Tunnel Emission Into Vacuum. Ii

Cohen, Julius

doi:10.1063/1.1777370

Cited by 24 publications

(5 citation statements)

References 2 publications

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“…[5][6][7][8][9] This type of emitter works by biasing an ultrathin tunnel barrier which is sandwiched between two electrodes, a semiconductor and a metal layer. [5][6][7][8][9] This type of emitter works by biasing an ultrathin tunnel barrier which is sandwiched between two electrodes, a semiconductor and a metal layer.…”

Section: Introductionmentioning

confidence: 99%

Electron emission from ultralarge area metal-oxide-semiconductor electron emitters

Thomsen¹,

Nielsen²,

Vendelbo³

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inThe effects of the in-plane momentum on the quantization of nanometer metal-oxide-semiconductor devices due to the difference between the effective masses of silicon and gate oxide Appl. Phys. Lett. 91, 123519 (2007); 10.1063/1.2789733 Polysilicon metal-insulator-semiconductor electron emitter Determination of electron trap distribution in the gate-oxide region of the deep submicron metal-oxide-semiconductor structure from direct tunneling gate current Effective lifetime of electrons trapped in the oxide of a metal-oxide-semiconductor structure Appl. Phys. Lett. 75, 522 (1999); 10.1063/1.124435Hot electron impact excitation cross-section of Er 3+ and electroluminescence from erbium-implanted silicon metal-oxide-semiconductor tunnel diodes Ultralarge metal-oxide-semiconductor ͑MOS͒ devices with an active oxide area of 1 cm 2 have been fabricated for use as electron emitters. The MOS structures consist of a Si substrate, a SiO 2 tunnel barrier ͑ϳ5 nm͒, a Ti wetting layer ͑3-10 Å͒, and a Au top layer ͑5-60 nm͒. Electron emission from the Au metal layer to vacuum is realized from these devices by applying bias voltages larger than the work function of the Au layer. The emission is characterized for Au layers with thicknesses ranging from 5 to 60 nm nominally. The emission efficiency changes from close to 10 −6 to 10 −10 . The Ti wetting layer is varied from 3 to 10 Å which changes the emission efficiency by more than one order of magnitude. The apparent mean free path of ϳ5 eV electrons in Au is found to be 52 Å. Deposition of Cs on the Au film increased the electron emission efficiency to 4.3% at 4 V by lowering the work function. Electron emission under high pressures ͑up to 2 bars͒ of Ar was observed.

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Section: Introductionmentioning

confidence: 99%

Electron emission from ultralarge area metal-oxide-semiconductor electron emitters

Thomsen¹,

Nielsen²,

Vendelbo³

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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show abstract

“…The thicker films exhibit no stable uniaxial anisotropy and their coercivities are much larger. Cohen (1962) has reported a detailed study of anomalous nickel-iron films and has classified films exhibiting RIS properties into two types, which can be distinguished by the effect of a large alternating field. For RIS type 1 the reversible initial susceptibility in the direction of the large alternating field is zero, and 90" away is a maximum.…”

Section: Discussionmentioning

confidence: 99%

“…The possible origins of such a set of anisotropy centres have been considered by Cohen (1962). He concluded that the most likely reason for its existence is inhomogeneous strain within magnetostrictive films.…”

Section: Discussionmentioning

confidence: 99%

Rotatable initial susceptibility in evaporated cobalt films

Carey¹,

Isaac²,

Thomas³

1969

J. Phys. D: Appl. Phys.

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The magnetization reversal process in evaporated cobalt films in the thickness range 1000-4000 Å has been studied by use of the transverse Kerr effect to display hysteresis loops and the longitudinal Kerr effect to observe magnetic domain structures. The samples investigated all exhibit a rotatable initial susceptibility and an unusual mode of magnetization reversal, which suggests that the films behave as random assemblies of magnetostatically interacting uniaxial crystallites.

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“…The metal-tip field-emission electron source needs strong electric field on the metal surface to lower the potential barrier [3]. In the planar-type electron source, on the other hand, strong electric filed is applied only to the inner insulator, through which electrons tunnel, and does not exist on the surface of the topmost metallic gate electrode [4,5]. This situation allows us to use the planar-type electron source even in low vacuum.…”

Section: Introductionmentioning

confidence: 99%

Simulation of Electron Transmission through Graphene with Inelastic Scattering

Koichi,

Kawashima,

Abo

et al. 2024

e-J. Surf. Sci. Nanotechnol.

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Tunnel Emission Into Vacuum. Ii

Cited by 24 publications

References 2 publications

Electron emission from ultralarge area metal-oxide-semiconductor electron emitters

Electron emission from ultralarge area metal-oxide-semiconductor electron emitters

Rotatable initial susceptibility in evaporated cobalt films

Simulation of Electron Transmission through Graphene with Inelastic Scattering

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