Tunnel Field-Effect Transistor With Segmented Channel

Abstract

A tunnel field-effect transistor with segmented channels (Seg-TFET) on a corrugated substrate is proposed. The Seg-TFET takes advantage of using three stripes and the selective contact configuration to define the direction of current, and thereby its device performance can be improved. Furthermore, the process flow of the Seg-TFET demonstrates a substantiation of the new device structure. Consequently, its current flow is simply defined by adjusting the appropriate contact configuration at metal-zero-level without any additional front-end-of-line process.

Effects of Interface Trap on Transient Negative Capacitance Effect: Phase Field Model

“…In this estimation, the parasitic capacitance parallel to the FEC is assumed to be small enough to be ignored [14]. The value of the resistor was fixed as 800 Ω to amplify the negative capacitance effects, and the volume of the capacitor is 16 × 16 × 10 nm 3 .…”

“…To overcome the Boltzmann tyranny (i.e., reduce the power dissipation), steep switching (SS < 60 mV/dec) devices have been proposed. Several devices have been proposed, such as the feedback field-effect transistor (FET) [2], tunneling FET [3], phase FET [4], nanoelectromechanical switches (NEMS) device [5], and negative capacitance (NC) FET [6,7]. Among these, the NCFET has emerged as a promising device due to its representative advantage.…”