Two-band k·p model for the conduction band in silicon: Impact of strain and confinement on band structure and mobility

Sverdlov, Viktor; Karlowatz, G.; Dhar, Siddhartha; Kosina, H.; Selberherr, S.

doi:10.1016/j.sse.2008.06.019

Cited by 33 publications

(21 citation statements)

References 19 publications

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“…Under shear stress, the degeneracy of the Δ1 and Δ2' bands at X is eliminated. The two bands couple with each other, changing the dispersion relationship of the conduction band and the valley minimum [10]. In order to apply this model to different valleys of conduction band, we introduce the conversion operator T v .…”

Section: The Modelmentioning

confidence: 99%

“…, the parameter M can be obtained by the empirical pseudo-potential method [10]. The band division of Δ 1 and Δ 2' at the X point under the action of shear stress leads to a change in the valley minimum.…”

Section: Energy Band Modelmentioning

confidence: 99%

“…In fact, under the action of shear stress, not only does the structure of the conduction band change, but also the minimum value of the valley and the effective mass along the stress direction. Sverdlov and Dhar et al [10] [11] [12], based on the two-band k•p theory proposed by Hensel [13], thoroughly analyzed the effect of shear stress on the effective mass in the [110] direction. However, the above-mentioned articles only studied a specific crystal orientation, while the main structure parameters of the energy band under arbitrary uniaxial stress, as well as the different valleys, were not explicitly given.…”

Section: Introductionmentioning

confidence: 99%

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Modelling and Calculation of Silicon Conduction Band Structure and Parameters with Arbitrary Uniaxial Stress

Wang¹,

Yu²,

Zhou³

2018

JAMP

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Using the k•p theory, the coupling effect between the Δ1 and Δ2' bands on the energy band structure of different energy valleys is studied. The analytical model of the energy-dispersion relationship applicable to uniaxial stress for arbitrary crystal plane and orientation as well as different energy valleys is established. For typical crystal orientations, the main parameters of energy band structure such as band edge level, splitting energy, density-of-state (DOS) effective mass and conductivity effective mass are calculated. The calculated results are in good agreement with the data reported in related literature. Finally, the relationship between the DOS effective mass, conductivity effective mass and the change of stress and orientation of different crystal planes is given. The proposed model and calculation results can provide a theoretical reference for the design of nano-electronic devices and TCAD simulation.

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Section: The Modelmentioning

confidence: 99%

Section: Energy Band Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Modelling and Calculation of Silicon Conduction Band Structure and Parameters with Arbitrary Uniaxial Stress

Wang¹,

Yu²,

Zhou³

2018

JAMP

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“…In the case of a square potential well with infinite walls, which is a good approximation for the confining potential in ultra-thin films, the subband structure can be obtained analytically [50]. This allows for an analysis of subband energies, effective masses, nonparabolicity, and the low-field mobility on film thickness for arbitrary stress conditions.…”

Section: Challenges Of N-channel Mosfet Modelingmentioning

confidence: 99%

Modeling of modern MOSFETs with strain

et al. 2009

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We review modeling techniques used to compute strain induced performance enhancement of modern MOSFETs. While p-channel MOSFETs were intensively studied, electron transport in strained structures received surprisingly little attention. A rigorous analysis of the subband structure in thin silicon films under stress is performed. Calculated subband effective masses are shown to strongly depend on shear strain and film thickness. A decrease of the transport effective mass under tensile stress in [110] direction and an additional splitting between the unprimed subbands with the same quantum number guarantees a mobility enhancement even in ultra-thin (001) silicon films. This increase of mobility and drive current combined with the improved channel control makes multi-gate MOSFETs based on thin films or silicon fins preeminent candidates for the 22 nm technology node and beyond.Keywords MOSFETs modeling · Shear strain · Two-band k·p model for conduction band · Valley splitting · Mobility and current enhancement

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“…In our work, the change of the hole effective mass and its effect on hole mobility under the lower strain were investigated. The paper studies the valence band structure of the in-plane biaxially tensile strained silicon based on (0 0 1) substrate and longitudinal uniaxially compressive strained silicon along h1 1 0i using KÁP model [12]. The relationship of density of state (DOS) effective mass, conductivity effective mass and band splitting energy is presented.…”

Section: Introductionmentioning

confidence: 99%

Modeling of enhancement factor of hole mobility for strained silicon under low stress intensity

Liu

Wang

2011

Microelectronics Reliability

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Two-band k·p model for the conduction band in silicon: Impact of strain and confinement on band structure and mobility

Cited by 33 publications

References 19 publications

Modelling and Calculation of Silicon Conduction Band Structure and Parameters with Arbitrary Uniaxial Stress

Modelling and Calculation of Silicon Conduction Band Structure and Parameters with Arbitrary Uniaxial Stress

Modeling of modern MOSFETs with strain

Modeling of enhancement factor of hole mobility for strained silicon under low stress intensity

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