Tunneling-injection quantum-dot laser: ultrahigh temperature stability

Asryan, Levon V.; Luryi, Serge

doi:10.1109/3.929590

Cited by 98 publications

(70 citation statements)

References 18 publications

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“…The tunnel injection scheme was introduced to minimize carrier heating and even under high injection conditions at room temperature, the carrier distribution remains quasi-Fermi in these devices. Hence, dg/dn and T 0 are expected to be high in these devices as theoretically predicted by Luryi et al 4 Next, we turn to the formulation for dg/dn. In Eq.…”

mentioning

confidence: 79%

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Response to “Comment on ‘Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature’ ” [Appl. Phys. Lett. 81, 2659 (2002)]

Bhattacharya¹,

Ghosh²

2002

Applied Physics Letters

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mentioning

confidence: 79%

“…4 We thank Reidl and Hangleiter 1 for a critical reading of our recent letter. 2 In response we make the following comments.…”

mentioning

confidence: 94%

Response to “Comment on ‘Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature’ ” [Appl. Phys. Lett. 81, 2659 (2002)]

Bhattacharya¹,

Ghosh²

2002

Applied Physics Letters

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“…We note, finally, a radically new design strategy, recently proposed to improve the temperature stability of QD lasers [33], [34]. In this approach, the two reservoirs feeding carriers into the quantum confined region are essentially unipolar and the finite-delay capture process is not accompanied by a build-up of a bipolar carrier density and additional recombination.…”

Section: Discussionmentioning

confidence: 99%

“…In this approach, the two reservoirs feeding carriers into the quantum confined region are essentially unipolar and the finite-delay capture process is not accompanied by a build-up of a bipolar carrier density and additional recombination. We therefore expect that lasers designed according to [33], [34] will exhibit linear behavior and excellent power performance. …”

Section: Discussionmentioning

confidence: 99%

Internal efficiency of semiconductor lasers with a quantum-confined active region

Asryan

Luryi

Suris

2003

IEEE J. Quantum Electron.

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Abstract-We discuss in detail a new mechanism of nonlinearity of the light-current characteristic (LCC) in heterostructure lasers with reduced-dimensionality active regions, such as quantum wells (QWs), quantum wires (QWRs), and quantum dots (QDs). It arises from: 1) noninstantaneous carrier capture into the quantum-confined active region and 2) nonlinear (in the carrier density) recombination rate outside the active region. Because of 1), the carrier density outside the active region rises with injection current, even above threshold, and because of 2), the useful fraction of current (that ends up as output light) decreases. We derive a universal closed-form expression for the internal differential quantum efficiency int that holds true for QD, QWR, and QW lasers. This expression directly relates the power and threshold characteristics. The key parameter, controlling int and limiting both the output power and the LCC linearity, is the ratio of the threshold values of the recombination current outside the active region to the carrier capture current into the active region. Analysis of the LCC shape is shown to provide a method for revealing the dominant recombination channel outside the active region. A critical dependence of the power characteristics on the laser structure parameters is revealed. While the new mechanism and our formal expressions describing it are universal, we illustrate it by detailed exemplary calculations specific to QD lasers. These calculations suggest a clear path for improvement of their power characteristics. In properly optimized QD lasers, the LCC is linear and the internal quantum efficiency is close to unity up to very high injection-current densities (15 kA/cm 2 ). Output powers in excess of 10 W at int higher than 95% are shown to be attainable in broad-area devices. Our results indicate that QD lasers may possess an advantage for high-power applications.Index Terms-Quantum dots (QDs), quantum wells (QWs), quantum wires (QWRs), semiconductor heterojunctions, semiconductor lasers.

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“…1(b), there is no region of bipolar carrier population, i.e., no parasitic electron-hole recombination outside the QW-we should set b ¼ 0 in Eq. (13). Thus, no matter how slow is the carrier capture into the QW, there will be 100% quantum efficiency (Figs.…”

Section: Theoretical Modelmentioning

confidence: 99%

Light-current characteristic of a quantum well laser with asymmetric barrier layers

Asryan

Kryzhanovskaya

Maximov

et al. 2013

Journal of Applied Physics

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Articles you may be interested in Improvement of the performance characteristics of deep violet InGaN multi-quantum-well laser diodes using step-graded electron blocking layers and a delta barrier J. Appl. Phys. 113, 123108 (2013) Light-current characteristic (LCC) of a novel type of quantum well (QW) lasers-QW lasers with asymmetric barrier layers (ABLs)-is studied. The ABLs (one on each side of the QW) prevent electrons from entering the hole-injecting side of the structure and holes from entering the electron-injecting side. The use of ABLs thus suppresses the parasitic electron-hole recombination outside the QW and eliminates the mechanism of sublinearity of the LCC in conventional lasers associated with this recombination and with the carrier capture delay into the QW. As a result, no matter how slow is the carrier capture into the QW, the LCC of an ABL QW laser is virtually linear. In an ABL laser containing indent layers between the QW and each of the ABLs (parasitic recombination still occurs in these thin layers), even in the case of slow capture of carriers into the QW, the LCC is also considerably more linear than in a reference conventional QW laser. V C 2013 AIP Publishing LLC.[http://dx

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Tunneling-injection quantum-dot laser: ultrahigh temperature stability

Cited by 98 publications

References 18 publications

Response to “Comment on ‘Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature’ ” [Appl. Phys. Lett. 81, 2659 (2002)]

Response to “Comment on ‘Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature’ ” [Appl. Phys. Lett. 81, 2659 (2002)]

Internal efficiency of semiconductor lasers with a quantum-confined active region

Light-current characteristic of a quantum well laser with asymmetric barrier layers

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