Tunnel Magnetoresistance-Based Short-Circuit and Over-Current Protection for IGBT Module

Shao, Shuai; Yu, Naipeng; Xu, X. P.; Bai, Junfeng; Wu, Xinke; Zhang, Junming

doi:10.1109/tpel.2020.2980680

Cited by 39 publications

(22 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The same measuring principle applies to different magnetoresistive materials and structures, even though they give rise to different sensors. The different sensors are respectively known as anisotropic magneto-resistive (AMR) sensor, giant magnetoresistive (GMR) sensor, and tunnel magneto-resistive (TMR) sensor [101] with the last found to be more accurate and less affected by temperature drift [172]. All MRCSs are however small with high sensitivity.…”

Section: Mr Current Sensormentioning

confidence: 99%

A Review of Megahertz Current Sensors for Megahertz Power Converters

Xin

Liu

et al. 2022

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

Within a power converter, multiple currents are usually measured for control, protection, and/or monitoring. They are therefore important sources of information, which must unquestionably be measured accurately to maintain continuous and reliable operation of the power converter. Accurate current measurement has however become tougher with the introduction of wide band-gap (WBG) devices with switching frequency tending towards the Megahertz (MHz) range. Because of that, the installed current sensors must have a significantly widened bandwidth. Moreover, they must be nonintrusive and compact, in order not to degrade fast switching characteristics and high power density of the WBG converter. Presently, these features are not collectively obtainable from existing commercial current sensors. Consequently, many new current sensing techniques have surfaced in the literature for usage with the more demanding MHz power converter. These new techniques, some classical techniques, and their hybrid integrations are now reviewed, after overviewing functionalities made possible by current sensors in a power converter. Last but importantly, some future developmental trends aimed at matching MHz current sensors with MHz power converters are described, before concluding the paper.

show abstract

Section: Mr Current Sensormentioning

confidence: 99%

A Review of Megahertz Current Sensors for Megahertz Power Converters

Xin

Liu

et al. 2022

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

show abstract

“…Short-circuit switch faults are fast-acting and destructive, as it commonly damages the switch [10]. Usually, the Insulated Gate Bipolar Transistor (IGBT) switch module integrates hardware short-circuit protection mechanism [11]. However, the characteristics of open circuit faults are complex and not obvious [12].…”

Section: Introductionmentioning

confidence: 99%

Mechanical Switch Based Adaptive Fault Ride-through Strategy for Power Quality Improvement Device

Shen¹,

Hu²,

Xiao

et al. 2021

Energies

View full text Add to dashboard Cite

Cascaded H-bridge power quality improving device (PQID) has garnered extensive attention for its flexible electric energy conversion and fast voltage response. However, the failure rate of PQID is relatively high due to the use of large numbers of power electronic devices. This paper proposes a mechanical-switch based adaptive fault ride-through strategy for improving the operational stability and power supply reliability of PQID. According to the features of the topology and working principle of PQID, this paper summarized the types of internal faults and analyzed the characteristics of different types of faults. Based on the shortcomings of existing mechanical switches as a bypass method, corresponding adaptive fault ride-through strategies are proposed for different types of faults, and a comprehensive simulation test has been carried out. The results show that the proposed strategy can adaptively ride through unit faults and effectively improve the output waveform quality during the ride through time.

show abstract

“…The low bandwidth and long delay time make the openloop Hall sensor not suitable for applications with high frequency operation [4,21]. New generation of magnetic sensors based on Magneto-Resistance (MR) technology, including Anisotropic Magneto-Resistive (AMR), Giant Magneto-Resistive (GMR), and Tunnel Magneto-Resistive (TMR) sensors, with smaller size and increased sensitivity, are better candidates for high frequency current measurements [22,23]. Lower resistance change ratio (e.g., low signal-to-noise ratio) and limited bandwidth are the two limitations of AMR and GMR sensors respectively.…”

Section: Introductionmentioning

confidence: 99%

“…Lower resistance change ratio (e.g., low signal-to-noise ratio) and limited bandwidth are the two limitations of AMR and GMR sensors respectively. These limitations have been overcome in the TMR sensors, as the state-of-the-art in MR sensors [21,23]. In addition, TMR has the lowest temperature drift, which is important for CM measurement.…”

Section: Introductionmentioning

confidence: 99%

High-Frequency Non-Invasive Magnetic Field-Based Condition Monitoring of SiC Power MOSFET Modules

2021

View full text Add to dashboard Cite

Current distribution anomaly can be used to indicate the onset of package-related failures modes in Silicon Carbide power MOSFET modules. In this paper, we propose to obtain the wire bond’s magnetic field profile using an array of Tunnel Magneto-Resistance (TMR) sensors, and characterise the small changes in the current density distribution to find the onset of the wire bond degradation processes, including wire bond lift-off, wire bond cracking, and wire bond fracture. We propose a novel condition monitoring technique where a non-galvanic high-bandwidth sensing and a reliability model monitor the health of the power switches. We designed a dedicated calibration set-up to examine the sensor array and calibrated to demonstrate the adequate sensitivity to a minimum 5% current anomaly detection in a single wire bond of the switching devices operating with 50 kHz switching frequency. We use a hardware-in-the-loop (HIL) experimental set-up to replicate wire bond-related failures in a 1200V/55A SiC MOSFET power module of a DC/DC Boost converter. Signal conditioning circuits are further designed to amplify and buffer the sensor readings. Experimental results showed the proposed technique is able to detect a wide range of package-related failures.

show abstract

Tunnel Magnetoresistance-Based Short-Circuit and Over-Current Protection for IGBT Module

Cited by 39 publications

References 23 publications

A Review of Megahertz Current Sensors for Megahertz Power Converters

A Review of Megahertz Current Sensors for Megahertz Power Converters

Mechanical Switch Based Adaptive Fault Ride-through Strategy for Power Quality Improvement Device

High-Frequency Non-Invasive Magnetic Field-Based Condition Monitoring of SiC Power MOSFET Modules

Contact Info

Product

Resources

About