Tutorial on narrow linewidth tunable semiconductor lasers using Si/III-V heterogeneous integration

Tran, Minh A.; Huang, Duanni; Bowers, John E.

doi:10.1063/1.5124254

Cited by 190 publications

(115 citation statements)

References 104 publications

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“…Spiral resonators with increased modal volume can suppress low-offset frequency noise induced by thermodynamic fluctuations 49 . Finally, heterogeneous integration of III-V lasers and ultra-high-Q microresonators may eventually unite the device onto a single chip 30,45,50 , leading to scalable production with high yield using foundry-based technologies.…”

Section: Discussionmentioning

confidence: 99%

“…While sub-Hertz fundamental linewidth has been realized in semiconductor lasers that are self-injection-locked to discrete crystalline microresonators 17 , retaining ultra-high Q factor when moving to higher levels of integration is both of paramount importance and challenging. As a measure of the level of difficulty, current demonstrations of narrowlinewidth integrated lasers, despite many years of effort, feature fundamental linewidths of 40 Hz to 1 kHz, as limited by their Q factors [27][28][29][30] .…”

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confidence: 99%

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Hertz-linewidth semiconductor lasers using CMOS-ready ultra-high-Q microresonators

et al. 2021

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Driven by narrow-linewidth bench-top lasers, coherent optical systems spanning optical communications, metrology and sensing provide unrivalled performance. To transfer these capabilities from the laboratory to the real world, a key missing ingredient is a mass-produced integrated laser with superior coherence. Here, we bridge conventional semiconductor lasers and coherent optical systems using CMOS-foundry-fabricated microresonators with record high Q factor over 260 million and finesse over 42,000. Five orders-of-magnitude noise reduction in the pump laser is demonstrated, and for the first time, fundamental noise below 1 Hz 2 Hz −1 is achieved in an electrically-pumped integrated laser. Moreover, the same configuration is shown to relieve dispersion requirements for microcomb generation that have handicapped certain nonlinear platforms. The simultaneous realization of record-high Q factor, highly coherent lasers and frequency combs using foundry-based technologies paves the way for volume manufacturing of a wide range of coherent optical systems.

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Section: Discussionmentioning

confidence: 99%

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confidence: 99%

Hertz-linewidth semiconductor lasers using CMOS-ready ultra-high-Q microresonators

et al. 2021

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“…In the past decade, a linewidth reduction of four orders of magnitude is achieved on hybrid and heterogeneous platforms. Hence, the linewidth of heterogeneously integrated and hybrid integrated lasers can reach a better target than traditional monolithic III–V semiconductor lasers, approaching sub-kHz levels [ 78 ]. For example, a heterogeneous III–V/Si laser configuration containing long low-loss Bragg gratings improves the lasing stability and on-chip power up to 37 mW and a low linewidth of 1 kHz was demonstrated, although it had little wavelength tunability [ 79 ].…”

Section: Silicon Photonics For Thz Techniquesmentioning

confidence: 99%

A Review on Terahertz Technologies Accelerated by Silicon Photonics

Xie

Zhou

et al. 2021

Nanomaterials

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In the last couple of decades, terahertz (THz) technologies, which lie in the frequency gap between the infrared and microwaves, have been greatly enhanced and investigated due to possible opportunities in a plethora of THz applications, such as imaging, security, and wireless communications. Photonics has led the way to the generation, modulation, and detection of THz waves such as the photomixing technique. In tandem with these investigations, researchers have been exploring ways to use silicon photonics technologies for THz applications to leverage the cost-effective large-scale fabrication and integration opportunities that it would enable. Although silicon photonics has enabled the implementation of a large number of optical components for practical use, for THz integrated systems, we still face several challenges associated with high-quality hybrid silicon lasers, conversion efficiency, device integration, and fabrication. This paper provides an overview of recent progress in THz technologies based on silicon photonics or hybrid silicon photonics, including THz generation, detection, phase modulation, intensity modulation, and passive components. As silicon-based electronic and photonic circuits are further approaching THz frequencies, one single chip with electronics, photonics, and THz functions seems inevitable, resulting in the ultimate dream of a THz electronic–photonic integrated circuit.

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“…The laser design for hybrid integrated lasers has been extensively reported [12][13][14][15]. In this section a brief summary of the basic design rules and ideas is provided.…”

Section: Laser Designmentioning

confidence: 99%

Hybrid integrated silicon nitride lasers

Epping

Leinse

Oldenbeuving

et al. 2020

Physics and Simulation of Optoelectronic Devices XXVIII

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Ultra-narrow linewidth tunable hybrid integrated lasers are built from a combination of indium phosphide (InP) and silicon nitride-based TriPleX™. By combining the active functionality of InP with the ultra-low loss properties of the TriPleX™ platform narrow linewidth lasers in the C-band are realized. The InP platform is used for light generation and the TriPleX™ platform is used to define a long cavity with a wavelength-selective tunable filter. The TriPleX™ platform has the ability to adapt mode profiles over the chip and is extremely suitable for mode matching to the other platforms for hybrid integration. The tunable filter is based on a Vernier of micro-ring resonators to allow for single-mode operation, tunable by thermo-optic or stress-induced tuning. This work will show the operational principle and benefits of the hybrid lasers and the state of the art developments in the realization of these lasers. High optical powers (>100 mW) are combined with narrow linewidth (< 1 kHz) spectral responses with tunability over a large (>100 nm) wavelength range and a low relative intensity (<-160 dB/Hz).

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Tutorial on narrow linewidth tunable semiconductor lasers using Si/III-V heterogeneous integration

Cited by 190 publications

References 104 publications

Hertz-linewidth semiconductor lasers using CMOS-ready ultra-high-Q microresonators

Hertz-linewidth semiconductor lasers using CMOS-ready ultra-high-Q microresonators

A Review on Terahertz Technologies Accelerated by Silicon Photonics

Hybrid integrated silicon nitride lasers

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