Tunneling magnetoresistance sensors for high fidelity current waveforms monitoring

Dąbek, Michał; Wiśniowski, P.; Kalabiński, Paweł; Wrona, Jerzy; Moskaltsova, Anastasiia; Cardoso, S.

doi:10.1016/j.sna.2016.10.001

Cited by 14 publications

(6 citation statements)

References 22 publications

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“…At higher bias, the sensitivity declined slightly, except for the sensor with low sensitivity (FS3), where it declined considerably. The significant improvement (increase) in field sensitivity with bias magnitude implies that the reduction of TMR ratio [ 9 , 10 ] typically observed for these devices with bias voltage was lower than the current increase. Importantly, the rate of increase and maximal values of the field sensitivity were higher under negative bias voltage.…”

Section: Bias Dependence Of Sensing Characteristicsmentioning

confidence: 99%

“…These features and properties make TMR sensors an important class of solid-state magnetic field sensors that can be designed to sense magnetic fields in a wide range, with high sensitivity, high spatial resolution (down to nm) and ultra-low power consumption. Importantly, the sensors can be used to sense not only the magnetic field but also to indirectly sense magnetic nanoparticles, electric current, rotation, and angle [ 8 , 9 , 10 ].…”

Section: Introductionmentioning

confidence: 99%

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Bias Voltage Dependence of Sensing Characteristics in Tunneling Magnetoresistance Sensors

Wiśniowski

Nawrocki

Wrona

et al. 2021

Sensors

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One of the characteristic features of tunneling magnetoresistance (TMR) sensors is a strong influence of bias voltage on tunneling current. Since fundamental sensing characteristics of the sensors are primarily determined by the tunneling current, the bias voltage should impact these characteristics. Previous research has indeed showed the influence of the bias voltage on the magnetic field detection and sensitivity. However, the effect has not been investigated for nonlinearity and hysteresis and the influence of bias voltage polarity has not yet been addressed. Therefore, this paper systematically investigates the dependence of field sensitivity, nonlinearity, hysteresis and magnetic field detection of CoFeB/MgO/CoFeB-based magnetoresistance sensors on bias voltage magnitude and polarity. The sensitivity and field detection of all sensors improved significantly with the bias, whereas the nonlinearity and hysteresis deteriorated. The sensitivity increased considerably (up to 32 times) and linearly with bias up to 0.6 V. The field detection also decreased substantially (up 3.9 times) with bias and exhibited the minimum values for the same magnitude under both polarities. Significant and linear increases with bias were also observed for nonlinearity (up to 26 times) and hysteresis (up to 33 times). Moreover, not only the voltage magnitude but also the polarity had a significant effect on the sensing characteristics. This significant, linear and simultaneous effect of improvement and deterioration of the sensing characteristics with bias indicates that both bias voltage magnitude and polarity are key factors in the control and modification of these characteristics.

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Section: Bias Dependence Of Sensing Characteristicsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Bias Voltage Dependence of Sensing Characteristics in Tunneling Magnetoresistance Sensors

Wiśniowski

Nawrocki

Wrona

et al. 2021

Sensors

Self Cite

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“…Superior sensing properties [9] make CoFeB/MgO/CoFeB-based tunneling magnetoresistance (TMR) sensors promising candidates for accurate current sensing in a wide frequency range [10]. By connecting the sensors in a bridge configuration, it is possible to reach high sensitivity (tens of mV/V/A) in comparatively wide linear ranges (few mT) [11,12], which can be useful particularly in industrial electronics applications [13].…”

Section: Introductionmentioning

confidence: 99%

Sensitivity and 3 dB Bandwidth in Single and Series-Connected Tunneling Magnetoresistive Sensors

Dąbek

Wiśniowski

Stobiecki

et al. 2016

Sensors

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As single tunneling magnetoresistive (TMR) sensor performance in modern high-speed applications is limited by breakdown voltage and saturation of the sensitivity, for higher voltage applications (i.e., compatible to 1.8 V, 3.3 V or 5 V standards) practically only a series connection can be applied. Thus, in this study we focused on sensitivity, 3 dB bandwidth and sensitivity-bandwidth product (SBP) dependence on the DC bias voltage in single and series-connected TMR sensors. We show that, below breakdown voltage, the strong bias influence on sensitivity and the 3 dB frequency of a single sensor results in higher SBP than in a series connection. However, the sensitivity saturation limits the single sensor SBP which, under 1 V, reaches the same level of 2000 MHz∙V/T as in a series connection. Above the single sensor breakdown voltage, linear sensitivity dependence on the bias and the constant 3 dB bandwidth of the series connection enable increasing its SBP up to nearly 10,000 MHz∙V/T under 5 V. Thus, although by tuning bias voltage it is possible to control the sensitivity-bandwidth product, the choice between the single TMR sensor and the series connection is crucial for the optimal performance in the high frequency range.

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“…TMR sensors have also been used in current sensing [27] [28], but with accuracy that is limited by the non-linearity, hysteresis and poor offset stability of these devices ( Table 1).…”

Section: Magnetoresistorsmentioning

confidence: 99%

Contactless measurement of electric current using magnetic sensors

Ripka

2019

Tm - Technisches Messen

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We review recent advances in magnetic sensors for DC/AC current transducers, especially novel AMR sensors and integrated fluxgates, and we make critical comparison of their properties. Most contactless electric current transducers use magnetic cores to concentrate the flux generated by the measured current and to shield the sensor against external magnetic fields. In order to achieve this, the magnetic core should be massive. We present coreless current transducers which are lightweight, linear and free of hysteresis and remanence. We also show how to suppress their weak point: crosstalk from external currents and magnetic fields.

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Tunneling magnetoresistance sensors for high fidelity current waveforms monitoring

Cited by 14 publications

References 22 publications

Bias Voltage Dependence of Sensing Characteristics in Tunneling Magnetoresistance Sensors

Bias Voltage Dependence of Sensing Characteristics in Tunneling Magnetoresistance Sensors

Sensitivity and 3 dB Bandwidth in Single and Series-Connected Tunneling Magnetoresistive Sensors

Contactless measurement of electric current using magnetic sensors

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