TwinMag II: Improving an advanced sputtering tool

Heister, U; Krempel-Hesse, J; Szczyrbowski, J.; Teschner, G.; Bruch, John C.; Bräuer, Günter

doi:10.1016/s0042-207x(00)00297-9

Cited by 15 publications

(6 citation statements)

References 3 publications

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“…Symmetric bipolar or mid-frequency alternating current (ac) waveforms are sometimes applied for the reactive deposition of oxide coatings from two targets (Este and Westwood 1988, Heister et al 2000, Scherer et al 1992. Both waveforms use a voltage reversal at the cathode to offset charge build up on the target surface.…”

Section: Symmetric Bipolar/mid-frequency Ac Magnetron Sputteringmentioning

confidence: 99%

Physics and technology of magnetron sputtering discharges

Guðmundsson

2020

Plasma Sources Sci. Technol.

336

219

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Magnetron sputtering deposition has become the most widely used technique for deposition of both metallic and compound thin films and is utilized in numerous industrial applications. There has been a continuous development of the magnetron sputtering technology to improve target utilization, increase ionization of the sputtered species, increase deposition rates, and to minimize electrical instabilities such as arcs, as well as to reduce operating cost. The development from the direct current (dc) diode sputter tool to the magnetron sputtering discharge is discussed as well as the various magnetron sputtering discharge configurations. The magnetron sputtering discharge is either operated as a dc or radio frequency discharge, or it is driven by some other periodic waveforms depending on the application. This includes reactive magnetron sputtering which exhibits hysteresis and is often operated with an asymmetric bipolar mid-frequency pulsed waveform. Due to target poisoning the reactive sputter process is inherently unstable and exhibits a strongly non-linear response to variations in operating parameters. Ionized physical vapor deposition was initially achieved by adding a secondary discharge between the cathode target and the substrate and later by applying high power pulses to the cathode target. An overview is given of the operating parameters, the discharge properties and the plasma parameters including particle densities, discharge current composition, electron and ion energy distributions, deposition rate, and ionized flux fraction. The discharge maintenance is discussed including the electron heating processes, the creation and role of secondary electrons and Ohmic heating, and the sputter processes. Furthermore, the role and appearance of instabilities in the discharge operation is discussed.

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Section: Symmetric Bipolar/mid-frequency Ac Magnetron Sputteringmentioning

confidence: 99%

Physics and technology of magnetron sputtering discharges

Guðmundsson

2020

Plasma Sources Sci. Technol.

336

219

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“…The waveforms of both the targets will be reversed from cathode to anode simultaneously, one after the other, to eliminate the charge built up on the target surface. [ 41,42 ] A symmetric bipolar pulse generator connects to the two targets arranged side by side. One lead from the power source connects to the first target, and the other lead supplies power to the second target.…”

Section: Sputteringmentioning

confidence: 99%

Magnetron Sputtered Thin Films Based on Transition Metal Nitride: Structure and Properties

Bharani

Sharma

2022

Physica Status Solidi (a)

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Transition metal nitride (TMN) thin films exhibit outstanding physical, chemical, and mechanical properties, making them best suitable for a wide variety of applications. The most commonly used technique to produce metal nitride thin films with specific properties at optimum conditions is magnetron sputtering. Considering this, this review begins with advancements in the sputtering process from basic diode sputtering to the most commonly used pulsed magnetron sputtering. Further, the literature on several TMNs deposited via magnetron sputtering is summarized, referring to several articles that have been published during the last decades. The main emphasis lies on nitride-based thin films' structural, morphological, and mechanical aspects for various applications. In addition, the influence of reactive gas flow rate, substrate temperature, layer thickness, postannealing temperature, substrate bias voltage, protective layers, the sputtering technique adopted, etc. on the quality and performance of the thin films is also focused. The overall review work can be beneficial for the students and researchers in understanding the basic sputtering phenomenon with its advancements, the relationship between deposition parameters and surface properties, and to know the current research trend for exploring several research gaps in the literature.

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“…For example, in one technique, the reactive gas flow rate or the sputtering voltage are controlled in real time while monitoring the plasma emission intensity or the target voltage to keep the target state in the transition region between the metallic and compound target modes. [5][6][7] Another technique involves forming oxide thin films by depositing a very thin metal film and then oxidizing it in an oxidizing atmosphere repeatedly. [8][9][10][11] Other groups have carried out sputtering under relatively high pressure, and the sputtered particles are transported to the substrate by the forced flow of gas.…”

Section: Introductionmentioning

confidence: 99%

Metallic-mode reactive sputtering of nickel oxide thin films and characterization of their electrochromic properties

Yokoiwa¹,

Abe²,

Kawamura³

et al. 2019

Jpn. J. Appl. Phys.

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Nickel oxide is a promising electrochromic (EC) material, and it is a material that changes color upon undergoing electrochemical oxidation and reduction. In this study, we prepared nickel oxide thin films by sputtering a nickel metal target using water vapor (H2O) as a reactive gas, and investigated the effects of substrate cooling and water vapor flow ratio in the atmosphere of argon (Ar) gas, RH2O = H2O/(Ar + H2O). High and constant target voltage and plasma emission peaks of Ni atoms were obtained up to RH2O = 75% at ‒80 °C, indicating that the Ni target maintained a metallic state. The deposition rate increased with increasing RH2O when the substrates were cooled, and a maximum deposition rate of 34.6 nm min−1 was obtained at RH2O = 50%. The nickel oxide thin films that were formed in the metallic target mode showed high transmittance in the as-deposited state and good EC properties.

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TwinMag II: Improving an advanced sputtering tool

Cited by 15 publications

References 3 publications

Physics and technology of magnetron sputtering discharges

Physics and technology of magnetron sputtering discharges

Magnetron Sputtered Thin Films Based on Transition Metal Nitride: Structure and Properties

Metallic-mode reactive sputtering of nickel oxide thin films and characterization of their electrochromic properties

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