Tunneling-induced large cross-phase modulation in an asymmetric quantum well

Sun, Hui; Niu, Yueping; Li, Ruxin; Jin, Shiqi; Gong, Shangqing

doi:10.1364/ol.32.002475

Cited by 69 publications

(38 citation statements)

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“…For the present QW structure, the results turn out to be γ 2l 3.47 meV, γ 3l 4.13 meV, and γ 4l 0.8 meV. Finally, the term ζ ffiffiffiffiffiffiffiffiffiffiffiffiffiffi γ 2l · γ 3l p denotes a cross-coupling term between the states j2i and j3i coming from the tunneling to the electronic continuum [17][18][19][20][21][22][23][24]. Further, the term p ζ∕ ffiffiffiffiffiffiffiffiffiffiffiffi γ 2 · γ 3 p 0.83 represents the strength of Fano-type interference induced by the strong tunneling.…”

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confidence: 75%

“…Simultaneously, these phenomena also are extended to a variety of applications [15,16]. Different from the mechanism of controlling GH shift based on photon-induced changes of the medium refractive index via coherent control beam [5][6][7][8][9], the mechanism of control GH shift is achieved here as a result of the tunneling-induced quantum interference [17][18][19][20][21][22][23].The schematic of a weak probe light incident upon a cavity containing semiconductor QWs in the configuration of four subbands is shown in Fig. 1.…”

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Tunneling-induced giant Goos–Hänchen shift in quantum wells

et al. 2015

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Tunneling-induced quantum interference experienced by an incident probe in the asymmetric double AlGaAs/GaAs quantum well (QW) structure can be modulated by means of an external control light beam and the tunable coupling strengths of resonant tunneling. These phenomena can be exploited to devise a novel intracavity medium to control Goos-Hänchen (GH) shifts of a mid-infrared probe beam incident on a cavity. For a suitably designed QW structure, our results show that maximum negative shift of 2.62 mm and positive shift of 0.56 mm are achievable for GH shifts in the reflected and transmitted light. The Goos-Hänchen (GH) effect happens when a linearly polarized light undergoes a small lateral shift for the totally internal reflection from the interface of two different media [1]. The observation by Goos and Hänchen in 1947 has attracted considerable interest because of a variety of applications in optical heterodyne sensing and precision measurement, such as refractive index, displacement, temperature, and film thickness [2][3][4]. Interesting proposals toward the control or enhancement of GH shift have already been proposed to have negative and positive GH shifts [5][6][7][8][9].In this Letter, we present a proof-of-principle investigation by demonstrating that tunneling-induced quantum interference in a semiconductor quantum well (QW) structure can be exploited to provide an efficient new mechanism for enhancing and controlling GH shift in the reflected and transmitted light. Compared to the scenario when the control beam is off, the GH shift can be reduced significantly in the presence of an external control beam. The different responses depend on whether the tunneling-induced interference is quenched or well developed. Quantum interference-based phenomena, such as electromagnetically induced transparency (EIT) [10,11], lasing without population inversion [12,13], and Raman gain process [14,15] have attracted considerable attention. Simultaneously, these phenomena also are extended to a variety of applications [15,16]. Different from the mechanism of controlling GH shift based on photon-induced changes of the medium refractive index via coherent control beam [5][6][7][8][9], the mechanism of control GH shift is achieved here as a result of the tunneling-induced quantum interference [17][18][19][20][21][22][23].The schematic of a weak probe light incident upon a cavity containing semiconductor QWs in the configuration of four subbands is shown in Fig. 1. The cavity consists of three layers of materials: two nonmagnetic dielectric slabs ε 1 with the same thickness d 1 and a QW medium ε 2 with thickness d 2 ; see Fig. 1(a). The asymmetric QW (intracavity medium) structure with the relevant conduction band levels and wave function is shown in Fig. 1(b), which can be grown in the sequence from left to right. A thick Al 0.4 Ga 0.6 As barrier is followed by a Al 0.16 Ga 0.84 As shallow well (6.8 nm) that is separated from the GaAs deep well (7.7 nm) on the right by a Al 0.4 Ga 0.6 As potential barrier (3.0 nm). Subseq...

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Tunneling-induced giant Goos–Hänchen shift in quantum wells

et al. 2015

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“…A control field drives transition |4 ↔ |2 with Rabi frequency ˝c. A similar system was also used for giant Kerr effect [30,31], slow light [32], optical switch [33][34][35], collective field entanglement [36] and optical gyroscopes [37], etc.…”

Section: Model and Basic Equationsmentioning

confidence: 99%

Coherent control of optical precursors in a warm atomic system with Doppler effects

Peng

Yang

et al. 2013

Optik

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“…Apart from some advantages than an atomic system involving high nonlinear optical coefficients and flexibility in device design offers, a QW system has its own characteristics, for example, tunnelinginduced coherence [24,31]. Based on these properties, applied research is increasingly being performed in QW systems, including ultrafast all-optical switching [32], pulse control [33], enhanced nonlinearity [34,35], slow light [36], optical solitons [37,38], bistability [39], and so on.…”

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confidence: 99%

Optical precursors with tunneling-induced transparency in asymmetric quantum wells

Peng

Niu

et al. 2011

Phys. Rev. A

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A scheme for separating optical precursors from a square-modulated laser pulse through an asymmetric double Al x Ga 1−x As/GaAs quantum-well structure via resonant tunneling is proposed. Destructive interference inhibits linear absorption, and a tunneling-induced transparency (TIT) window appears with normal dispersion, which delays the main pulse; then optical precursors are obtained. Due to resonant tunneling, constructive interference for nonlinear susceptibility is created. The enhanced dispersion in a narrow TIT window is about one order of magnitude larger than that of the linear case. In this case, the main pulse is much delayed and the precursor signals are easier to obtain. Moreover, the main pulse builds up due to the gain introduced by the enhanced cross-nonlinearity.

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Tunneling-induced large cross-phase modulation in an asymmetric quantum well

Abstract: We propose an asymmetric double AlGaAs/GaAs quantum well structure with a common continuum to generate a large cross-phase modulation (XPM). It is found, owing to resonant tunneling, that a large XPM can be achieved with vanishing linear and two-photon absorptions.

Cited by 69 publications

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Tunneling-induced giant Goos–Hänchen shift in quantum wells

Tunneling-induced giant Goos–Hänchen shift in quantum wells

Coherent control of optical precursors in a warm atomic system with Doppler effects

Optical precursors with tunneling-induced transparency in asymmetric quantum wells

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