Tunneling through a GaN/AlN-based double-barrier resonant tunneling heterostructure

Егоркин, В. И.; Il’ichev, É. A.; Zhuravlev, M. N.; Burzin, S. B.; Shmelev, S. S.

doi:10.1134/s1063782614130041

Cited by 4 publications

(2 citation statements)

References 11 publications

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“…Furthermore, they investigated the time evolution of the current density at different temperatures and came to the conclusion that the current instability was induced by defect energy states. Egorkin et al [72] reported that the charging and discharging of deep energy centers in the barrier layers were responsible for the I-V characteristics of the RTDs through investigating the I-V curves at different temperature by heating the RTDs.…”

Section: Non-reproducible Ndr In Earlier Reportsmentioning

confidence: 99%

III-nitrides based resonant tunneling diodes

Lin

Wang

Tong

et al. 2020

J. Phys. D: Appl. Phys.

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Resonant tunneling diodes are nano-devices which have characteristics of negative differential resistance. They are widely used in digital and analog circuits to reduce components and decrease power consumption. In recent years, resonant tunneling diodes have been found to be an important choice for implementing terahertz device. GaN-based resonant tunneling diodes have inherited the advantages of III-nitride, such as high operating frequency, high power, high temperature resistance, etc, which has become a research hotspot. This paper introduces the basic situation of resonant tunneling diodes, reviews the progress of simulation and experiment, analyzes the influence of polarization field, and presents the challenges. The analysis provided in this paper may help the audience to become more familiar with current research efforts, as well as to provide inspiration for future III-nitride quantum device designs.

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Section: Non-reproducible Ndr In Earlier Reportsmentioning

confidence: 99%

III-nitrides based resonant tunneling diodes

Lin

Wang

Tong

et al. 2020

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…[5,6] Therefore, GaNbased RTDs have attracted more attention in the research field of terahertz sources. [7][8][9][10][11][12][13][14][15][16][17] Many research groups have achieved stable reproducible negative differential resistance (NDR) utilizing RTDs at room temperature. [18][19][20][21] Encomendero et al reported GaN-based RTDs grown on freestanding GaN (FS-GaN) substrates by plasma-assisted molecular beam epitaxy (PA-MBE) with the peak current density (J p ) of 220 kA/cm 2 , the fundamental frequency of ∼ 0.94 GHz, and output power of ∼ 3.0 µW.…”

Section: Introductionmentioning

confidence: 99%

Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy*

Zhou¹,

Qiu²,

Yang³

et al. 2021

Chinese Phys. B

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AlN/GaN resonant tunneling diodes (RTDs) were grown separately on freestanding GaN (FS-GaN) substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy (PA-MBE). Room temperature negative differential resistance (NDR) was obtained under forward bias for the RTDs grown on FS-GaN substrates, with the peak current densities (J p) of 175–700 kA/cm2 and peak-to-valley current ratios (PVCRs) of 1.01–1.21. Two resonant peaks were also observed for some RTDs at room temperature. The effects of two types of substrates on epitaxy quality and device performance of GaN-based RTDs were firstly investigated systematically, showing that lower dislocation densities, flatter surface morphology, and steeper heterogeneous interfaces were the key factors to achieving NDR for RTDs.

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Repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown on silicon

Zhang

Yang

Wang

et al. 2022

Applied Physics Letters

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We report repeatable AlN/GaN resonant tunneling diodes (RTDs) grown on a silicon substrate by plasma-assisted molecular-beam epitaxy. The RTDs exhibit stable negative differential resistance without hysteresis at room temperature, where no degradation is observed even after 500 continuous bidirectional sweeps. The peak-to-valley current ratio is 1.36, and the peak current density is 24.38 kA/cm2. When the temperature is changed from 77 to 475 K, the peak current remains almost unchanged and the valley current increases gradually, resulting in a reduced peak-to-valley current ratio from 1.59 to 1.07. Our work softens the material quality constraints on realizing the room-temperature repeatable negative differential resistance and paves the way to low-cost III-nitride-based monolithic and hybrid microwave integrated circuits on large-size silicon wafers.

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Tunneling through a GaN/AlN-based double-barrier resonant tunneling heterostructure

Cited by 4 publications

References 11 publications

III-nitrides based resonant tunneling diodes

III-nitrides based resonant tunneling diodes

Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy*

Repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown on silicon

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