Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency

Guo, Xia; Guang-di, Shen; Zhu, Weiliang; Du, Jinyu; Gao, Guo; Zou, Deshu; Chen, Yonghai; Ma, Xiaoyu; Chen, Lianghui

doi:10.1063/1.1415041

Cited by 18 publications

(5 citation statements)

References 6 publications

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“…The dotted line in Fig. 2 shows the fit curve with the data extracted from our experiments, [4] which proves that the loss inside the TRMAR LED structure is relative small. From the analyses above, two conclusions can be drawn.…”

Section: Advantages Of Trmar Ledssupporting

confidence: 58%

The scalability of the tunnel-regenerated multi-active-region light-emitting diode structure

Guo¹,

Guang-di²

2008

Chinese Phys. B

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The scalability of the tunnel-regenerated multi-active-region (TRMAR) structure has been investigated for the application in light-emitting diodes (LEDs). The use of the TRMAR structure was proved theoretically to have unique advantages over conventional single-active-layer structures in virtually every aspect, such as high quantum efficiency, high power and low leakage. Our study showed that the TRMAR LED structure could obtain high output power under low current injection and high wall-plug efficiency compared with the conventional single-active-layer LED structure.

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Section: Advantages Of Trmar Ledssupporting

confidence: 58%

The scalability of the tunnel-regenerated multi-active-region light-emitting diode structure

Guo¹,

Guang-di²

2008

Chinese Phys. B

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“…In this early study it was already suggested that the two interfaces of the interconnecting layer play a crucial role for the CGL mechanism. Following prior reports on inorganic semiconductor devices, where stacking of active units was realized by introducing two complementarily doped layers,106, 107 several groups demonstrated stacked OLEDs employing doped organic/organic p‐n junctions as the connecting units 108, 109–114. Terai et al showed with capacitance‐voltage measurements that the charge generation of holes and electrons is electrical field‐assisted and occurs at the interface between the p‐ and the n‐doped layers 111.…”

Section: Interconnecting Layermentioning

confidence: 99%

Transition Metal Oxides for Organic Electronics: Energetics, Device Physics and Applications

Meyer

Hamwi

Kröger³

et al. 2012

Advanced Materials

1,092

900

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During the last few years, transition metal oxides (TMO) such as molybdenum tri-oxide (MoO(3) ), vanadium pent-oxide (V(2) O(5) ) or tungsten tri-oxide (WO(3) ) have been extensively studied because of their exceptional electronic properties for charge injection and extraction in organic electronic devices. These unique properties have led to the performance enhancement of several types of devices and to a variety of novel applications. TMOs have been used to realize efficient and long-term stable p-type doping of wide band gap organic materials, charge-generation junctions for stacked organic light emitting diodes (OLED), sputtering buffer layers for semi-transparent devices, and organic photovoltaic (OPV) cells with improved charge extraction, enhanced power conversion efficiency and substantially improved long term stability. Energetics in general play a key role in advancing device structure and performance in organic electronics; however, the literature provides a very inconsistent picture of the electronic structure of TMOs and the resulting interpretation of their role as functional constituents in organic electronics. With this review we intend to clarify some of the existing misconceptions. An overview of TMO-based device architectures ranging from transparent OLEDs to tandem OPV cells is also given. Various TMO film deposition methods are reviewed, addressing vacuum evaporation and recent approaches for solution-based processing. The specific properties of the resulting materials and their role as functional layers in organic devices are discussed.

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“…Recently, improving blue emission for OLEDs has drawn much attention. Using a tandem or stacked structure to form an LED is a useful way to achieve higher efficiency and a longer operational lifetime [5][6][7][8][9][10][11]. However, the reported tandem OLEDs [6][7][8][9][10][11] have a drive voltage higher than 10 V at 1,000 cd/m 2 , which may not be suitable for use in active-matrix OLED displays because of the voltage limitation of the backplane drive circuitry.…”

Section: Introductionmentioning

confidence: 99%

23.3: Distinguished Paper: High-Efficiency Tandem Blue OLEDs

Liao

Klubek

Helber

et al. 2006

SID Symposium Digest

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Tandem blue OLEDs using different fluorescent dopants have achieved 20 cd/A (CIEx,y = 0.14, 0.18) and 38 cd/A (CIEx,y = 0.15, 0.42) with external quantum efficiencies higher than 11%. The tandem blue OLEDs include two electroluminescent units that are connected in series with an organic intermediate connector. At an initial brightness of 1,000 cd/m2, the drive voltage of the devices can be less than 6.5 V, and the operational lifetime (T 50) of the devices is estimated to be greater than 10,000 h. We also demonstrate that the selection of electron‐transporting material and an intermediate connector have significant impact on the electroluminescence performance of the tandem blue OLEDs.

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Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency

Abstract: Degradation of GaN-based quantum well light-emitting diodesQuantum-confined Stark effects in the m -plane In 0.15 Ga 0.85 N ∕ Ga N multiple quantum well blue lightemitting diode fabricated on low defect density freestanding GaN substrate

Cited by 18 publications

References 6 publications

The scalability of the tunnel-regenerated multi-active-region light-emitting diode structure

The scalability of the tunnel-regenerated multi-active-region light-emitting diode structure

Transition Metal Oxides for Organic Electronics: Energetics, Device Physics and Applications

23.3: Distinguished Paper: High-Efficiency Tandem Blue OLEDs

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