2017
DOI: 10.1021/acs.nanolett.7b03744
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Tuning the Two-Dimensional Electron Liquid at Oxide Interfaces by Buffer-Layer-Engineered Redox Reactions

Abstract: Polar discontinuities and redox reactions provide alternative paths to create two-dimensional electron liquids (2DELs) at oxide interfaces. Herein, we report high mobility 2DELs at interfaces involving SrTiO3 (STO) achieved using polar La7/8Sr1/8MnO3 (LSMO) buffer layers to manipulate both polarities and redox reactions from disordered * Corresponding Authors.

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Cited by 24 publications
(39 citation statements)
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“…The perovskite structure is generally expressed as ABO 3-δ , where δ ≈ 0, A is the rare or alkaline earth metal and B is the transition metal. The oxygen deficiency converts the ideal cubic structure of ABO 3 into the orthogonal structure of ABO 2.5+δ' , where δ' is a small value that influences the space group of brownmillerites. 6 Therefore, brownmillerite can be regarded as oxygen-deficient perovskite.…”
Section: Introductionmentioning
confidence: 99%
“…The perovskite structure is generally expressed as ABO 3-δ , where δ ≈ 0, A is the rare or alkaline earth metal and B is the transition metal. The oxygen deficiency converts the ideal cubic structure of ABO 3 into the orthogonal structure of ABO 2.5+δ' , where δ' is a small value that influences the space group of brownmillerites. 6 Therefore, brownmillerite can be regarded as oxygen-deficient perovskite.…”
Section: Introductionmentioning
confidence: 99%
“…(STO), is the base material for the emerging field of oxide electronics. Two-dimensional electron gases (2DEGs) at STO-based heterointerfaces, [1][2][3][4] LaAlO3/SrTiO3 (LAO/STO) in particular, 1 exhibit a large number of remarkable physical properties, such as superconductivity, 5 magnetism, 6 sensitivity to electric field, 7 light illumination, 8 and high electron mobility, [9][10] which show potential applications in the next generation of electronic devices. 11 Despite intensive research, the origin of the conductivity at the LAO/STO interface remains hotly debated.…”
Section: Introductionmentioning
confidence: 99%
“…This results in, for example, the observation of quantum Hall effect in delta‐doped STO and in a LaMnO 3 (LMO) buffered LAO/STO heterointerface . Among the various capping or buffer layers of manganites and cuprates used, the introduction of an electron sink of polar LMO as a buffer layer at the LAO/STO interface is of particular interest, which provides a more effective modulation‐doping effect than the capping layer cases as well as a strong suppression of oxygen vacancies on the STO side …”
mentioning
confidence: 99%