Tuning the Optical Anisotropy in Gradient Porous Germanium on Si Substrate

Abstract

Porous semiconductors have garnered significant attention owing to their distinctive physical and chemical properties. In this study, optical anisotropy is presented in porous germanium (PGe) on a Si (001) substrate. Both n‐ and p‐type PGe, achieved through bipolar electrochemical etching, exhibit optical anisotropy along the Ge <001> direction, as determined by spectroscopic ellipsometry. Birefringence and depolarization factors are controllable by adjusting the etching parameters and doping concentration of the epitaxial Ge layer. The gradient porosity and pore distribution in PGe can be well captured by the optical models. The findings of optical anisotropy in PGe‐on‐Si hold promise for applications in optical elements or sensors for gas or biomolecules.