Tunneling time correction to the intersubband optical absorption in a THz laser-dressed GaAs/Al x Ga1- x As quantum well

Niculescu, E.C.; Radu, A.

doi:10.1140/epjb/e2011-10707-0

Cited by 24 publications

(5 citation statements)

References 33 publications

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“…It should be recalled that for any finite barrier potential well under the action of an electric field there is no veritable electron bound state. Every energy level associated with a quantum state has a non-zero linewidth correlated with the mean time of tunneling out of the biased structure [46]. As the static electric field increases, the electron energies descend (quantum confined Stark effect), the tunneling time of a given state becomes smaller and the energy linewidth of the level augments [47].…”

Section: Resultsmentioning

confidence: 99%

“…However, this could be a real theoretical problem only for highly excited states which will become unsteady at high enough values of the electric field. The lower electronic states are quasi-bound since the associated tunneling time is much longer than any characteristic time involved in the intraband or interband transitions [46]. In this work we will not discuss this issue in more details but we will further establish a simple criterion for considering an excited state as being 'quasi-bound'.…”

Section: Resultsmentioning

confidence: 99%

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The effects of the intense laser and homogeneous electric fields on the electronic and intraband optical properties of a GaAs/Ga_0.7Al_0.3As quantum ring

Radu

Kirakosyan

Laroze

et al. 2015

Semicond. Sci. Technol.

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The simultaneous influences of an intense laser field and static electric field on one-electron states and intraband optical absorption coefficient are investigated in two-dimensional GaAs/Ga 0.7 Al 0.3 As quantum ring. An analytical expression of the effective confining potential in the presence of the external fields is obtained. The one-electron energy levels and wave functions are calculated using the effective mass approximation and an exact diagonalization technique. We show that changes in the incident light polarization lead to blue-or redshifts in the intraband optical absorption spectrum. Moreover, we found that blueshift and redshift are induced by the simultaneous influences of an intense laser and lateral electric fields. The obtained theoretical results indicate a novel opportunity to tune the performance of quantum rings and to control their specific properties by means of intense laser and homogeneous electric fields.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

The effects of the intense laser and homogeneous electric fields on the electronic and intraband optical properties of a GaAs/Ga_0.7Al_0.3As quantum ring

Radu

Kirakosyan

Laroze

et al. 2015

Semicond. Sci. Technol.

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“…Electrically charged particles will be considered under the simultaneous actions of a constant EF F = u f F and a non-resonant LF of amplitude A = u p A of the vector magnetic potential, where the unit vectors u f and u p correspond to the EF direction and the LF polarization, respectively. If the values of the applied static EF are not too high, the quantum Stark effect can be studied in the approximation of quasi-bound states, with the energy eigenvalues and related state functions having quasi-zero imaginary parts [22,23]. It is also known that for sufficiently large values of angular frequency ω of the laser wave, the quantum states of the confined particles are quasi-stationary and can be calculated using a modified a temporal form of the Schrödinger equation [24]:…”

Section: Theorymentioning

confidence: 99%

Finite element 3D model of a double quantum ring: effects of electric and laser fields on the interband transition

Radu,

Stan,

Bejan

2023

New J. Phys.

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In this work, the changes in the energy of electrons and holes, oscillator strength and interband transition time when external fields are applied to a GaAs/AlGaAs semiconductor double ring grown by the droplet epitaxy technique are theoretically analyzed. We consider a static electric field and an intense laser field nonresonant with the quantum structure, with variable intensities and orientations with respect to the symmetry axis of the quantum ring (QR). In the formalism of the effective mass approximation for electrons and holes, the energies and wavefunctions were numerically computed using the finite element method implemented with an accurate three-dimensional model of the real QR. Laser dressing of the confining potential was performed using the exact integration formula at each point. Our results show major differences between the effects of the two types of applied fields, caused mainly by the static electric-field-induced strong polarizability of the confined electron-hole pair. In addition, the effects of both fields exhibit strong anisotropy in the electronic properties as a result of the particular flattened geometry of the QR. Proper combinations of field strengths and orientations are helpful in designing accurate tools for the sensitive manipulation of interband radiative properties.

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“…The possibility of the generation of the THz radiation in resonant tunneling structures with several quantum wells was discussed in [17]. Moreover, it is claimed in [18] that the combined effects of the static electric field and the THz coherent radiation field can be useful in designing new optoelectronic devices.…”

Section:  mentioning

confidence: 99%

Thz Radiation under Tunneling in Asymmetric Double Quatum Wells

Mengesha¹,

Koshvaya²,

Malnev³

2011

JEMAA

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The asymmetric parabolic double quantum wells (DQWs) with resonant levels (the ground state energy in one well co-incides with the first excited state energy in another well) is analyzed. The splitting of these levels and the tunneling times are calculated. If the typical life time of the excited state is much smaller than the tunneling time between wells, the charged particle can radiate as a result of the quantum transition from the excited state to the ground state. In the opposite case, the asymmetric DQWs can be treated as a metastable excited nanosystem regardless of that the dipole transition from the excited state to ground state is permitted. The lifetime of this metastable state can be considerably reduced by putting it into a resonant cavity. The possibility of coherent radiation of an ensemble of asymmetric DQWS is discussed

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Tunneling time correction to the intersubband optical absorption in a THz laser-dressed GaAs/Al x Ga1- x As quantum well

Cited by 24 publications

References 33 publications

The effects of the intense laser and homogeneous electric fields on the electronic and intraband optical properties of a GaAs/Ga_0.7Al_0.3As quantum ring

The effects of the intense laser and homogeneous electric fields on the electronic and intraband optical properties of a GaAs/Ga_0.7Al_0.3As quantum ring

Finite element 3D model of a double quantum ring: effects of electric and laser fields on the interband transition

Thz Radiation under Tunneling in Asymmetric Double Quatum Wells

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Tunneling time correction to the intersubband optical absorption in a THz laser-dressed GaAs/Al x Ga1- x As quantum well

Cited by 24 publications

References 33 publications

The effects of the intense laser and homogeneous electric fields on the electronic and intraband optical properties of a GaAs/Ga0.7Al0.3As quantum ring

The effects of the intense laser and homogeneous electric fields on the electronic and intraband optical properties of a GaAs/Ga0.7Al0.3As quantum ring

Finite element 3D model of a double quantum ring: effects of electric and laser fields on the interband transition

Thz Radiation under Tunneling in Asymmetric Double Quatum Wells

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The effects of the intense laser and homogeneous electric fields on the electronic and intraband optical properties of a GaAs/Ga_0.7Al_0.3As quantum ring

The effects of the intense laser and homogeneous electric fields on the electronic and intraband optical properties of a GaAs/Ga_0.7Al_0.3As quantum ring