Turn-Off Delay Compensation of Series-Connected IGBTs for HVDC Applications

Briff, Pablo; Chivite-Zabalza, Javier; Nicholls, J.; Vershinin, K.

doi:10.1109/tpel.2020.2983874

Cited by 12 publications

(4 citation statements)

References 9 publications

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“…Therefore, the voltage of the IGBTs will be unbalanced. If an IGBT have a time delay of ∆𝑡 𝑑𝑒𝑙𝑎𝑦 in the turn-on or in the turn-off transition, the overvoltage (∆𝑉 𝑀𝑎𝑥 ) of the IGBT can be obtained by (5).…”

Section: Desining the Key Componentsmentioning

confidence: 99%

An Energy Recovery Scheme for RCD Snubber in the Series Configuration of IGBTs

Zarghani

Peyghami

Iannuzzo

et al. 2021

2021 IEEE Energy Conversion Congress and Exposition (ECCE)

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This paper presents an energy recovery scheme for traditional Resistor-Capacitor-Diode (RCD) snubber in the series-connected configuration of IGBTs. In the series configuration of IGBTs, an RCD snubber is used in parallel to each IGBT to provide a safe operating condition for the IGBTs. In the proposed scheme, by using interconnection diodes, the capacitors of the snubbers are parallelized in the on-state of the IGBTs. Thus, the stored energies in the snubber capacitors are lumped together and transferred to the DC link by using a transformer and a resonant circuit. By using of the proposed method, the capacitor of the snubber can have a higher value. Higher value of the snubber capacitance improve voltage sharing of the IGBTs and reduce the turn-off switching power losses of the IGBTs. The proposed scheme is simulated for a case study using PSPICE software and tested through an experimental setup. Simulation and experimental results imply the proper performance of the proposed scheme.

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Section: Desining the Key Componentsmentioning

confidence: 99%

An Energy Recovery Scheme for RCD Snubber in the Series Configuration of IGBTs

Zarghani

Peyghami

Iannuzzo

et al. 2021

2021 IEEE Energy Conversion Congress and Exposition (ECCE)

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“…As examples, strategies to compensate for voltage differences among series devices (IGBTs and SiC MOSFETs, respectively) are proposed in [13] and [14], where a turn-off delay compensation is introduced by the controller for this purpose. In [15] and [16] a similar problem is mitigated with suitable control algorithms of the series IGBTs in a director switch.…”

Section: Introductionmentioning

confidence: 99%

Development and Validation of a Smart Architecture for Thyristor Valves

Sala

Bonis²,

Costabeber

et al. 2023

IEEE J. Emerg. Sel. Topics Power Electron.

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A high voltage thyristor converter is realized by many valve sections, whose volume is approximately occupied for only the 10% by thyristors and for the 10% by the relevant gate drivers. The remaining 80% is taken by passive auxiliary circuits, needed to protect thyristors during turn-on and turn-off commutations. This work represents a preliminary validation of an innovative architecture that aims to reduce the auxiliary circuit cost, volume, and weight of the overall valve, through the investigation of active, instead of passive solutions. The work starts from investigation of the phenomena behind the valve transient behaviors and proceeds with simulations and experimental tests, using a reduced scale circuit prototype. The match between the obtained results validates the investigated active configurations, confirming that the proposed solution can be used for improving thyristor valves.

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“…The same algorithm as in the previous has been followed in [16] but a voltage control scheme is proposed which uses by-pass gate turn-off transistor (GTO) valves the other one operating as a conventional bridge. GTO thyristor valve sections that has been used may be replaced by thyristors with forcedcommutation circuitry in [17]. The use of a modified three-phase bridge converter which uses GTO thyristors as by-pass valves is suggested in [18] and [19].…”

Section: Introductionmentioning

confidence: 99%

Performance analysis of multi-level high voltage direct current converter

Shahin¹,

Al-Majali

2022

IJECE

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<p class="Abstract">The conventional three-phase alternating current (AC) to direct current (DC) converter can be modified using two isolated-gate bipolar transistor (IGBT) as by-pass switches connected to tapping points on the secondary side of the transformer. This scheme yields a reduction in both harmonic contents and reactive volt-ampere absorption. This modified converter possibly eliminates the need for an on-load tap-changer on the converter transformer. The modified AC/DC converter is fully analyzed and implemented under balanced conditions using MATLAB-Simulink. The expressions of the output DC voltage are derived for different cases. The supply current harmonic contents, the reactive power absorption and the power factor have been compared for three schemes; the conventional bridge, the modified bridge using one by-pass IGBT valve and the modified bridge with two by-pass IGBT valves. </p>

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Turn-Off Delay Compensation of Series-Connected IGBTs for HVDC Applications

Cited by 12 publications

References 9 publications

An Energy Recovery Scheme for RCD Snubber in the Series Configuration of IGBTs

An Energy Recovery Scheme for RCD Snubber in the Series Configuration of IGBTs

Development and Validation of a Smart Architecture for Thyristor Valves

Performance analysis of multi-level high voltage direct current converter

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