Tuning the Semiconducting Properties of Sexithiophene byα,ω-Substitution—α,ω-Diperfluorohexylsexithiophene: The First n-Type Sexithiophene for Thin-Film Transistors

Facchetti, Antonio; Deng, Yvonne; Wang, Anchuan; Koide, Yoshihiro; Sirringhaus, Henning; Marks, Tobin J.; Friend, Richard H.

doi:10.1002/1521-3773(20001215)39:24<4547::aid-anie4547>3.0.co;2-j

Cited by 277 publications

(183 citation statements)

References 42 publications

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“…[139] Once again, a known p-type material (i.e., DH6T) was converted to n-type by simply functionalizing it with appropriate electron withdrawing groups. Although the HOMO±LUMO gap remains the same for both DHF-6T and DH6T (ca.…”

Section: N-type Organic Semiconductorsmentioning

confidence: 86%

Organic Thin Film Transistors for Large Area Electronics

Dimitrakopoulos¹,

2002

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Organic thin‐film transistors (OTFTs) have lived to see great improvements in recent years. This review presents new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of OTFTs. The shifted focus in research from novel chemical structures to fabrication technologies that optimize morphology and structural order is underscored by chapters on vacuum‐deposited and solution‐processed organic semiconducting films. Finally, progress in the growing field of the n‐type OTFTs is discussed in ample detail. The Figure, showing a pentacene film edge on SiO2, illustrates the morphology issue.

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Section: N-type Organic Semiconductorsmentioning

confidence: 86%

Organic Thin Film Transistors for Large Area Electronics

Dimitrakopoulos¹,

2002

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“…[44][45][46][47][48][49][50][51] Materials with long alkyl chains, especially, have shown drastic morphological change after the thermal treatment, which lead to large change in the performance of TFT. [29][30][31]37,[42][43][44][45] Attached long alkyl chains added highly mobile nature to the molecular backbone, and this highly mobile nature makes it possible to change the film morphology greatly with a thermal treatment at a rather low temperature. For the thermal treatment during the film deposition, the effect of the thermal treatment is widely known to be related to the density of nucleation sites, film growth rate, and the surface free energy of substrates.…”

Section: -39mentioning

confidence: 89%

“…On the other hand, many of OTFTs have shown a large enhancement in carrier mobility through the thermal treatment during film deposition [29][30][31][33][34][35][36][37][40][41][42][43][44] and/or after film formation. [44][45][46][47][48][49][50][51] Materials with long alkyl chains, especially, have shown drastic morphological change after the thermal treatment, which lead to large change in the performance of TFT.…”

Section: -39mentioning

confidence: 99%

“…For the thermal treatment during the film deposition, the effect of the thermal treatment is widely known to be related to the density of nucleation sites, film growth rate, and the surface free energy of substrates. 44 For the thermal treatment after film deposition, however, the detailed mechanism is not so much studied yet although it seems very much simple comparing with that of the thermal treatment during film deposition because there is not nucleation step nor film growth step. Our research group have already reported that N,NЈ-ditridecyl PTCDI ͑PTCDI-C13͒ TFTs exhibited very high electron mobility of 2.1 cm 2 / V s by the thermal treatment at 140°C after film deposition.…”

Section: -39mentioning

confidence: 99%

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Thermal treatment effects on N-alkyl perylene diimide thin-film transistors with different alkyl chain

Jeon¹,

Hattori²,

Kato³

et al. 2010

Journal of Applied Physics

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The authors report that thermal treatment effect on various N , NЈ-dialkyl-3,4,9,10-perylene tetracarbxylic diimides ͓PTCDI-Cn, alkyl-dodecyl ͑n=12͒, butadecyl ͑n=14͒, octadecyl ͑n=18͔͒ thin-film transistors ͑TFTs͒ depends on the substituted alkyl chain length. It is clearly demonstrated that there are two kinds of molecular movements during the thermal treatment on PTCDI films; molecular rearrangement in the same layer and molecular migration from the lower layer to the upper layer. The former is directly related to the grain growth and can be controllable by applying an external electric field. The latter is also related not only to the grain growth but also to the formation of cracks between grains. These two movements show opposite dependence on the alkyl chain length during the thermal treatment; the former is more active in longer alkyl chain, but the latter in shorter one. However, they also have opposite effect to TFT performance, and PTCDI films with longer alkyl chains have great advantage on TFT performance for the thermal treatment. Consequently, PTCDI-C18 TFTs show the highest electron mobility as large as 1.2 cm 2 / V s after the thermal treatment at 140°C.

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“…Polythiophenes and functionalized thiophenes have been used to create devices with increasing efficiency and offer the promise of flexible and printed circuits [74][75][76]. Like most organic semiconductors, oligothiophenes and their functionalized derivatives are p-type semiconductors with hole transport perpendicular to the long axis, although some functionalized thiophenes show n-type behavior with mobilities of 0.02 cm 2 V s [77]. Oligothiophenes can be functionalized to improve their solubility, so that they may be processed in solution [78].…”

Section: Overviewmentioning

confidence: 99%

Two-photon Photoemission of Organic Semiconductor Molecules on Ag(111)

Yang

2008

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Angle-and time-resolved two-photon photoemission (2PPE) was used to study systems of organic semiconductors on Ag(111). The 2PPE studies focused on electronic behavior specific to interfaces and ultrathin films. Electron time dynamics and band dispersions were characterized for ultrathin films of a prototypical n-type planar aromatic hydrocarbon, PTCDA, and representatives from a family of p-type oligothiophenes.In PTCDA, electronic behavior was correlated with film morphology and growth modes.Within a few monolayers of the interface, image potential states and a LUMO+1 state were detected. The degree to which the LUMO+1 state exhibited a band mass less than a free electron mass depended on the crystallinity of the layer. Similarly, image potential states were measured to have free electron-like effective masses on ordered surfaces, and the effective masses increased with disorder within the thin film. Electron lifetimes were correlated with film growth modes, such that the lifetimes of electrons excited into systems created by layer-by-layer, amorphous film growth increased by orders of magnitude by only a few monolayers from the surface. Conversely, the decay dynamics of electrons in Stranski-Krastanov systems were limited by interaction with the exposed wetting layer, which limited the barrier to decay back into the metal.Oligothiophenes including monothiophene, quaterthiophene, and sexithiophene were deposited on Ag(111), and their electronic energy levels and effective masses were studied as a function of oligothiophene length. The energy gap between HOMO and LUMO decreased with increasing chain length, but effective mass was found to depend on domains 2 from high-or low-temperature growth conditions rather than chain length. In addition, the geometry of the molecule on the surface, e.g., tilted or planar, substantially affected the electronic structure.

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Tuning the Semiconducting Properties of Sexithiophene byα,ω-Substitution—α,ω-Diperfluorohexylsexithiophene: The First n-Type Sexithiophene for Thin-Film Transistors

Cited by 277 publications

References 42 publications

Organic Thin Film Transistors for Large Area Electronics

Organic Thin Film Transistors for Large Area Electronics

Thermal treatment effects on N-alkyl perylene diimide thin-film transistors with different alkyl chain

Two-photon Photoemission of Organic Semiconductor Molecules on Ag(111)

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