Tunneling Magnetoresistive Heads Beyond 150&amp;gt;tex&amp;lt;$hboxGb/in^2$&amp;gt;/tex&amp;lt;

Mao, Sining; Linville, E.; Nowak, Janusz; Zhang, Zhenyong; Chen, Shawn; Karr, Brian W.; Anderson, Paul E.; Ostrowski, Mark; Boonstra, T.; Cho, Haeseok; Heinonen, Olle; Kief, M. T.; Chi, Songxue; Price, J. W.; Shukh, A.; Amin, Nurul; Kolbo, P.; Lu, Peilin; Steiner, Philip; Feng, Yong Chang; Yeh, Nan-Hsiung; Swanson, Basil I.; Ryan, Patrick J.

doi:10.1109/tmag.2003.821167

Cited by 31 publications

(8 citation statements)

References 26 publications

(20 reference statements)

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“…20,21) We also obtained TMR ratios of 130% at RA ¼ 1:7 mm 2 and 165% at RA ¼ 2:9 mm 2 , which are about eight to ten times greater than the ratios of aluminum oxide barrier MTJs with similar RA. 22,23) Figure 3 shows the bias voltage dependence of TMR ratio at 5 K and RT for a MTJ with a 1.5-nm-thick MgO barrier deposited at 10 mTorr and annealed at 400 C. This device has a Ru underlayer. The bias voltage was defined as positive when electrons were flowing from the bottom to the top layer.…”

mentioning

confidence: 99%

Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering

Ikeda

Hayakawa

Lee

et al. 2005

Jpn. J. Appl. Phys.

107

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ReceivedWe investigated dependence of tunnel magnetoresistance effect in CoFeB/MgO/CoFeB magnetic tunnel junctions on Ar pressure during MgO-barrier sputtering. Sputter deposition of MgO-barrier at high Ar pressure of 10 mTorr resulted in smooth surface and highly (001) oriented MgO. Using this MgO as a tunnel barrier, tunnel magnetoresistance (TMR) ratio as high as 355% at room temperature (578% at 5K) was realized after annealing at 325 o C or higher, which appears to be related to a highly (001) oriented CoFeB texture promoted by the smooth and highly oriented MgO. Electron-beam lithography defined deep-submicron MTJs having a low-resistivity Auunderlayer with the high-pressure deposited MgO showed high TMR ratio at low resistance-area product (RA) below 10 Ωμm 2 as 27% at RA = 0.8 Ωμm 2 , 77% at RA = 1.1 Ωμm 2 , 130% at RA = 1.7 Ωμm 2 , and 165% at RA = 2.9 Ωμm 2 .

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mentioning

confidence: 99%

Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering

Ikeda

Hayakawa

Lee

et al. 2005

Jpn. J. Appl. Phys.

107

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“…In one channel, spin polarized electrons tunnel through the oxide barrier giving rise to the TMR effect and sensor‐like magnetic field dependence while in the other conduction channel there is no spin polarization of the electrical current which gives rise to a pure resistance change without an impact on the magnetic properties of the tunneling channel. [ 53,54 ] The data in Figure 3d shows a linear correlation between TMR and the calculated resistance × area product which is the signature of a two‐channel conduction mechanism where a spin‐dependent tunneling path and a parallel spin‐independent conduction path coexist. This is the reason the LRS shows no TMR signal, by creating a conducting path through the oxide effectively we shunted the barrier with an variable resistor that depends on the amplitude of the applied voltage bias, as schematized in the inset of Figure 3d.…”

Section: Resultsmentioning

confidence: 97%

Exploring Multifunctionality in MgO‐Based Magnetic Tunnel Junctions with Coexisting Magnetoresistance and Memristive Properties

Schulman

Paz

Böhnert

et al. 2023

Adv Funct Materials

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Magnetic tunnel junctions (MTJs) and memristors are two key emerging nanotechnologies that attracted significant interest for potential applications at the forefront of the digital revolution, including sensing, data storage, and non‐conventional computation. The co‐integration of these phenomena into a single multifunctional device is an important step toward harnessing the re‐programmability of memristive systems with the high yield and varied functionality of MTJs. This study demonstrates the co‐existence of magnetoresistance and memristive properties on MgO‐based MTJs. These devices show a magnetoresistance with a linear response as a function of a magnetic field and no hysteresis, which are the requirements for good magnetic field sensors, as well as demonstrating a non‐volatile and quasi‐analogue memristive behavior as a function of an applied electrical field down to nanosecond pulses. Furthermore, by doping the oxide barrier, the memristive power consumption is lowered by 20% giving the multi‐functionality of the devices a promising scalability potential. This study also shows that, memristive switching can be reversibly used to completely suppress and recover the spintronic functionalities. These results can pave the way for a seamless co‐integration of memristors and spintronic devices in complex reprogrammable circuits addressing applications such as reprogrammable multifunctional field sensor arrays and neuromorphic computing.

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“…As we can expect, magnetic tunnel junction (MTJ) has also been utilized to develop biosensors [54, 101], which is the current technology widely used for read heads in hard disk drives [55]. While GMR relies on spin-dependent scattering of electrons between magnetic layers, MTJ is involved with spin-dependent tunneling effect.…”

Section: Magnetic Sensor Arraysmentioning

confidence: 99%

Emerging protein array technologies for proteomics

Lee¹,

Magee²,

Gaster³

et al. 2013

Expert Review of Proteomics

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Numerous efforts have been made to understand fundamental biology of diseases based on gene expressions. However, the relationship between gene expressions and onset of diseases often remains obscure. The great advances in protein microarrays allow us to investigate this unclear question through protein profiles, which are regarded as more reliable than gene expressions to serve as the harbinger of disease onset or as the biomarker of disease treatment monitoring. We review two relatively new platforms of protein arrays, along with an introduction to the common basis of protein array technologies. Immobilization of proteins on the surface of arrays and neutralizing reactive areas after the immobilization are key practical issues in the field of protein array. One of the emerging protein array technologies is the magneto-nanosensor array where giant magnetoresistive (GMR) sensors are used to quantitatively measure analyte of interest which are labeled with magnetic nanoparticles (MNP). Similar to GMR, several different ways of utilizing magnetic properties for biomolecular detection have been developed and are reviewed here. Another emerging protein array technology is Nucleic Acid Programmable Protein Arrays (NAPPA), which have thousands of protein features directly expressed by nucleic acids on array surface. We anticipate these two emerging protein array platforms can be combined to produce synergistic benefits and open new applications in proteomics and clinical diagnostics.

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Tunneling Magnetoresistive Heads Beyond 150>tex<$hboxGb/in^2$>/tex<

Cited by 31 publications

References 26 publications

Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering

Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering

Exploring Multifunctionality in MgO‐Based Magnetic Tunnel Junctions with Coexisting Magnetoresistance and Memristive Properties

Emerging protein array technologies for proteomics

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