Two-beam irradiation chamber for in situ ion-implantation and RBS at temperatures from 15 K to 300 K

Breeger, B; Wendler, E.; Trippensee, W.; Schubert, C.; Wesch, W.

doi:10.1016/s0168-583x(00)00433-x

Cited by 60 publications

(24 citation statements)

References 9 publications

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“…After each implantation step immediate defect analysis was performed using Rutherford backscattering spectrometry (RBS) in a channelling configuration with 1.4 MeV He ions and a backscattering angle of 170°. The experiments done in a special target chamber at the Institut für Festkörperphysik in Jena, allow for implantation and subsequent ion beam analysis without changing the target temperature or the environment of the sample [7].…”

Section: Experimental Conditionsmentioning

confidence: 99%

Radiation damage in ZnO ion implanted at 15K

Wendler

Bilani

Gärtner

et al. 2009

Nuclear Instruments and Methods in Physics Research Section B:

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a b s t r a c tCommercial O-face (0 0 0 1) ZnO single crystals were implanted with 200 keV Ar ions. The ion fluences applied cover a wide range from 5 Â 10 11 to 7 Â 10 16 cm À2 . The implantation and the subsequent damage analysis by Rutherford backscattering spectrometry (RBS) in channelling geometry were performed in a special target chamber at 15 K without changing the target temperature of the sample. To analyse the measured channelling spectra the computer code DICADA was used to calculate the relative concentration of displaced lattice atoms.Four stages of the damage evolution can be identified. At low ion fluences up to about 2 Â 10 13 cm À2 the defect concentration increases nearly linearly with rising fluence (stage I). There are strong indications that only point defects are produced, the absolute concentration of which is reasonably given by SRIM calculations using displacement energies of E d (Zn) = 65 eV and E d (O) = 50 eV. In a second stage the defect concentration remains almost constant at a value of about 0.02, which can be interpreted by a balance between production and recombination of point defects. For ion fluences around 5 Â 10 15 cm À2 a second significant increase of the defect concentration is observed (stage III). Within stage IV at fluences above 10 16 cm À2 the defect concentration tends again to saturate at a level of about 0.5 which is well below amorphisation. Within stages III and IV the damage formation is strongly governed by the implanted ions and it is appropriate to conclude that the damage consists of a mixture of point defects and dislocation loops.

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Section: Experimental Conditionsmentioning

confidence: 99%

Radiation damage in ZnO ion implanted at 15K

Wendler

Bilani

Gärtner

et al. 2009

Nuclear Instruments and Methods in Physics Research Section B:

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“…A summary of the resulting cross-sections for direct impact damage production, P, versus the melting temperature of Ar + ion implantations at 15 K into some III-V compounds found in the literature [5,[9][10][11][12][13][14] as well as for Ge and Si [14] are given in Fig. 4.…”

Section: Resultsmentioning

confidence: 99%

“…In order to study purely ion-induced effects during implantation of materials, thermal influences have to be suppressed by reducing the target temperature and by preventing sample heating between implantation and measurement. The laboratory at the Friedrich-Schiller-Universität in Jena has a special target chamber which fulfils these conditions [5]. The aim of this investigation is thus to gain understanding in the primary mechanisms of damage formation during Ar + and He + ion irradiation of different orientations of Ge.…”

Section: Introductionmentioning

confidence: 99%

Damage formation in Ge during Ar+ and He+ implantation at 15K

Hayes

Schroeter

Wendler

et al. 2009

Physica B: Condensed Matter

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a b s t r a c tAr + and He + ions were implanted into Ge samples with (1 0 0), (11 0), (111) and (11 2) orientations at 15 K with fluences ranging from 1 Â10 11 to 1 Â10 14 cm À 2 for the Ar + ions and fluences ranging from 1 Â10 12 to 6 Â 10 15 cm À 2 for the He + ions. The Rutherford backscattering (RBS) technique in the channelling orientation was used to study the damage built-up in situ. Implantation and RBS measurements were performed without changing the target temperature. The samples were mounted on a four axis goniometer cooled by a close cycle He cryostat. The implantations were performed with the surface being tilt 71 off the ion beam direction to prevent channelling effects. After each 300 keV Ar + and 40 keV He + implantation, RBS analysis was performed with 1.4 MeV He + ions.For both the implantation ions, there is about no difference between the values found for the damage efficiency per ion for the four different orientations. This together with the high value (around 5 times higher than that found in Si), gives rise to the assumption of amorphous pocket formation per incident ion, i.e. direct impact amorphization, already at low implantation fluences. At higher fluences, when collision cascades overlap, there is a growth of the already amorphized regions.

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“…Ion implantations were performed at 15 K in a special target chamber at the Institut für Festkörperphysik in Jena, where in situ RBS/C measurements allow monitoring the defect accumulation without changing the target temperature (Breeger et al, 2001). A schematic of the set-up is shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

“…2. Schematic representation of the two-beam chamber used for the low temperature in situ RBS/C measurements (Breeger et al, 2001). …”

Section: Methodsmentioning

confidence: 99%