge during Ar+ and He+ implantation at 15K

“…A summary of the resulting cross-sections for direct impact damage production, P, versus the melting temperature of Ar + ion implantations at 15 K into some III-V compounds found in the literature [5,[9][10][11][12][13][14] as well as for Ge and Si [14] are given in Fig. 4.…”

Damage formation in Ge during Ar+ and He+ implantation at 15K

“…A summary of the resulting cross-sections for direct impact damage production, P, versus the melting temperature of Ar + ion implantations at 15 K into some III-V compounds found in the literature [5,[9][10][11][12][13][14] as well as for Ge and Si [14] are given in Fig. 4.…”

Damage formation in Ge during Ar+ implantation at 15 K

“…A summary of the resulting cross-sections for direct impact damage production, P, versus the melting temperature of Ar + ion implantations at 15 K into some III-V compounds found in the literature [5,[11][12][13][14][15][16] as well as for Ge and Si [16] are given in Fig. 4.…”

Delayed damage accumulation by athermal suppression of defect production in concentrated solid solution alloys

“…Argon ion irradiation and in situ RBS/C analyses were both performed at 16 K in a special target chamber at the Institut für Festkörperphysik in Jena, Germany. The experimental apparatus allows both ion irradiation and subsequent ion beam analysis to be carried out without changing either the target temperature or the environment of the samples [33]. The mean projected ion range, R P , of Ar ions, based on Stopping and Range of Ions in Matter (SRIM) calculations [34], is ∼ 200 nm with a range straggling R P ∼ 60 nm.…”

Damage formation in Ge during Ar+ and He+ implantation at 15K

“…A summary of the resulting cross-sections for direct impact damage production, P, versus the melting temperature of Ar + ion implantations at 15 K into some III-V compounds found in the literature [5,[9][10][11][12][13][14] as well as for Ge and Si [14] are given in Fig. 4.…”

Damage formation in Ge during Ar+ implantation at 15 K

“…A summary of the resulting cross-sections for direct impact damage production, P, versus the melting temperature of Ar + ion implantations at 15 K into some III-V compounds found in the literature [5,[11][12][13][14][15][16] as well as for Ge and Si [16] are given in Fig. 4.…”

Delayed damage accumulation by athermal suppression of defect production in concentrated solid solution alloys

“…Argon ion irradiation and in situ RBS/C analyses were both performed at 16 K in a special target chamber at the Institut für Festkörperphysik in Jena, Germany. The experimental apparatus allows both ion irradiation and subsequent ion beam analysis to be carried out without changing either the target temperature or the environment of the samples [33]. The mean projected ion range, R P , of Ar ions, based on Stopping and Range of Ions in Matter (SRIM) calculations [34], is ∼ 200 nm with a range straggling R P ∼ 60 nm.…”

Damage formation in Ge during Ar+ and He+ implantation at 15K

“…A summary of the resulting cross-sections for direct impact damage production, P, versus the melting temperature of Ar + ion implantations at 15 K into some III-V compounds found in the literature [5,[9][10][11][12][13][14] as well as for Ge and Si [14] are given in Fig. 4.…”

Damage formation in Ge during Ar+ implantation at 15 K

“…A summary of the resulting cross-sections for direct impact damage production, P, versus the melting temperature of Ar + ion implantations at 15 K into some III-V compounds found in the literature [5,[11][12][13][14][15][16] as well as for Ge and Si [16] are given in Fig. 4.…”

Delayed damage accumulation by athermal suppression of defect production in concentrated solid solution alloys

“…Argon ion irradiation and in situ RBS/C analyses were both performed at 16 K in a special target chamber at the Institut für Festkörperphysik in Jena, Germany. The experimental apparatus allows both ion irradiation and subsequent ion beam analysis to be carried out without changing either the target temperature or the environment of the samples [33]. The mean projected ion range, R P , of Ar ions, based on Stopping and Range of Ions in Matter (SRIM) calculations [34], is ∼ 200 nm with a range straggling R P ∼ 60 nm.…”