Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale

Gruverman, Alexei; Wu, Di; Lu, Haidong; Wang, Y.; Jang, Ho Won; Folkman, C. M.; Zhuravlev, M. Ye.; Felker, D. A.; Rzchowski, M. S.; Eom, C. B.; Tsymbal, Evgeny Y.

doi:10.1021/nl901754t

Cited by 541 publications

(487 citation statements)

References 30 publications

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“…The barrier heights f 1 and f 2 were regarded as adjustable parameters independent of applied voltage in the considered voltage range and the effective mass m b was assumed to be equal to the free electron mass m e (ref. 48). As is seen from Fig.…”

mentioning

confidence: 55%

“…At the same time, the barrier height at the epitaxial BTO/BE interface, where the contacting materials are bound by strong interatomic forces, should still change after the polarization reversal owing to the microscopic and depolarizing-field effects. Hence, under favourable contact conditions the TER effect can be observed even in FTJs where the conducting AFM tip is used as a TE 23,48 .…”

Section: Discussionmentioning

confidence: 99%

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Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions

et al. 2014

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Among recently discovered ferroelectricity-related phenomena, the tunnelling electroresistance (TER) effect in ferroelectric tunnel junctions (FTJs) has been attracting rapidly increasing attention owing to the emerging possibilities of non-volatile memory, logic and neuromorphic computing applications of these quantum nanostructures. Despite recent advances in experimental and theoretical studies of FTJs, many questions concerning their electrical behaviour still remain open. In particular, the role of ferroelectric/electrode interfaces and the separation of the ferroelectric-driven TER effect from electrochemical ('redox'-based) resistance-switching effects have to be clarified. Here we report the results of a comprehensive study of epitaxial junctions comprising BaTiO 3 barrier, La 0.7 Sr 0.3 MnO 3 bottom electrode and Au or Cu top electrodes. Our results demonstrate a giant electrode effect on the TER of these asymmetric FTJs. The revealed phenomena are attributed to the microscopic interfacial effect of ferroelectric origin, which is supported by the observation of redox-based resistance switching at much higher voltages.

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mentioning

confidence: 55%

Section: Discussionmentioning

confidence: 99%

Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions

et al. 2014

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“…Since many oxides exhibit resistive switching behaviour [167], the key problem is to reveal the correlation between the FE polarization and tunnelling conductance. This has been achieved very recently when three experimental groups reported independently experimental observations of the TER effect associated with the switching of FE polarization of BaTiO 3 or Pb 1−x Zr x TiO 3 FE films [168][169][170]. The correlation between polarization orientation and conductance is evident from figure 11, which shows results of local probe measurements using piezoelectric force microscopy (PFM) (figure 11a) in conjunction with conductive-atomic force microscopy (C-AFM; figure 11b).…”

Section: (A) Ferroelectric Tunnel Junctionsmentioning

confidence: 88%

Multi-ferroic and magnetoelectric materials and interfaces

Velev

Jaswal

Tsymbal

2011

Phil. Trans. R. Soc. A.

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201

141

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The existence of multiple ferroic orders in the same material and the coupling between them have been known for decades. However, these phenomena have mostly remained the theoretical domain owing to the fact that in single-phase materials such couplings are rare and weak. This situation has changed dramatically recently for at least two reasons: first, advances in materials fabrication have made it possible to manufacture these materials in structures of lower dimensionality, such as thin films or wires, or in compound structures such as laminates and epitaxial-layered heterostructures. In these designed materials, new degrees of freedom are accessible in which the coupling between ferroic orders can be greatly enhanced. Second, the miniaturization trend in conventional electronics is approaching the limits beyond which the reduction of the electronic element is becoming more and more difficult. One way to continue the current trends in computer power and storage increase, without further size reduction, is to use multi-functional materials that would enable new device capabilities. Here, we review the field of multi-ferroic (MF) and magnetoelectric (ME) materials, putting the emphasis on electronic effects at ME interfaces and MF tunnel junctions.

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“…consists of two different electrodes or interface terminations 18 . The TER associated with ferroelectric polarization switching has been observed experimentally in BaTiO 3 -and PbTiO 3 -based FTJs in which either La 2/3 Sr 1/3 MnO 3 or SrRuO 3 is used as one of the electrodes while the other side of the ferroelectric thin film is in contact with the tip of an atomic force microscope [24][25][26] . The predicted simultaneous TMR and TER effects 23 have also been demonstrated experimentally in La 2/3 Sr 1/3 MnO 3 /BaTiO 3 /Fe (or Co) MFTJs [27][28][29][30][31][32][33][34] .…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric control of spin-transfer torque in multiferroic tunnel junctions

et al. 2015

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Based on model calculations we predict electric-field control of the spin transfer torque (STT) in magnetic tunnel junctions with ferroelectric barriers. We demonstrate that the bias dependence of the in-plane, T , and out-of-plane, T ⊥ , components of the STT can be dramatically modified by the ferroelectric polarization. In particular, the magnitude of the STT can be enhanced or suppressed by switching the polarization direction and in some cases the sign of STT can be toggled. The underlying mechanism is the combination of polarization-induced symmetry breaking and the interplay of the bias-induced and polarization-induced spin-dependent screening giving rise to a rich behavior of the electrostatic potential energy profile. These properties could lead to enhanced switching efficiency in STT-based devices and open a new avenue for applications of multiferroic devices.

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Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale

Cited by 541 publications

References 30 publications

Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions

Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions

Multi-ferroic and magnetoelectric materials and interfaces

Ferroelectric control of spin-transfer torque in multiferroic tunnel junctions

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