Tunnel-Coupled Laser Diode Microarray as a kW-Level 100-ns Pulsed Optical Power Source (λ = 910 nm)

Сліпченко, С. О.; Podoskin, A. A.; Veselov, D. A.; Strelets, V.A.; Rudova, N. A.; Pikhtin, N. A.; Bagaev, T. A.; Ладугин, М. А.; Маrmalyuk, А. А.; Kop’ev, P. S.

doi:10.1109/lpt.2021.3134370

Cited by 12 publications

(4 citation statements)

References 15 publications

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“…Gain switched diode lasers integrated with tailored electronic drivers, generating high pulse power with a few nanoseconds long current pulses with amplitudes up to 1 kA, are ideal candidates for such Li-DAR systems [3,4]. The commercialization of these diode lasers necessitates a further increase in detection range and, thus, higher pulse power and a minimization of the required pulse current amplitudes, which can be achieved by epitaxially stacking multiple active regions, separated by tunnel junctions [5][6][7][8][9]. In this way, a nearly N-fold increase of optical power at constant current has been reported, where N is the number of stacked active regions.…”

mentioning

confidence: 99%

Wavelength‐stabilized ns‐pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions

Ammouri

Christopher

Fricke

et al. 2022

Electronics Letters

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The improvement of the performance of a distributed Bragg reflector laser bar emitting near 905 nm through the use of multiple epitaxially stacked active regions and tunnel junctions is reported. The bar consisting of 48 emitters (each having an aperture of 50 µm) emits an optical power of 2.2 kW in 8 ns long pulses at an injection current of 1.1 kA. This corresponds to an almost threefold increase of the pulse power compared to a bar with lasers having only a single active region. Due to the integrated surface Bragg grating, the bar exhibits a narrow spectral bandwidth of about 0.3 nm and a thermal tuning of only 68 pm/K.

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mentioning

confidence: 99%

Wavelength‐stabilized ns‐pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions

Ammouri

Christopher

Fricke

et al. 2022

Electronics Letters

View full text Add to dashboard Cite

show abstract

“…Gain switched diode lasers integrated with tailored electronic drivers, generating high pulse power with a few nanoseconds long current pulses with amplitudes up to 1 kA, are ideal candidates for such LiDAR systems [3,4]. The commercialization of these diode lasers necessitates a further increase in detection range and, thus, higher pulse power and a minimization of the required pulse current amplitudes, which can be achieved by epitaxially stacking multiple active regions, separated by tunnel junctions [5][6][7][8][9]. In this way, a nearly 𝑁fold increase of optical power at constant current has been reported, where 𝑁 is the number of stacked active regions.…”

Section: Hosted Filementioning

confidence: 99%

Wavelength-stabilized ns-pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions

Ammouri

Christopher

Fricke

et al. 2022

Preprint

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The improvement of the performance of a distributed Bragg reflector laser bar emitting near 905 nm through the use of multiple epitaxially stacked active regions and tunnel junctions is reported. The bar consisting of 48 emitters (each having an aperture of 50 μm) emits an optical power of 2.2 kW in 8 ns long pulses at an injection current of 1.1 kA. This corresponds to an almost threefold increase of the pulse power compared to a bar with lasers having only a single active region. Due to the integrated surface Bragg grating, the bar exhibits a narrow spectral bandwidth of about 0.3 nm and a thermal tuning of only 68 pm/K.

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“…Rather than stacking individual LDs [16], epitaxial stacking is desirable since it can simplify packaging and is cost-effective. Relatively long cavity length lasers (≥2.5 mm) have been demonstrated in the form of microarray with short pulse operation power levels above 100 W [12] and for 1-cm wide bars with QCW output power levels above 1 kW [13,14,15]. OSRAM reported 905 nm pulsed LDs with a peak output power of 125 W using vertically integrated three emitters with PCE of 28.4% at 40 A [17].…”

Section: Introductionmentioning

confidence: 99%

Epitaxially-Stacked High Efficiency Laser Diodes Near 905 nm

Zhao

Yang

Zhao³

et al. 2022

IEEE Photonics J.

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We report on studying tunnel junctions and an optical cavity structure for developing epitaxially-stacked high-efficiency 905 nm high-power laser diodes. The GaAs tunnel junctions were explored via simulation and experiments to realize a high peak current density of 7.7×10 4 A/cm 2 and a low specific resistance of 1.5×10 -5 Ωcm 2 with a high n-doping concentration of 6×10 19 cm -3 . Employing a low-loss epitaxial structure design, single-, double-, and triple-cavity structure laser diodes demonstrated power scaling by epitaxial stacking. Triplecavity laser diodes have a low optical loss (0.42 cm -1 ) and generate a peak power of 83 W with a short cavity length of 750 µm at a limited current of 30 A.

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Tunnel-Coupled Laser Diode Microarray as a kW-Level 100-ns Pulsed Optical Power Source (λ = 910 nm)

Cited by 12 publications

References 15 publications

Wavelength‐stabilized ns‐pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions

Wavelength‐stabilized ns‐pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions

Wavelength-stabilized ns-pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions

Epitaxially-Stacked High Efficiency Laser Diodes Near 905 nm

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