Twin-free (Cd, Mn)Te substrates

Triboulet, R.; Heurtel, A.; Rioux, J.

doi:10.1016/0022-0248(90)90951-g

Cited by 72 publications

(39 citation statements)

References 5 publications

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“…The complete pseudo-binary CdTe-MnTe phase diagram was drawn up by Triboulet [2], which shows a solid-state transition from a high-temperature phase to the low-temperature zincblende one. The hightemperature wurtzite structure phase has not been unambiguously identified.…”

Section: Resultsmentioning

confidence: 99%

“…Compared to Cd 1-x Zn x Te, Cd 1-x Mn x Te has several advantages. Since the segregation coefficient of Mn during crystal growth of Cd 1-x Mn x Te is close to unit [2,6], more homogeneous crystals can be grown from melt. The bandgap of Cd 1-x Mn x Te has greater tunability due to the large compositional influence of Mn [7].…”

Section: Introductionmentioning

confidence: 99%

“…Previous work by Triboulet et al [2] has shown that Cd 1-x Mn x Te could be used as substrates for the epitaxial growth of Hg 1-x Cd x Te and Hg 1-x Zn x Te, due to its chemical and structural compatibility. More recently, Cd 1-x Mn x Te was demonstrated to be a good candidate to compete with Cd 1-x Zn x Te in X-ray and γ-ray detectors [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

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Twins in CdMnTe single crystals grown by Bridgman method

Zhang¹,

Wang

et al. 2009

Cryst. Res. Technol.

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Cd 1-x Mn x Te (x=0.2, CdMnTe) crystal was grown by the vertical Bridgman method, which exhibits a pure zincblende structure in the whole ingot. The major defect, twins, which is fatal to CdMnTe crystal, was analyzed with scanning electron microscopy (SEM), X-ray energy disperse spectroscopy (XEDS) and optic microscopy on the chemical etching surface. The twins observed in the as-grown ingot are mainly lamellar ones, which lie on the {111} faces from the first-to-freeze region of the ingot and run parallel to the growth axis of the ingot. Coherent twins with {115} t -{111} h orientations when indexed with respect to both the twin and host orientations, are often found to be terminated by {110} t -{114} h lateral twins. Te inclusions with about 20 µm in width are observed to preferentially decorate the lamellar twin boundaries. The origin of the twins, relating to the growth twin and the phase transformation twin, is also discussed in this paper.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Twins in CdMnTe single crystals grown by Bridgman method

Zhang¹,

Wang

et al. 2009

Cryst. Res. Technol.

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“…Owing to its unique magnetic and magnetooptic properties [1], Cd 1−x Mn x Te crystals can be used in many device applications [2] and offer several potential advantages over Cd 1−x Zn x Te as a material for room-temperature X-and gamma-ray detectors [3,4]. The band gap range 1.7 eV to 2.2 eV, required for substantiating an "ideal" radiation detector performance, can be realized with a relatively low (< 50%) amount of Mn compared with that of Zn in Cd 1−x Zn x Te (up to 70%) [4].…”

Section: Introductionmentioning

confidence: 99%

Self-Compensation Mechanism in Semi-Insulating CdMnTe Crystals Intended for X/γ-Ray Detectors

Yurtsenyuk¹,

Kosyachenko²,

Sklyarchuk³

et al. 2011

Acta Phys. Pol. A

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The electrical properties of single Cd 1−x Mn x Te (x = 0.07-0.39) crystals with a resistivity of ≈ 108 Ω cm at 300 K have been studied. The electrical conductivity is explained in the terms of statistics of electrons and holes in a semiconductor taking into account the compensation process in impurity-defect complexes. The energy of ionization and the degree of compensation levels have been found.

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“…Owing to its unique magnetic and magneto-optic properties [1], Cd 1-x Mn x Te crystals can be used in many device applications, such as Faraday rotators, optical isolators, solar cells, magnetic field sensors and substrates for the epitaxial growth of Hg 1-x Cd x Te and Hg 1-x Zn x Te due to its chemical and structural compatibility [2]. More recently, Cd 1-x Mn x Te offers several potential advantages over Cd 1-x Mn x Te as a material for room-temperature X-and gamma-ray detectors [3,4] that are widely used in science, medicine, industry, environment monitoring and other fields.…”

Section: Introductionmentioning

confidence: 99%

Energy band gap and electrical conductivity of Cd1–xMnxTe alloys with different manganese content

Kosyachenko¹

2011

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The optical and electrical properties of single Cd 1-x Mn x Te (x = 0.07 -0.40) crystals with p-type conduction and resistivity 10 4 -10 8 Ohm⋅cm have been studied. The band gaps of the samples and their temperature dependences have been determined. The electrical conductivity of this material and its temperature variation are explained in terms of statistics for electrons and holes in semiconductor with taking into account the compensation process. The energy of ionization and degree of compensation levels responsible for the electrical conductivity of the samples have been found.

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Twin-free (Cd, Mn)Te substrates

Cited by 72 publications

References 5 publications

Twins in CdMnTe single crystals grown by Bridgman method

Twins in CdMnTe single crystals grown by Bridgman method

Self-Compensation Mechanism in Semi-Insulating CdMnTe Crystals Intended for X/γ-Ray Detectors

Energy band gap and electrical conductivity of Cd1–xMnxTe alloys with different manganese content

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