Tuning the optical properties of InAs QDs by means of digitally-alloyed GaAsSb strain reducing layers

Salhi, A.; Alshaibani, S.; Alaskar, Yazeed; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; Missous, M.

doi:10.1063/1.5048475

Cited by 11 publications

(6 citation statements)

References 30 publications

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“…Clear satellite peaks resulting from the 6-nm-thick In 0.33 Ga 0.67 As CL structure are observed at around 64.0° for samples 1 and 2. Further inspection reveals that In 0.20 Ga 0.80 As/In 0.30 Ga 0.70 As SSL in sample 3 exhibits a satellite peak at around 64.4°, and the shift towards larger degrees with respect to that of In 0.33 Ga 0.67 As CLs suggests a decrease of the average In content [38, 39]. To understand the effect of SSL CLs on the optical properties of the InAs/GaAs QDs, temperature-dependence PL spectra for sample 3 are also measured as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications

Jiang

Ning

et al. 2019

Nanoscale Res Lett

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Low-dimensional III–V InAs/GaAs quantum dots (QDs) have been successfully applied to semiconductor saturable absorber mirrors (SESAMs) working at a 900–1310-nm wavelength range for ultrafast pulsed laser applications benefitting from their broad bandwidth, wavelength flexibility, and low saturation fluence. However, it is very challenging to obtain a high-performance QD-SESAM working at the longer wavelength range around 1550 nm due to the huge obstacle to epitaxy growth of the QD structures. In this work, for the first time, it is revealed that, the InAs/GaAs QD system designed for the 1550-nm light emission range, the very weak carrier relaxation process from the capping layers (CLs) to QDs is mainly responsible for the poor emission performance, according to which we have developed a short-period superlattice (In0.20Ga0.80As/In0.30Ga0.70As)5 as the CL for the QDs and has realized ~ 10 times stronger emission at 1550 nm compared with the conventional InGaAs CL. Based on the developed QD structure, high-performance QD-SESAMs have been successfully achieved, exhibiting a very small saturation intensity of 13.7 MW/cm2 and a large nonlinear modulation depth of 1.6 %, simultaneously, which enables the construction of a 1550-nm femtosecond mode-locked fiber lasers with excellent long-term working stability.

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Section: Resultsmentioning

confidence: 99%

Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications

Jiang

Ning

et al. 2019

Nanoscale Res Lett

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“…We note also that the energy separation between the fundamental and first excited state ΔE remains nearly constant at 64 meV with decreasing excitation power, and this is evidence that the electric field resulting from the charge build up is perpendicular to the growth direction [22], i.e., the holes in the GaAsSb are localized above the QDs. A type II emission is expected in sample A as the Sb content in the GaAsSb, which is 13%, is close to the composition where a transition from type I to type II occurs [23, 24]. For the considered Sb content, a small valence band offset between the QDs and the GaAsSb QW should exist favoring the localization of holes in the GaAsSb QW and subsequently type II emissions [25, 26].…”

Section: Resultsmentioning

confidence: 99%

Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers

et al. 2019

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In this work, we investigate the optical properties of InAs quantum dots (QDs) capped with composite In0.15Al0.85As/GaAs0.85Sb0.15 strain-reducing layers (SRLs) by means of high-resolution X-ray diffraction (HRXRD) and photoluminescence (PL) spectroscopy at 77 K. Thin In0.15Al0.85As layers with thickness t = 20 Å, 40 Å, and 60 Å were inserted between the QDs and a 60-Å-thick GaAs0.85Sb0.15 layer. The type II emissions observed for GaAs0.85Sb0.15-capped InAs QDs were suppressed by the insertion of the In0.15Al0.85As interlayer. Moreover, the emission wavelength was blueshifted for t = 20 Å and redshifted for t ≥ 40 Å resulting from the increased confinement potential and increased strain, respectively. The ground state and excited state energy separation is increased reaching 106 meV for t = 60 Å compared to 64 meV for the QDs capped with only GaAsSb SRL. In addition, the use of the In0.15Al0.85As layers narrows significantly the QD spectral linewidth from 52 to 35 meV for the samples with 40- and 60-Å-thick In0.15Al0.85As interlayers.

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“…Antimony (Sb) has been studied extensively as both a capping layer material, using GaAsSb [25][26][27], and as a surfactant during different stages of QD growth [23,24,28]. By capping with GaAsSb, dramatic red shifts to QD emission have been demonstrated [25,26].…”

Section: Introductionmentioning

confidence: 99%

Growth of InAs(Bi)/GaAs Quantum Dots under a Bismuth Surfactant at High and Low Temperature

Bailey

Carr

David

et al. 2022

Journal of Nanomaterials

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Indium arsenide quantum dots are of great interest for next-generation telecom optoelectronics if their emission wavelength can be red shifted into the correct range. One method to achieve this is the deposition of a surfactant, such as bismuth, during quantum dot growth. Here, we present a series of indium arsenide quantum dot layers grown using several bismuth fluxes and two different growth temperatures. The effects of bismuth flux on quantum dot morphology and optical properties are studied by atomic force microscopy and photoluminescence measurements. Bimodal distributions of quantum dots are seen at low growth temperature, while at high temperature, a single dominant distribution is seen in most of the layers. A medium bismuth flux was seen to produce the highest integrated photoluminescence intensity at high growth temperature, whereas intensity saturates between medium and high fluxes at low growth temperatures. A significant increase in uncorrected aspect ratio seen for the layer grown with a low bismuth flux at high growth temperature presents a new opportunity for control of quantum dot morphology using bismuth.

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Tuning the optical properties of InAs QDs by means of digitally-alloyed GaAsSb strain reducing layers

Cited by 11 publications

References 30 publications

Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications

Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications

Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers

Growth of InAs(Bi)/GaAs Quantum Dots under a Bismuth Surfactant at High and Low Temperature

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