Tunnel electron photoemission in the nanoscale DLC film structure with electrostatic field localization

Aban'shin, N. P.; Akchurin, Garif G.; Avetisyan, Yuri A.; Loginov, Alexander P.; Mosiyash, D. S.; Yakunin, A. N.

doi:10.1117/12.2268436

Cited by 4 publications

(5 citation statements)

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“…This happens despite the low photon energy, which is noticeably less than the work function φ0. The results provided in the recent works [5,12,13,25,26] demonstrate the experimental observation of the tunnel photoemission. It is obvious that efficiency of the analyzed structure of the photosensor will improve if an additional adjustment element is introduced that ensures implementation of the matching principle to the localization zones of the absorbed optical and electrostatic fields.…”

Section: A Model For the Tunnel Photocurrent Within The Structuresupporting

confidence: 60%

“…This happens despite the low photon energy, which is noticeably less than the work function ϕ 0 . The results provided in the recent works [5,12,13,25,26] demonstrate the experimental observation of the tunnel photoemission.…”

Section: A Model For the Tunnel Photocurrent Within The Structuresupporting

confidence: 60%

“…The probability of tunneling of nonequilibrium photoelectrons generated in the surface layer of molybdenum with the thickness Lτ with the energy EF + hν and the momentum directed normally to the surface of the emitter is determined by the following relationship [13,21]: (4) Here, hν is the energy of irradiating photons, y ≡ (e 3 F) Accounting of the temperature effects carried out in the work of [12] allowed us to obtain the relations needed to determine the tunneling probability of hot electrons that reach the surface of the emitter Pλ, and the tunneling photocurrent density IPh from the metal emitter depending on the electrostatic field F and the monochromatic light intensity Iλ. Figure 6.…”

Section: Appl Sci 2019 9 X For Peer Review 9 Of 16mentioning

confidence: 99%

Section: Appl Sci 2019 9 X For Peer Review 9 Of 16mentioning

confidence: 99%

“…On the contrary, the photosensor design discussed in this work is sufficiently less sensitive to the above mentioned technological problems. Its production is based on the standard planar technology [13,14] and includes the photolithography, liquid etching, and magnetron sputtering deposition. In addition, the developed vacuum technology provides high performance and reproducibility of the devices.…”

Section: Introductionmentioning

confidence: 99%

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A Visible and Near-IR Tunnel Photosensor with a Nanoscale Metal Emitter: The Effect of Matching of Hot Electrons Localization Zones and a Strong Electrostatic Field

et al. 2019

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The results of the research and design of a novel vacuum photosensor with a planar molybdenum blade structure are presented. The advanced prototype implements the principle of an increasing penetrability of the Schottky barrier for the metal–vacuum interfaces under the action of an external strong electrostatic field. Theoretical and experimental substantiation of the photosensor performance in a wide range of wavelengths (from 430 to 680 nm and from 800 to 1064 nm) beyond the threshold of the classical photoelectric effect is given. The finite element method was applied to calculate distribution of the optical and electrostatic fields inside the photosensor structure. The sensor current-to-light response was studied using the periodic pulsed irradiation with the tunable wavelength. It was shown that the nanoscale localization zones of two types are formed near the surface of the blade tip: the zone of an increased concentration of hot electrons localized inside the molybdenum blade, and the zone with an increased strength of the external electrostatic field localized outside the blade. In general, the mutual positions of these zones may not coincide, whereas the position of the first-type localization zone significantly varies with the changes in the wavelength of the irradiating light. This causes features in the spectrum of the quantum yield of the photosensor such as expressed non-monotonic behavior and occurrence of sharp dips. The design of the photosensor that provides matching of the positions for both types of localization zones was proposed; the manufactured prototypes of the designed device were experimentally studied. In the designed photosensor, the ballistic transport of photoelectrons in the vacuum gap with a strong field provides a possibility for the creation of ultra-fast optoelectronic devices, such as modulators, detectors, and generators.

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