Tunnel spectroscopy of subband structure in n-inversion layers on (111) and (100) Si surfaces

Narrowband optical filter based on a Fabry–Perot interferometer with two waveguide–grating mirrors

“…When the gate voltage (V G ) ranges from 2.2 V to 2.6 V, clear negative conductance is detected at V A of around 0.7 V. It should be noted that 2D-to-2D tunneling occurs in this device because the pn junction is formed adjacent to the edges of the 2D-confined p-type and n-type silicon layers. Negative conductance is not detected at V G lower than 2.1 V or higher than 2.8 V. At V G of 2 V, the electron concentration of the inversion layer for conserving momentum is not so restricted because the momentum conserved is parallel to the confined plane 13) or the confined wire. 14,15) However, in a pn junction formed laterally in a thin film, tunneling occurs parallel to the confined plane.…”

“…In recent experiments using direct and indirect band gap semiconductors, 2D-to-3D, 13) 1D-to-2D 14) and 1D-to-3D 15) transitions have been observed. The discussion in those works is concerned with the spectroscopic study of band structure or momentum conservation.…”

“…The tunneling process has already been studied using the silicon metal oxide semiconductor fieldeffect transistor (MOSFET). 13) Since, in that configuration, tunneling occurs in the direction perpendicular to the silicon oxide/silicon interface of the MOS structure, where carriers are two-dimensionally (2D) quantized, a very simple situation can be assumed. In the case of lateral tunneling between the 2D quantized electron inversion layer and the p + layer, however, the relationship between the Fermi potential controlled by the gate voltage and the p + (anode) voltage becomes complicated.…”

Tight-binding investigation of electron tunneling through ultrathin SiO2gate oxides

“…To date, this apparent lack of k conservation has been ascribed to disorder in the oxide, interface roughness [4,15], and phonon scattering [15]. Accordingly, it also has been argued that to an extent there is short-range order in the oxide, the EM picture with parallel momentum conservation remains valid [2].…”

Semi-empirical and practical model for low-electric field direct tunneling current estimation in nanometer-thick SiO2films

“…Tunneling current characteristics of thin SiO 2 films have been studied theoretically and experimentally [1][2][3]. It is considered that Fowler-Nordheim tunneling characteristics are reasonably well understood [4,5], while a complete understanding of the direct tunneling current characteristics is a work in progress [6,7].…”