Tunneling spectroscopy and tunneling magnetoresistance in (GaMn)As ultrathin heterostructures

Hayashi, Takashi; Shimada, Hiroshi; Shimizu, Hiroki; Tanaka, Masaaki

doi:10.1016/s0022-0248(98)01440-7

Cited by 51 publications

(27 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The first observation of TMR in the GaMnAs-based heterostructure was reported in 1999 by Hayashi et al 24 in Ga 0.961 Mn 0.039 As (200 nm)/AlAs (3 nm)/Ga 0.961 Mn 0.039 As (200 nm), showing the TMR ratio of 5% at 4.2 K. Here, we define the TMR ratio as (R AP -R P )/R P , where R AP and R P are resistances in anti-parallel magnetization and that in parallel magnetization at zero-magnetic field, respectively. Because the lattice constant of GaMnAs is slightly larger than that of GaAs, the GaMnAs film grown on GaAs receives a compressive strain.…”

mentioning

confidence: 98%

Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

Tanaka

Ohya

Hai

2014

Applied Physics Reviews

View full text Add to dashboard Cite

Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and magnetoresistive random access memory using giant magnetoresistance and tunneling magnetoresistance, are already put to practical use, semiconductor-based spintronics has greater potential for expansion because of good compatibility with existing semiconductor technology. Many semiconductor-based spintronics devices with useful functionalities have been proposed and explored so far. To realize those devices and functionalities, we definitely need appropriate materials which have both the properties of semiconductors and ferromagnets. Ferromagnetic semiconductors (FMS), which are alloy semiconductors containing magnetic atoms such as Mn and Fe, are one of the most promising classes of materials for this purpose, and thus have been intensively studied for the past two decades. Here, we review the recent progress in the studies of the most prototypical III-V based FMS, p-type (GaMn)As, and its heterostructures with focus on tunneling transport, Fermi level, and bandstructure. Furthermore, we cover the properties of a new n-type FMS, (InFe)As, which shows electron-induced ferromagnetism. These FMS materials having zinc-blende crystal structure show excellent compatibility with well-developed III-V heterostructures and devices.

show abstract

mentioning

confidence: 98%

Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

Tanaka

Ohya

Hai

2014

Applied Physics Reviews

View full text Add to dashboard Cite

show abstract

“…As is well-known, MTJs typically involve only metallic ferromagnets, [10] and the physics is well-described by the "generic" Julliere model. [12] More recent experiments using ferromagnetic semiconductor MTJs [13,14] have instead needed detailed band structure modeling to properly explain the tunneling. [15] Both these all-metal or all-semiconductor MTJs necessarily probe tunneling between materials with similar conductivity.…”

mentioning

confidence: 99%

Spin-polarized tunneling in hybrid metal-semiconductor magnetic tunnel junctions

Chun

Potashnik

et al. 2002

Phys. Rev. B

View full text Add to dashboard Cite

We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low temperatures in epitaxial magnetic tunnel junctions composed of a ferromagnetic metal (MnAs) and a ferromagnetic semiconductor (Ga 1−x Mn x As) separated by a nonmagnetic semiconductor (AlAs). Analysis of the current-voltage characteristics yields detailed information about the asymmetric tunnel barrier. The low temperature conductancevoltage characteristics show a zero bias anomaly and a √ V dependence of the conductance, indicating a correlation gap in the density of states of Ga 1−x Mn x As. These experiments suggest that MnAs/AlAs heterostructures offer well characterized tunnel junctions for high efficiency spin injection into GaAs.

show abstract

“…A variety of III-V based ferromagnetic HSs were prepared, and novel phenomena and functions were observed. These include injection of spin-polarized carriers into SCs [52], large TMR in SC HSs [41,[53][54], control of ferromagnetism by light irradiation [55] and by gate electric field [56].…”

Section: Iii-v Based Ferromagnetic Hssmentioning

confidence: 99%

Spintronics: recent progress and tomorrow's challenges

Tanaka

2005

Journal of Crystal Growth

View full text Add to dashboard Cite

Tunneling spectroscopy and tunneling magnetoresistance in (GaMn)As ultrathin heterostructures

Cited by 51 publications

References 18 publications

Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

Spin-polarized tunneling in hybrid metal-semiconductor magnetic tunnel junctions

Spintronics: recent progress and tomorrow's challenges

Contact Info

Product

Resources

About