2009
DOI: 10.1007/s10948-009-0535-0
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Tunneling Conductance of Ba1−x K x Fe2As2–GaAs Junction

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Cited by 2 publications
(2 citation statements)
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“…A point contact of a degenerated semiconductor GaAs with (Ba, K)-122 with T c = 31 K was realized by Tanaka et al [48]. A single gap of 9 meV was obtained but additional structures at about 23 mV were related to phonons or internal SIS Josephson junctions.…”
Section: Multiple Energy Gapsmentioning
confidence: 96%
See 1 more Smart Citation
“…A point contact of a degenerated semiconductor GaAs with (Ba, K)-122 with T c = 31 K was realized by Tanaka et al [48]. A single gap of 9 meV was obtained but additional structures at about 23 mV were related to phonons or internal SIS Josephson junctions.…”
Section: Multiple Energy Gapsmentioning
confidence: 96%
“…For the 122-family most results provide a single gap only, but with a wide spread of the gap values. Table 1 summarizes the experimental results on tunnelling and point contact measurements for the 122family [43][44][45][46][47][48][49][50].…”
Section: Multiple Energy Gapsmentioning
confidence: 99%