Tunnel FET-based ultra-low power, high-sensitivity UHF RFID rectifier

Novel UHF Passive Rectifier with Tunnel FET Devices

“…3 a) has been presented as a viable solution for RF energy harvesting at low power levels (~mW range) with conventional transistors [3][4][5]. The application of TFET devices in the DDPR topology was also investigated in [6][7]. The authors have shown by simulations higher power conversion efficiency at low RF voltage amplitudes (sub-0.35 V AC ) compared to the use of the FinFET technology.…”

“…RFID tags and biomedical implants are examples of radio-frequency (RF) powered circuits that can be placed in areas of difficult access, and therefore, the constant replacement of their batteries is undesired. However, the low power conversion efficiency (PCE) demonstrated by UHF passive rectifiers at low RF input power levels (below -30 dBm) along with the limited available RF power from the surrounding environment constrains the operation range of these circuits in both distance of operation and computational capability [1][2][3][4][5][6][7].…”

“…The steep-slope Tunnel FET (TFET) device has been shown to increase the efficiency of passive rectifiers at lower RF power levels compared to the use of FinFET technologies [6][7]. For example, an RF passive rectifier circuit with TFETs can improve the PCE up to 70 % at -39 dBm, compared to the 7 % achieved with the FinFET technology at similar load conditions [6].…”

Tunnel FET device characteristics for RF energy harvesting passive rectifiers

“…For the TFET technology, and considering the simulations in section II B, this biasing condition can result in a high drift diffusion current, and consequently high reverse losses in the rectifier. In fact, the application of TFET devices in this passive rectifier topology was already investigated in [5,8]. The authors have shown by simulations higher power efficiency at low RF AC magnitude voltage values (sub-0.35 VAC) compared to the use of the FinFET technology.…”

“…With a sub-60 mV/dec of SS, this device is suitable in the EH field, both in the ultra-low power DC-DC conversion [7] and AC-DC rectification [5,8]. For example, an RF passive rectifier circuit with TFETs can improve the PCE up to 70 % at -39 dBm [5].…”