2019
DOI: 10.1063/1.5110984
|View full text |Cite
|
Sign up to set email alerts
|

Tuning ZnO nanorods photoluminescence through atmospheric plasma treatments

Abstract: Room temperature atmospheric plasma treatments are widely used to activate and control chemical functionalities at surfaces. Here, we investigated the effect of atmospheric pressure plasma jet (APPJ) treatments in reducing atmosphere (Ar/1‰ H2 mixture) on the photoluminescence (PL) properties of single crystal ZnO nanorods (NRs) grown through hydrothermal synthesis on fluorine-doped tin oxide glass substrates. The results were compared with a standard annealing process in air at 300 °C. Steady-state photolumin… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
14
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
8

Relationship

2
6

Authors

Journals

citations
Cited by 24 publications
(14 citation statements)
references
References 45 publications
0
14
0
Order By: Relevance
“…Sheet resistance can be reduced by several orders of magnitude, due to the persistent photoconductivity effect, while resistivity is restored to high values after turning off UV radiation Materials 2021, 14, 6535 2 of 14 during the storage of samples under ambient conditions [17]. It has been shown that plasma treatment under a hydrogen atmosphere is an effective method for improving the electrical properties of ZnO films [18][19][20]. According to Dong et al, free carrier concentration and mobility in the ZnO can be varied from 1 × 10 17 cm −3 and 7 cm 2 V −1 s −1 in as-synthesized film up to 1 × 10 18 cm −3 and 39 cm 2 V −1 s −1 in the film treated in hydrogen plasma [19].…”
Section: Introductionmentioning
confidence: 99%
“…Sheet resistance can be reduced by several orders of magnitude, due to the persistent photoconductivity effect, while resistivity is restored to high values after turning off UV radiation Materials 2021, 14, 6535 2 of 14 during the storage of samples under ambient conditions [17]. It has been shown that plasma treatment under a hydrogen atmosphere is an effective method for improving the electrical properties of ZnO films [18][19][20]. According to Dong et al, free carrier concentration and mobility in the ZnO can be varied from 1 × 10 17 cm −3 and 7 cm 2 V −1 s −1 in as-synthesized film up to 1 × 10 18 cm −3 and 39 cm 2 V −1 s −1 in the film treated in hydrogen plasma [19].…”
Section: Introductionmentioning
confidence: 99%
“…In addition, since the reduction process is not limited to the topmost exposed layer, the electrons and hydrogen atoms are expected to migrate through the surface, as already speculated for copper oxides [7]. The migration of atomic hydrogen in polycrystalline structures, indeed, have been already observed and demonstrated a high mobility [38]. This means that some semiconductors will endure a spontaneous reduction process in contact with the afterglow while other will not endure such an electrochemical reaction.…”
Section: Model Of the Reduction Mechanismmentioning
confidence: 79%
“…In addition, low temperature and wet-chemical environment of the hydrothermally grown ZnO NRs and NWs tend to create severe native and intrinsic defects, which in turn can cause uncontrolled conductivity, lattice imperfections and fast electron-hole recombination rate 21 . Therefore, several solutions have been targeted to either modify the intrinsic crystalline properties of ZnO (annealing in different atmosphere, plasma treatment) and/or broaden its absorption profile through designing a combinatorial composite system via metal and non-metal doping [22][23][24][25][26][27] . In particular, coupling with noble metals is an effective approach to enhance the visible light absorption of wide bandgap semiconductors, which inherently can also assist the passivation of their intrinsic defects 6,7 .…”
Section: Introductionmentioning
confidence: 99%