Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of<i>in situ</i>hydrogenation and annealing

Jabakhanji, Bilal; Michon, A.; Conséjo, Christophe; Desrat, Wilfried; Portail, Marc; Tiberj, Antoine; Paillet, Matthieu; Zahab, A.; Cheynis, Fabien; Lafont, F.; Schopfer, F.; Poirier, W.; Bertran, F.; Fèvre, P. Le; Taleb‐Ibrahimi, A.; Kazazis, Dimitrios; Escoffier, Walter; Camargo, Bruno Cury; Kopelevich, Y.; Camassel, Jean; Jouault, Benoît

doi:10.1103/physrevb.89.085422

Cited by 27 publications

(35 citation statements)

References 36 publications

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“…S2). This could stem from both disorder-induced Landau level broadening (such an effect was also seen in graphene with similar mobility 32 ) and a finite thickness (side surface) effect 33 . At even higher temperature (>50 K), the bulk conduction starts to become significant and possibly suppress the QH states.…”

Section: Also Of Interest Inmentioning

confidence: 89%

Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator

et al. 2014

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Abstract:A three-dimensional (3D) topological insulator (TI) is a quantum state of matter with a gapped insulating bulk yet a conducting surface hosting topologically-protected gapless surface states. One of the most distinct electronic transport signatures predicted for such topological surface states (TSS) is a well-defined half-integer quantum Hall effect (QHE) in a magnetic field, where the surface Hall conductivities become quantized in units of (1/2)e 2 /h (e being the electron charge, h the Planck constant) concomitant with vanishing resistance. Here, we observe well-developed QHE arising from TSS in an intrinsic TI of BiSbTeSe 2 . Our samples exhibit surface dominated conduction even close to room temperature, while the bulk conduction is negligible. At low temperatures and high magnetic fields perpendicular to the top and bottom surfaces, we observe well-developed integer quantized Hall plateaus, where the two parallel surfaces each contributing a half integer e 2 /h quantized Hall (QH) conductance, accompanied by vanishing longitudinal resistance. When the bottom surface is gated to match the top surface in carrier density, only odd integer QH plateaus are observed, representing a half-integer QHE of two degenerate Dirac gases. This system provides an excellent platform to pursue a plethora of exotic physics and novel device applications predicted for TIs, ranging from magnetic monopoles and Majorana particles to dissipationless electronics and fault-tolerant quantum computers.2

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Section: Also Of Interest Inmentioning

confidence: 89%

Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator

et al. 2014

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“…(The supplementary material describes the dual alternating contact AFM technique 19 which contrasts the graphene from the surrounding SiO 2 . 24 ) The labeled wrinkle in Fig. 2(b) has a height of 3-12 nm which varies along its length.…”

mentioning

confidence: 97%

Direct observation of resistive heating at graphene wrinkles and grain boundaries

Grosse

Dorgan

Estrada

et al. 2014

Applied Physics Letters

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We directly measure the nanometer-scale temperature rise at wrinkles and grain boundaries (GBs) in functioning graphene devices by scanning Joule expansion microscopy with $50 nm spatial and $0.2 K temperature resolution. We observe a small temperature increase at select wrinkles and a large ($100 K) temperature increase at GBs between coalesced hexagonal grains. Comparisons of measurements with device simulations estimate the GB resistivity (8-150 X lm) among the lowest reported for graphene grown by chemical vapor deposition. An analytical model is developed, showing that GBs can experience highly localized resistive heating and temperature rise, most likely affecting the reliability of graphene devices. Our studies provide an unprecedented view of thermal effects surrounding nanoscale defects in nanomaterials such as graphene. V C 2014 AIP Publishing LLC. [http://dx.Graphene, a monolayer of hexagonally arranged carbon atoms, has been the subject of intense research due to its thinness ($3.4 Å ), unique linear band structure, 1 and quasiballistic electrical and thermal transport up to micron length scales at room temperature. 2,3 Graphene applications typically rely on material growth by chemical vapor deposition (CVD) on metal substrates. 4 This process can produce graphene up to meter dimensions, 5 but typically of a polycrystalline nature, with the sheet being made up of a patchwork of grains connected by grain boundaries (GBs). 6 In addition, various transfer processes from the metallic growth substrate onto other substrates (e.g., SiO 2 , BN, and plastics) can lead to wrinkling of the monolayer material. 7 Not surprisingly, GBs and wrinkles are expected to degrade the thermal, 8 electrical, 9,10 and mechanical 11 properties of graphene. Recent work has measured the electrical resistance of graphene GBs, 9-14 which is important as they limit the overall electrical performance of graphene devices grown by CVD. 6 However, the associated temperature rise resulting from nanometer-scale resistive heating of GBs is currently unknown. Understanding this aspect is important both from a graphene device perspective (e.g. reliability) and also as a unique platform directly connecting the technology of nanoscale thermometry tools with the science of atomic-scale heat generation at defects within realistic devices.In this study, we measured the nanometer-scale temperature rise in CVD grown hexagonal graphene grains using scanning Joule expansion microscopy (SJEM), 15-18 a thermometry technique based on atomic force microscopy (AFM). We specifically study the resistive heating at graphene wrinkles and GBs, giving insight into the coupled electrical and thermal properties of such nanoscale defects. We observe a small temperature rise at wrinkles and a larger temperature rise at GBs (150%-300% greater than the surrounding graphene) due to the finite GB resistivity and to non-uniform current flow across GBs, visualized here with nanometer-scale resolution. Figure 1(a) shows the optical image of a typical GB device used in ...

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“…The most widely studied among the carbon sources is propane [114,121,124,126,[128][129][130][131][132][133][134][135][136][137]. There is only a few works devoted to ethene [125], toluene [127] and xylene [127] as carbon sources for graphene growth on silicon carbide.…”

Section: Growth Of Graphene On Sic Using External Sourcesmentioning

confidence: 99%

“…14). Up to this moment we considered only the literature reports devoted to propane-argon assisted growth, but there is also some interesting experimental data on CVD growth of graphene by using hydrogen as a carrier gas [114,126,129,131,132,136]. Michon et al [114,126,129] demonstrated the possibility of direct growth of graphene on 6H-SiC (0001) and 3C-SiC/Si substrates.…”

Section: Growth Of Graphene On Sic Using External Sourcesmentioning

confidence: 99%

Combining graphene with silicon carbide: synthesis and properties – a review

Shtepliuk

Khranovskyy

Yakimova

2016

Semicond. Sci. Technol.

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Being a true two-dimensional crystal, graphene possesses a lot of exotic properties that would enable unique applications. Integration of graphene with inorganic semiconductors, e.g. SiC promotes the birth of a class of hybrid materials which are highly promising for development of novel operations, since they combine the best properties of two counterparts in the frame of one hybrid platform. As a specific heterostructure, graphene on SiC performs strongly dependent on the synthesis method and the growth modes.In this paper a comprehensive review of the most relevant studies of graphene growth methods and mechanisms on SiC substrates has been carried out. The aim is to elucidate the basic physical processes that are responsible for the formation of graphene on SiC.First, an introduction is made covering some intriguing and not so often discussed properties of graphene. Then, we focus on integration of graphene with SiC which is facilitated by the nature of SiC to assume graphitization. As concerning the synthesis methods we discuss thermal decomposition of SiC, chemical vapor deposition and molecular beam epitaxy stressing that the first technique is the most common one when SiC substrates are used. In addition, we briefly appraise graphene synthesis via metal mediated carbon segregation.We address in detail the main aspects of the substrate effect such as substrate face polarity, offcut, kind of polytype and nonpolar surfaces on the growth of graphene layers. A comparison of graphene grown on the polar faces is made. In particular, growth of graphene on Si-face SiC is critically analyzed concerning growth kinetics and growth mechanisms taking into account the specific characteristics of SiC (0001) surfaces, such as the step-terrace structure and the unavoidable surface reconstruction upon heating. In all subtopics obstacles and solutions are featured. We complete the review with a short summary and concluding remarks. Outline

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Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect ofin situhydrogenation and annealing

Cited by 27 publications

References 36 publications

Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator

Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator

Direct observation of resistive heating at graphene wrinkles and grain boundaries

Combining graphene with silicon carbide: synthesis and properties – a review

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